| |
Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. |
Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering |
2012 |
Physica Status Solidi A-Applications And Materials Science |
209 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. |
The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography |
2011 |
Semiconductor science and technology |
26 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Béché, A.; Rouvière, J.L.; Barnes, J.P.; Cooper, D. |
Dark field electron holography for strain measurement |
2011 |
Ultramicroscopy |
111 |
31 |
UA library record; WoS full record; WoS citing articles |
|
