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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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van Daele, B.; Van Tendeloo, G.; Jacobs, K.; Moerman, I.; Leys, M. |
Formation of metallic In in InGaN/GaN multiquantum wells |
2004 |
Applied physics letters |
85 |
32 |
UA library record; WoS full record; WoS citing articles |
|
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Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G. |
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures |
2003 |
Journal of crystal growth |
248 |
14 |
UA library record; WoS full record; WoS citing articles |
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van Daele, B.; Van Tendeloo, G.; Germain, M.; Leys, M.; Bougrioua, Z.; Moerman, I. |
Relation between microstructure and 2DEG properties of AlGaN/GaN structures |
2002 |
Physica status solidi: B: basic research |
234 |
1 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
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Bougrioua, Z.; Farvacque, J.-L.; Moerman, I.; Demeester, P.; Harris, J.J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Trush, E.J. |
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica status solidi: B: basic research |
216 |
13 |
UA library record; WoS full record; WoS citing articles |
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Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
273-4 |
5 |
UA library record; WoS full record; WoS citing articles |
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