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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Griffin, E.; Mogg, L.; Hao, G.-P.; Kalon, G.; Bacaksiz, C.; Lopez-Polin, G.; Zhou, T.Y.; Guarochico, V.; Cai, J.; Neumann, C.; Winter, A.; Mohn, M.; Lee, J.H.; Lin, J.; Kaiser, U.; Grigorieva, I., V; Suenaga, K.; Ozyilmaz, B.; Cheng, H.-M.; Ren, W.; Turchanin, A.; Peeters, F.M.; Geim, A.K.; Lozada-Hidalgo, M. Proton and Li-Ion permeation through graphene with eight-atom-ring defects 2020 Acs Nano 14 53 UA library record; WoS full record; WoS citing articles pdf url doi
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN 2005 Applied physics letters 87 57 UA library record; WoS full record; WoS citing articles pdf doi
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN 2005 Springer proceedings in physics 107 UA library record; WoS full record;
Bogaerts, A.; Verscharen, W.; Steers, E. Computer simulations of crater profiles in glow discharge optical emission spectrometry: comparison with experiments and investigation of the underlying mechanisms 2004 Spectrochimica acta: part B : atomic spectroscopy 59 14 UA library record; WoS full record; WoS citing articles doi
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers 2004 Materials Research Society symposium proceedings 798 UA library record
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