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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Jiang, J.; Milošević, M.V.; Wang, Y.-L.; Xiao, Z.-L.; Peeters, F.M.; Chen, Q.-H. |
Field-free superconducting diode in a magnetically nanostructured superconductor |
2022 |
Physical review applied |
18 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sethu, K.K.V.; Ghosh, S.; Couet, S.; Swerts, J.; Sorée, B.; De Boeck, J.; Kar, G.S.; Garello, K. |
Optimization of tungsten beta-phase window for spin-orbit-torque magnetic random-access memory |
2021 |
Physical Review Applied |
16 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Tao, Z.H.; Dong, H.M.; Milošević, M.V.; Peeters, F.M.; Van Duppen, B. |
Tailoring dirac plasmons via anisotropic dielectric environment by design |
2021 |
Physical Review Applied |
16 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Yin, L.; Juneja, R.; Lindsay, L.; Pandey, T.; Parker, D.S. |
Semihard iron-based permanent-magnet materials |
2021 |
Physical Review Applied |
15 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Torsello, D.; Ummarino, G.A.; Bekaert, J.; Gozzelino, L.; Gerbaldo, R.; Tanatar, M.A.; Canfield, P.C.; Prozorov, R.; Ghigo, G. |
Tuning the intrinsic anisotropy with disorder in the CaKFE₄As₄ superconductor |
2020 |
Physical Review Applied |
13 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Karaaslan, Y.; Yapicioglu, H.; Sevik, C. |
Assessment of Thermal Transport Properties of Group-III Nitrides: A Classical Molecular Dynamics Study with Transferable Tersoff-Type Interatomic Potentials |
2020 |
Physical Review Applied |
13 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide |
2018 |
Physical review applied |
9 |
7 |
UA library record; WoS full record; WoS citing articles |
|
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Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. |
Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study |
2017 |
Physical review applied |
8 |
6 |
UA library record; WoS full record; WoS citing articles |
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