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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of β-SiC at 9500C and structural characterization |
1996 |
Nuclear instruments and methods in physics research |
B112 |
|
UA library record |
|
