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	|  | Author | Bafekry, A.; Nguyen, C.; Obeid, M.M.; Ghergherehchi, M. |    
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	|  | Title | Modulating the electro-optical properties of doped C₃N monolayers and graphene bilayersviamechanical strain and pressure | Type | A1 Journal article | 
	|  | Year  | 2020 | Publication | New Journal Of Chemistry | Abbreviated Journal | New J Chem |  | 
	|  | Volume | 44 | Issue | 36 | Pages | 15785-15792 |  | 
	|  | Keywords | A1 Journal article; Condensed Matter Theory (CMT) |  | 
	|  | Abstract | In this work, we investigated systematically the electronic and optical properties of B doped C3N monolayers as well as B and N doped graphene bilayers (BN-Gr@2L). We found that the doping of B atoms leads to an enlarged band gap of the C3N monolayer and when the dopant concentration reaches 12.5%, an indirect-to-direct band gap switching occurs. In addition, with co-doping of B and N atoms on the graphene monolayer in the hexagonal configuration, an electronic transition from semi-metal to semiconductor occurs. Our optical results for B-C3N show a broad absorption spectrum in a wide visible range starting from 400 nm to 1000 nm with strong absorption intensity, making it a suitable candidate for nanoelectronic and optoelectronic applications. Interestingly, a transition from semi-metal to semiconductor emerges in the graphene monolayer with doping of B and N atoms. Furthermore, our results demonstrate that the in-plane strain and out-of-plane strain (pressure) can modulate the band gap of the BN-Gr@2L. The controllable electronic properties and optical features of the doped graphene bilayer by strain engineering may facilitate their practical performance for various applications in future. |  | 
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	|  | Language |  | Wos | 000571972400054 | Publication Date | 2020-08-18 |  | 
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	|  | ISSN | 1144-0546 | ISBN |  | Additional Links | UA library record; WoS full record; WoS citing articles |  | 
	|  | Impact Factor | 3.3 | Times cited | 7 | Open Access |  |  | 
	|  | Notes | ;  This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (NRF-2017R1A2B2011989).  ; | Approved | Most recent IF: 3.3; 2020 IF: 3.269 |  | 
	|  | Call Number | UA @ admin @ c:irua:171936 | Serial | 6561 |  | 
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