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“Computational study of plasma sustainability in radio frequency micro-discharges”. Zhang Y, Jiang W, Zhang QZ, Bogaerts A, Journal of applied physics 115, 193301 (2014). http://doi.org/10.1063/1.4878161
Abstract: We apply an implicit particle-in-cell Monte-Carlo (PIC-MC) method to study a radio-frequency argon microdischarge at steady state in the glow discharge limit, in which the microdischarge is sustained by secondary electron emission from the electrodes. The plasma density, electron energy distribution function (EEDF), and electron temperature are calculated in a wide range of operating conditions, including driving voltage, microdischarge gap, and pressure. Also, the effect of gap size scaling (in the range of 50-1000 μm) on the plasma sustaining voltage and peak electron density at atmospheric pressure is examined, which has not been explored before. In our simulations, three different EEDFs, i.e., a so-called three temperature hybrid mode, a two temperature α mode, and a two temperature γ mode distribution, are identified at different gaps and voltages. The maximum sustaining voltage to avoid a transition from the glow mode to an arc is predicted, as well as the minimum sustaining voltage for a steady glow discharge. Our calculations elucidate that secondary electrons play an essential role in sustaining the discharge, and as a result the relationship between breakdown voltage and gap spacing is far away from the Paschen law at atmospheric pressure.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 11
DOI: 10.1063/1.4878161
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“Computer modelling of magnetron discharges”. Bogaerts A, Bultinck E, Kolev I, Schwaederlé, L, van Aeken K, Buyle G, Depla D, Journal of physics: D: applied physics 42, 194018 (2009). http://doi.org/10.1088/0022-3727/42/19/194018
Abstract: In this paper, some modelling approaches to describe direct current (dc) magnetron discharges developed in our research groups will be presented, including an analytical model, Monte Carlo simulations for the electrons and for the sputtered atoms, a hybrid Monte Carlo-fluid model and particle-in-cell-Monte Carlo collision simulations. The strengths and limitations of the various modelling approaches will be explained, and some characteristic simulation results will be illustrated. Furthermore, some other simulation methods related to the magnetron device will be briefly explained, more specifically for calculating the magnetic field distribution inside the discharge, and for describing the (reactive) sputtering.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 32
DOI: 10.1088/0022-3727/42/19/194018
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“Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference”. Compemolle S, Pourtois G, Sorée B, Magnus W, Chibotaru LF, Ceulemans A, Physical review : B : condensed matter and materials physics 77, 193406 (2008). http://doi.org/10.1103/PhysRevB.77.193406
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.77.193406
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“Control of the persistent currents in two interacting quantum rings through the Coulomb interaction and interring tunneling”. Castelano LK, Hai G-Q, Partoens B, Peeters FM, Physical review : B : solid state 78, 195315 (2008). http://doi.org/10.1103/PhysRevB.78.195315
Abstract: The persistent current in two vertically coupled quantum rings containing few electrons is studied. We find that the Coulomb interaction between the rings in the absence of tunneling affects the persistent current in each ring and the ground-state configurations. Quantum tunneling between the rings alters significantly the ground state and the persistent current in the system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.78.195315
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“The crystal structure of \alpha-K3AIF6: elpasolites and double perovskites with broken corner-sharing connectivity of the octahedral framework”. Abakumov AM, King G, Laurinavichute VK, Rozova MG, Woodward PM, Antipov EV, Inorganic chemistry 48, 9336 (2009). http://doi.org/10.1021/ic9013043
Abstract: The crystal structure of α-K3AlF6 was solved and refined from a combination of powder X-ray and neutron diffraction data (a = 18.8385(3)Å, c = 33.9644(6)Å, S.G. I41/a, Z = 80, RP(X-ray) = 0.037, RP(neutron) = 0.053). The crystal structure is of the A2BB′X6 elpasolite type with the a = b ≈ ae√5, c = 4ae superstructure (ae, parameter of the elpasolite subcell) and rock-salt-type ordering of the K and Al cations over the B and B′ positions, respectively. The remarkable feature of α-K3AlF6 is a rotation of 2/5 of the AlF6 octahedra by π/4 around one of the crystal axes of the elpasolite subcell, coinciding with the 4-fold symmetry axes of the AlF6 octahedra. The rotation of the AlF6 octahedra replaces the corner-sharing between the K and Al polyhedra by edge-sharing, resulting in an increase of coordination numbers of the K cations at the B positions up to 7 and 8. Due to significant deformations of the K polyhedra, the corner-sharing connectivity of the octahedral elpasolite framework is broken and the rotations of the AlF6 octahedra do not have a cooperative character. Elpasolites and double perovskites with similar structural organization are discussed. The difference in ionic radii of the B and B′ cations as well as the tolerance factor are proposed to be the parameters governing the formation of elpasolites and double perovskites with broken corner-sharing connectivity of the octahedral framework.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.857
