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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Korneychuk, S.; Partoens, B.; Guzzinati, G.; Ramaneti, R.; Derluyn, J.; Haenen, K.; Verbeeck, J. |
Exploring possibilities of band gap measurement with off-axis EELS in TEM |
2018 |
Ultramicroscopy |
189 |
7 |
UA library record; WoS full record; WoS citing articles |
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Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M. |
Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs |
2017 |
Applied physics letters |
111 |
78 |
UA library record; WoS full record; WoS citing articles |
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Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
2006 |
Journal of electronic materials |
35 |
102 |
UA library record; WoS full record; WoS citing articles |
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Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; |
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors |
2006 |
Applied physics letters |
89 |
15 |
UA library record; WoS full record; WoS citing articles |
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van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. |
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN |
2005 |
Applied physics letters |
87 |
57 |
UA library record; WoS full record; WoS citing articles |
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van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
2005 |
Springer proceedings in physics |
107 |
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UA library record; WoS full record; |
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