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	Author	Title	Year	Publication	Volume	Times cited	Additional Links	Links
	Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M.	Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study	2016	Applied physics letters	108	4	UA library record; WoS full record; WoS citing articles
	Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W.	Comparison of short-channel effects in monolayer MoS₂ based junctionless and inversion-mode field-effect transistors	2016	Applied physics letters	108	13	UA library record; WoS full record; WoS citing articles

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