Times cited: 20
DOI: 10.1021/ic9013043
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“Dynamics of kinematic vortices in a mesoscopic superconducting loop”. Berdiyorov GR, Milošević, MV, Peeters FM, Physica: C : superconductivity 470, 946 (2010). http://doi.org/10.1016/j.physc.2010.02.028
Abstract: Using the time-dependent GinzburgLandau formalism, we study the dynamic properties of a submicron superconducting loop in applied current and in presence of a perpendicular magnetic field. The resistive state of the sample is caused by the motion of kinematic vortexantivortex pairs. Vortices and antivortices move in opposite directions to each other, perpendicularly to the applied drive, and the periodic creation and annihilation of such pairs results in periodic oscillations of the voltage across the sample. The dynamics of these kinematic pairs is strongly influenced by the applied magnetic field, which for high fields leads to the flow of just vortices. Kinematic vortices can be temporarily pinned inside the loop with observable trace in the voltage vs. time characteristics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.404
Times cited: 9
DOI: 10.1016/j.physc.2010.02.028
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“Effect of nonhomogenous dielectric background on the plasmon modes in graphene double-layer structures at finite temperatures”. Badalyan SM, Peeters FM, Physical review : B : condensed matter and materials physics 85, 195444 (2012). http://doi.org/10.1103/PhysRevB.85.195444
Abstract: We have calculated the plasmon modes in graphene double layer structures at finite temperatures, taking into account the inhomogeneity of the dielectric background of the system. The effective dielectric function is obtained from the solution of the Poisson equation of a three-layer dielectric medium with graphene sheets located at the interfaces, separating the different materials. Due to the momentum dispersion of the effective dielectric function, the intra- and interlayer bare Coulomb interactions in the graphene double layer system acquires an additional momentum dependence-an effect that is of the order of the interlayer interaction itself. We show that the energies of the in-phase and out-of-phase plasmon modes are determined largely by different values of the spatially dependent effective dielectric function. The effect of the dielectric inhomogeneity increases with temperature, and even at high temperatures the energy shift induced by the dielectric inhomogeneity and temperature itself remains larger than the broadening of the plasmon energy dispersions due to the Landau damping. The obtained new features of the plasmon dispersions can be observed in frictional drag measurements and in inelastic light scattering and electron energy-loss spectroscopies.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 67
DOI: 10.1103/PhysRevB.85.195444
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“Electric-field control of the band gap and Fermi energy in graphene multilayers by top and back gates”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : solid state 80, 195401 (2009). http://doi.org/10.1103/PhysRevB.80.195401
Abstract: It is known that a perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum which is tunable by the gate voltage. Here we consider a system of graphene multilayers in the presence of a positively charged top and a negatively charged back gate to control independently the density of electrons on the graphene layers and the Fermi energy of the system. The band structure of three- and four-layer graphene systems in the presence of the top and back gates is obtained using a tight-binding approach. A self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We predict that for opposite and equal charges on the top and bottom layers an energy gap is opened at the Fermi level. For an even number of layers this gap is larger than in the case of an odd number of graphene layers. We find that the circular asymmetry of the spectrum, which is a consequence of the trigonal warping, changes the size of the induced electronic gap, even when the total density of the induced electrons on the graphene layers is low.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.80.195401
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“Electron energy and temperature relaxation in graphene on a piezoelectric substrate”. Zhang SH, Xu W, Peeters FM, Badalyan SM, Physical review : B : condensed matter and materials physics 89, 195409 (2014). http://doi.org/10.1103/PhysRevB.89.195409
