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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Bafekry, A.; Karbasizadeh, S.; Stampfl, C.; Faraji, M.; Hoat, D.M.; Sarsari, I.A.; Feghhi, S.A.H.; Ghergherehchi, M. |
Two-dimensional Janus semiconductor BiTeCl and BiTeBr monolayers : a first-principles study on their tunable electronic properties via an electric field and mechanical strain |
2021 |
Physical Chemistry Chemical Physics |
23 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. |
A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Naseri, M.; Fadlallah, M.M.; Faraji, M.; Ghergherehchi, M.; Gogova, D.; Feghhi, S.A.H. |
Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer : a first-principles calculation |
2021 |
Journal Of Applied Physics |
129 |
|
UA library record; WoS full record; WoS citing articles |
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|
Bafekry, A.; Shahrokhi, M.; Shafique, A.; Jappor, H.R.; Fadlallah, M.M.; Stampfl, C.; Ghergherehchi, M.; Mushtaq, M.; Feghhi, S.A.H.; Gogova, D. |
Semiconducting chalcogenide alloys based on the (Ge, Sn, Pb) (S, Se, Te) formula with outstanding properties : a first-principles calculation study |
2021 |
ACS Omega |
6 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Van Nguyen, C.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M. |
Oxygen vacancies in the single layer of Ti₂CO₂ MXene: effects of gating voltage, mechanical strain, and atomic impurities |
2020 |
Physica Status Solidi B-Basic Solid State Physics |
|
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UA library record; WoS full record; WoS citing articles |
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Obeid, M.M.; Stampfl, C.; Bafekry, A.; Guan, Z.; Jappor, H.R.; Nguyen, C., V; Naseri, M.; Hoat, D.M.; Hieu, N.N.; Krauklis, A.E.; Tuan V Vu; Gogova, D. |
First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate |
2020 |
Physical Chemistry Chemical Physics |
22 |
18 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Peeters, F.M. |
The electronic, optical, and thermoelectric properties of monolayer PbTe and the tunability of the electronic structure by external fields and defects |
2020 |
Physica Status Solidi B-Basic Solid State Physics |
|
40 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Ghergherehchi, M. |
Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC3, /C3N and / C3N4 van der Waals heterostructures |
2020 |
Nanotechnology (Bristol. Print) |
|
19 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Akgenc, B.; Mortazavi, B.; Ghergherehchi, M.; Nguyen, C.V. |
Embedding of atoms into the nanopore sites of the C₆N₆ and C₆N₈ porous carbon nitride monolayers with tunable electronic properties |
2020 |
Physical Chemistry Chemical Physics |
22 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Peeters, F.M. |
Dirac half-metallicity of thin PdCl₃ nanosheets : investigation of the effects of external fields, surface adsorption and defect engineering on the electronic and magnetic properties |
2020 |
Scientific Reports |
10 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M. |
Control of C3N4 and C4N3 carbon nitride nanosheets' electronic and magnetic properties through embedded atoms |
2020 |
Physical Chemistry Chemical Physics |
22 |
18 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Shayesteh, S.F. |
A first-principles study of C3N nanostructures : control and engineering of the electronic and magnetic properties of nanosheets, tubes and ribbons |
2020 |
Chemphyschem |
21 |
27 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Ghergherehchi, M.; Shayesteh, S.F. |
A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet |
2020 |
Carbon |
157 |
49 |
UA library record; WoS full record; WoS citing articles |
|
|
Bafekry, A.; Stampfl, C.; Shayesteh, S.F.; Peeters, F.M. |
Exploiting the novel electronic and magnetic structure of C3Nvia functionalization and conformation |
2019 |
Advanced Electronic Materials |
5 |
39 |
UA library record; WoS full record; WoS citing articles |
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