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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
Do, M.T.; Gauquelin, N.; Nguyen, M.D.; Blom, F.; Verbeeck, J.; Koster, G.; Houwman, E.P.; Rijnders, G. |
Interface degradation and field screening mechanism behind bipolar-cycling fatigue in ferroelectric capacitors |
2021 |
Apl Materials |
9 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
Do, M.T.; Gauquelin, N.; Nguyen, M.D.; Wang, J.; Verbeeck, J.; Blom, F.; Koster, G.; Houwman, E.P.; Rijnders, G. |
Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors |
2020 |
Scientific Reports |
10 |
18 |
UA library record; WoS full record; WoS citing articles |
|
|
Li, L.; Liao, Z.; Gauquelin, N.; Minh Duc Nguyen; Hueting, R.J.E.; Gravesteijn, D.J.; Lobato, I.; Houwman, E.P.; Lazar, S.; Verbeeck, J.; Koster, G.; Rijnders, G. |
Epitaxial stress-free growth of high crystallinity ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) substrate |
2018 |
Advanced Materials Interfaces |
5 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
Liao, Z; , Green, R.J; Gauquelin, N; Macke, S.; Li, L.; Gonnissen, J; Sutarto, R.; Houwman, E.P.; Zhong, Z.; Van Aert, S.; Verbeeck, J.; Sawatzky, G.A.; Huijben, M.; Koster, G.; Rijnders, G. |
Long-Range Domain Structure and Symmetry Engineering by Interfacial Oxygen Octahedral Coupling at Heterostructure Interface |
2016 |
Advanced functional materials |
26 |
23 |
UA library record; WoS full record; WoS citing articles |
|
|
Boschker, H.; Verbeeck, J.; Egoavil, R.; Bals, S.; Van Tendeloo, G.; Huijben, M.; Houwman, E.P.; Koster, G.; Blank, D.H.A.; Rijnders, G. |
Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces |
2012 |
Advanced functional materials |
22 |
72 |
UA library record; WoS full record; WoS citing articles |
|
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Boschker, H.; Huijben, M.; Vailinois, A.; Verbeeck, J.; Van Aert, S.; Luysberg, M.; Bals, S.; Van Tendeloo, G.; Houwman, E.P.; Koster, G.; Blank, D.H.A.; Rijnders, G. |
Optimized fabrication of high-quality La0.67Sr0.33MnO3 thin films considering all essential characteristics |
2011 |
Journal of physics: D: applied physics |
44 |
99 |
UA library record; WoS full record; WoS citing articles |
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