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Author  |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
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Bafekry, A.; Akgenc, B.; Ghergherehchi, M.; Peeters, F.M. |
Strain and electric field tuning of semi-metallic character WCrCO₂ MXenes with dual narrow band gap |
2020 |
Journal Of Physics-Condensed Matter |
32 |
37 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Hieu, N.N.; Ghergherehchi, M.; Feghhi, S.A.H.; Gogova, D. |
Prediction of two-dimensional bismuth-based chalcogenides Bi₂X₃(X = S, Se, Te) monolayers with orthorhombic structure : a first-principles study |
2021 |
Journal Of Physics D-Applied Physics |
54 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Ghergherehchi, M.; Sarsari, I.A.; Ziabari, A.A. |
Novel two-dimensional AlSb and InSb monolayers with a double-layer honeycomb structure : a first-principles study |
2021 |
Physical Chemistry Chemical Physics |
23 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Fadlallah, M.M.; Khatibani, A.B.; Ziabari, A. abdolahzadeh; Ghergherehchi, M.; Nedaei, S.; Shayesteh, S.F.; Gogova, D. |
Tunable electronic and magnetic properties of MoSi₂N₄ monolayer via vacancy defects, atomic adsorption and atomic doping |
2021 |
Applied Surface Science |
559 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Fadlallah, M.M.; Mortazavi, B.; Ziabari, A.A.; Khatibani, A.B.; Nguyen, C., V; Ghergherehchi, M.; Gogova, D. |
Point defects in a two-dimensional ZnSnN₂ nanosheet : a first-principles study on the electronic and magnetic properties |
2021 |
Journal Of Physical Chemistry C |
125 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Fadlallah, M.M.; Ziabari, A.A.; Khatibani, A.B.; Feghhi, S.A.H.; Ghergherehchi, M.; Gogova, D. |
Adsorption of habitat and industry-relevant molecules on the MoSi₂N₄ monolayer |
2021 |
Applied Surface Science |
564 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Hoat, D.M.; Shahrokhi, M.; Fadlallah, M.M.; Shojaei, F.; Feghhi, S.A.H.; Ghergherehchi, M.; Gogova, D. |
MoSi₂N₄ single-layer : a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties |
2021 |
Journal Of Physics D-Applied Physics |
54 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Faraji, M.; Ziabari, A.A.; Fadlallah, M.M.; Nguyen, C., V; Ghergherehchi, M.; Feghhi, S.A.H. |
A van der Waals heterostructure of MoS₂/MoSi₂N₄ : a first-principles study |
2021 |
New Journal Of Chemistry |
45 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Ghergherehchi, M.; Shayesteh, S.F. |
Tuning the electronic and magnetic properties of antimonene nanosheets via point defects and external fields: first-principles calculations |
2019 |
Physical chemistry, chemical physics |
21 |
17 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Ghergherehchi, M.; Shayesteh, S.F.; Peeters, F.M. |
Adsorption of molecules on C3N nanosheet : a first-principles calculations |
2019 |
Chemical physics |
526 |
46 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Gogova, D.; M. Fadlallah, M.; V. Chuong, N.; Ghergherehchi, M.; Faraji, M.; Feghhi, S.A.H.; Oskoeian, M. |
Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials |
2021 |
Physical Chemistry Chemical Physics |
23 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Karbasizadeh, S.; Stampfl, C.; Faraji, M.; Hoat, D.M.; Sarsari, I.A.; Feghhi, S.A.H.; Ghergherehchi, M. |
Two-dimensional Janus semiconductor BiTeCl and BiTeBr monolayers : a first-principles study on their tunable electronic properties via an electric field and mechanical strain |
2021 |
Physical Chemistry Chemical Physics |
23 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Mortazavi, B.; Faraji, M.; Shahrokhi, M.; Shafique, A.; Jappor, H.R.; Nguyen, C.; Ghergherehchi, M.; Feghhi, S.A.H. |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb₂X₃ (X= S, Se, Te) monolayers with orthorhombic structure |
2021 |
Scientific Reports |
11 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Nguyen, C., V; Goudarzi, A.; Ghergherehchi, M.; Shafieirad, M. |
Investigation of strain and doping on the electronic properties of single layers of C₆N₆ and C₆N₈: a first principles study |
2020 |
Rsc Advances |
10 |
11 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Nguyen, C.; Obeid, M.M.; Ghergherehchi, M. |
