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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. |
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN |
2005 |
Applied physics letters |
87 |
57 |
UA library record; WoS full record; WoS citing articles |
|
|
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van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
2005 |
Springer proceedings in physics |
107 |
|
UA library record; WoS full record; |
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Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
2004 |
Materials Research Society symposium proceedings |
798 |
|
UA library record |
|
