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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study 2017 Physical review applied 8 6 UA library record; WoS full record; WoS citing articles url doi
Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study 2017 Journal of applied physics 121 UA library record; WoS full record; WoS citing articles url doi
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