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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Yu, H.; Schaekers, M.; Chew, S.A.; Eyeraert, J.-L.; Dabral, A.; Pourtois, G.; Horiguchi, N.; Mocuta, D.; Collaert, N.; De Meyer, K. |
Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology |
2018 |
2018 18th International Workshop On Junction Technology (iwjt) |
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UA library record; WoS full record |
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Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
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Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. |
Perspective of tunnel-FET for future low-power technology nodes |
2014 |
2014 Ieee International Electron Devices Meeting (iedm) |
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UA library record; WoS full record |
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. |
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets |
2012 |
IEEE transactions on electron devices |
59 |
72 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
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Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. |
Temperature-dependent modeling and characterization of through-silicon via capacitance |
2011 |
IEEE electron device letters |
32 |
27 |
UA library record; WoS full record; WoS citing articles |
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Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
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Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Tunneling-lifetime model for metal-oxide-semiconductor structures |
2009 |
Physical review : B : solid state |
80 |
2 |
UA library record; WoS full record; WoS citing articles |
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Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M. |
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors |
2008 |
Journal of computational electronics |
7 |
3 |
UA library record; WoS full record; WoS citing articles |
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Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
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Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; |
A new method to calculate leakage current and its applications for sub-45nm MOSFETs |
2005 |
Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France |
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UA library record; WoS full record |
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Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. |
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility |
2005 |
Microelectronic engineering |
80 |
1 |
UA library record; WoS full record; WoS citing articles |
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van Rossum, M.; Schoenmaker, W.; Magnus, W.; de Meyer, K.; Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T. |
Moore's law: new playground for quantum physics |
2003 |
Physica status solidi: B: basic research |
237 |
2 |
UA library record; WoS full record; WoS citing articles |
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Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. |
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures |
1999 |
Journal Of Applied Physics |
85 |
16 |
UA library record; WoS full record; WoS citing articles |
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