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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Cooper, D.; Denneulin, T.; Bernier, N.; Béché, A.; Rouvière, J.-L. |
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope |
2016 |
Micron |
80 |
50 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
2013 |
Applied physics letters |
103 |
53 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. |
Towards rapid nanoscale measurement of strain in III-nitride heterostructures |
2013 |
Applied Physics Letters |
103 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Béché, A.; Rouviere, J.L.; Barnes, J.P.; Cooper, D. |
Strain measurement at the nanoscale : comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography |
2013 |
Ultramicroscopy |
131 |
73 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
2012 |
Applied Physics Letters |
112 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy |
2012 |
Applied Physics Letters |
100 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R. |
Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography |
2011 |
Applied physics letters |
99 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. |
The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography |
2011 |
Semiconductor science and technology |
26 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Cooper, D.; de la Peña, F.; Béché, A.; Rouvière, J.-L.; Servanton, G.; Pantel, R.; Morin, P. |
Field mapping with nanometer-scale resolution for the next generation of electronic devices |
2011 |
Nano letters |
11 |
12 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Béché, A.; Rouvière, J.L.; Barnes, J.P.; Cooper, D. |
Dark field electron holography for strain measurement |
2011 |
Ultramicroscopy |
111 |
31 |
UA library record; WoS full record; WoS citing articles |
|
