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Author Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. pdf  doi
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  Title Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE Type A1 Journal article
  Year (down) 1999 Publication Physica: B : condensed matter T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA Abbreviated Journal Physica B  
  Volume 273-4 Issue Pages 140-143  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000084452200031 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.386; 1999 IF: 0.725  
  Call Number UA @ lucian @ c:irua:102892 Serial 2925  
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