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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
van Daele, B.; Van Tendeloo, G.; Germain, M.; Leys, M.; Bougrioua, Z.; Moerman, I. |
Relation between microstructure and 2DEG properties of AlGaN/GaN structures |
2002 |
Physica status solidi: B: basic research |
234 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bougrioua, Z.; Farvacque, J.-L.; Moerman, I.; Demeester, P.; Harris, J.J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Trush, E.J. |
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica status solidi: B: basic research |
216 |
13 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
273-4 |
5 |
UA library record; WoS full record; WoS citing articles |
|
