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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE 1999 Physica: B : condensed matter T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA 273-4 5 UA library record; WoS full record; WoS citing articles pdf doi
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