Modulating the electro-optical properties of doped C₃N monolayers and graphene bilayersviamechanical strain and pressure |
2020 |
New Journal Of Chemistry |
44 |
7 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Obeid, M.; Nguyen, C.; Bagheri Tagani, M.; Ghergherehchi, M. |
Graphene hetero-multilayer on layered platinum mineral Jacutingaite (Pt₂HgSe₃): Van der Waals heterostructures with novel optoelectronic and thermoelectric performances |
2020 |
Journal Of Materials Chemistry A |
8 |
20 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. |
Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures |
2021 |
Applied Physics Letters |
118 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Shahrokhi, M.; Shafique, A.; Jappor, H.R.; Fadlallah, M.M.; Stampfl, C.; Ghergherehchi, M.; Mushtaq, M.; Feghhi, S.A.H.; Gogova, D. |
Semiconducting chalcogenide alloys based on the (Ge, Sn, Pb) (S, Se, Te) formula with outstanding properties : a first-principles calculation study |
2021 |
ACS Omega |
6 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Shahrokhi, M.; Shafique, A.; Jappor, H.R.; Shojaei, F.; Feghhi, S.A.H.; Ghergherehchi, M.; Gogova, D. |
Two-dimensional carbon nitride C₆N nanosheet with egg-comb-like structure and electronic properties of a semimetal |
2021 |
Nanotechnology |
32 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Shahrokhi, M.; Yagmurcukardes, M.; Gogova, D.; Ghergherehchi, M.; Akgenc, B.; Feghhi, S.A.H. |
Surface functionalization of the honeycomb structure of zinc antimonide (ZnSb) monolayer : a first-principles study |
2021 |
Surface Science |
707 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Shayesteh, S.F.; Ghergherehchi, M.; Peeters, F.M. |
Tuning the bandgap and introducing magnetism into monolayer BC3 by strain/defect engineering and adatom/molecule adsorption |
2019 |
Journal of applied physics |
126 |
48 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Shojaei, F.; Obeid, M.M.; Ghergherehchi, M.; Nguyen, C.; Oskouian, M. |
Two-dimensional silicon bismotide (SiBi) monolayer with a honeycomb-like lattice: first-principles study of tuning the electronic properties |
2020 |
Rsc Advances |
10 |
8 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Shojai, F.; Hoat, D.M.; Shahrokhi, M.; Ghergherehchi, M.; Nguyen, C. |
The mechanical, electronic, optical and thermoelectric properties of two-dimensional honeycomb-like of XSb (X = Si, Ge, Sn) monolayers: a first-principles calculations |
2020 |
Rsc Advances |
10 |
2 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M. |
Control of C3N4 and C4N3 carbon nitride nanosheets' electronic and magnetic properties through embedded atoms |
2020 |
Physical Chemistry Chemical Physics |
22 |
18 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Akgenc, B.; Mortazavi, B.; Ghergherehchi, M.; Nguyen, C.V. |
Embedding of atoms into the nanopore sites of the C₆N₆ and C₆N₈ porous carbon nitride monolayers with tunable electronic properties |
2020 |
Physical Chemistry Chemical Physics |
22 |
17 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. |
A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties |
2021 |
Applied Physics Letters |
118 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Ghergherehchi, M. |
Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC3, /C3N and / C3N4 van der Waals heterostructures |
2020 |
Nanotechnology (Bristol. Print) |
|
19 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Ghergherehchi, M.; Shayesteh, S.F. |
A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet |
2020 |
Carbon |
157 |
49 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Naseri, M.; Fadlallah, M.M.; Faraji, M.; Ghergherehchi, M.; Gogova, D.; Feghhi, S.A.H. |
Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer : a first-principles calculation |
2021 |
Journal Of Applied Physics |
129 |
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UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Van Nguyen, C.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M. |
Oxygen vacancies in the single layer of Ti₂CO₂ MXene: effects of gating voltage, mechanical strain, and atomic impurities |
2020 |
Physica Status Solidi B-Basic Solid State Physics |
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UA library record; WoS full record; WoS citing articles |
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