Abstract: We study the energy and temperature relaxation of electrons in graphene on a piezoelectric substrate. Scattering from the combined potential of extrinsic piezoelectric surface acoustical (PA) phonons of the substrate and intrinsic deformation acoustical phonons of graphene is considered for a (non) degenerate gas of Dirac fermions. It is shown that in the regime of low energies or temperatures the PA phonons dominate the relaxation and change qualitatively its character. This prediction is relevant for quantum metrology and electronic applications using graphene devices and suggests an experimental setup for probing electron-phonon coupling in graphene.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.89.195409
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“Empirical evaluation of metal deposition for the analysis of organic compounds with static secondary ion mass spectrometry (S-SIMS)”. de Mondt R, Adriaensen L, Vangaever F, Lenaerts J, van Vaeck L, Gijbels R, Applied surface science 252, 6652 (2006). http://doi.org/10.1016/j.apsusc.2006.02.110
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.387
Times cited: 9
DOI: 10.1016/j.apsusc.2006.02.110
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“Energy-loss near-edge structure changes with bond length in carbon systems”. Titantah JT, Lamoen D, Physical review : B : condensed matter and materials physics 72, 193104 (2005). http://doi.org/10.1103/PhysRevB.72.193104
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 24
DOI: 10.1103/PhysRevB.72.193104
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“First-principles investigation of graphene fluoride and graphane”. Leenaerts O, Peelaers H, Hernández-Nieves AD, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 195436 (2010). http://doi.org/10.1103/PhysRevB.82.195436
Abstract: Different stoichiometric configurations of graphane and graphene fluoride are investigated within density-functional theory. Their structural and electronic properties are compared, and we indicate the similarities and differences among the various configurations. Large differences between graphane and graphene fluoride are found that are caused by the presence of charges on the fluorine atoms. A configuration that is more stable than the boat configuration is predicted for graphene fluoride. We also perform GW calculations for the electronic band gap of both graphene derivatives. These band gaps and also the calculated Youngs moduli are at variance with available experimental data. This might indicate that the experimental samples contain a large number of defects or are only partially covered with H or F.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 367
DOI: 10.1103/PhysRevB.82.195436
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“Formation of metallic In in InGaN/GaN multiquantum wells”. van Daele B, Van Tendeloo G, Jacobs K, Moerman I, Leys M, Applied physics letters 85, 4379 (2004). http://doi.org/10.1063/1.1815054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.1815054
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“Freezing vortex rivers”. Silhanek AV, Kramer RGB, van de Vondel J, Moshchalkov VV, Milošević, MV, Berdiyorov GR, Peeters FM, Luccas RF, Puig T, Physica: C : superconductivity 470, 726 (2010). http://doi.org/10.1016/j.physc.2010.02.072
Abstract: We demonstrate experimentally and theoretically that the dissipative state at high current densities of superconducting samples with a periodic array of holes consist of flux rivers resulting from a short range attractive interaction between vortices. This dynamically induced vortexvortex attraction results from the migration of quasiparticles out of the vortex core. We have directly visualized the formation of vortex chains by scanning Hall microscopy after freezing the dynamic state by a field cooling procedure at constant bias current. Similar experiments carried out in a sample without holes show no hint of flux river formation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.404
Times cited: 4
DOI: 10.1016/j.physc.2010.02.072
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“Graphene: a perfect nanoballoon”. Leenaerts O, Partoens B, Peeters FM, Applied physics letters 93, 193107 (2008). http://doi.org/10.1063/1.3021413
Abstract: We have performed a first-principles density functional theory investigation of the penetration of helium atoms through a graphene monolayer with defects. The relaxation of the graphene layer caused by the incoming helium atoms does not have a strong influence on the height of the energy barriers for penetration. For defective graphene layers, the penetration barriers decrease exponentially with the size of the defects but they are still sufficiently high that very large defects are needed to make the graphene sheet permeable for small atoms and molecules. This makes graphene a very promising material for the construction of nanocages and nanomembranes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 295
DOI: 10.1063/1.3021413
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“Graphene hall bar with an asymmetric pn-junction”. Milovanovic SP, Masir MR, Peeters FM, Journal of applied physics 113, 193701 (2013). http://doi.org/10.1063/1.4805350
Abstract: We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)].
