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Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers 2004 Materials Research Society symposium proceedings 798 UA library record
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