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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Morphology and defects in shallow trench isolation structures |
1999 |
Conference series of the Institute of Physics |
164 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
|
|
|
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
|
|
|
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
1997 |
Conference series of the Institute of Physics |
157 |
1 |
UA library record; WoS full record; WoS citing articles |
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