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.4805350
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“Helical liquid of snake states”. Shakouri K, Badalyan SM, Peeters FM, Physical review : B : condensed matter and materials physics 88, 195404 (2013). http://doi.org/10.1103/PhysRevB.88.195404
Abstract: We derive an exact solution to the problem of spin snake states induced in a nonhomogeneous magnetic field by a combined action of the Rashba spin-orbit and Zeeman fields. The electron spin behavior as a function of the cyclotron orbit center position and an external homogeneous magnetic field was obtained. It is shown that in an antisymmetric magnetic field the electron spin in the snake states has only an in-plane projection, perpendicular to the magnetic interface, which vanishes at large positive momenta. Applying an external homogeneous magnetic field adds a finite out-of-plane spin component and simultaneously gaps out the spectral branches, which results in regular beating patterns of the spin current components.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.88.195404
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“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 481
DOI: 10.1063/1.125225
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“Impact of spin-orbit coupling on the Holstein polaron”. Li Z, Covaci L, Berciu M, Baillie D, Marsiglio F, Physical review : B : condensed matter and materials physics 83, 195104 (2011). http://doi.org/10.1103/PhysRevB.83.195104
Abstract: We utilize an exact variational numerical procedure to calculate the ground state properties of a polaron in the presence of a Rashba-like spin-orbit interaction. Our results corroborate previous work performed with the momentum average approximation and with weak-coupling perturbation theory. We find that spin-orbit coupling increases the effective mass in the regime with weak electron-phonon coupling, and decreases the effective mass in the regimes of intermediate and strong electron-phonon coupling. Analytical strong-coupling perturbation theory results confirm our numerical results in the small-polaron regime. A large amount of spin-orbit coupling can lead to a significant lowering of the polaron effective mass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.83.195104
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“Induced polarization and electronic properties of carbon-doped boron nitride nanoribbons”. Beheshtian J, Sadeghi A, Neek-Amal M, Michel KH, Peeters FM, Physical review : B : condensed matter and materials physics 86, 195433 (2012). http://doi.org/10.1103/PhysRevB.86.195433
Abstract: The electronic properties of boron nitride nanoribbons (BNNRs) doped with a line of carbon atoms are investigated using density functional calculations. By replacing a line of alternating B and N atoms with carbons, three different configurations are possible depending on the type of the atoms which bond to the carbons. We found very different electronic properties for these configurations: (i) the NCB arrangement is strongly polarized with a large dipole moment having an unexpected direction, (ii) the BCB and NCN arrangements are nonpolar with zero dipole moment, (iii) the doping by a carbon line reduces the band gap regardless of the local arrangement of the borons and the nitrogens around the carbon line, and (iv) the polarization and energy gap of the carbon-doped BNNRs can be tuned by an electric field applied parallel to the carbon line. Similar effects were found when either an armchair or zigzag line of carbon was introduced.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.86.195433
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“Influence of the microstructure on the high-temperature transport properties of GdBaCo2O5.5+\delta epitaxial films”. Burriel M, Casa-Cabanas M, Zapata J, Tan H, Verbeeck J, Solis C, Roqueta J, Skinner SJ, Kilner JA, Van Tendeloo G, Santiso J, Chemistry of materials 22, 5512 (2010). http://doi.org/10.1021/cm101423z
Abstract: Epitaxial thin films of GdBaCo2O5.5+δ (GBCO) grown by pulsed laser deposition have been studied as a function of deposition conditions. The variation in film structure, domain orientation, and microstructure upon deviations in the cation composition have been correlated with the charge transport properties of the films. The epitaxial GBCO films mainly consist of single- and double-perovskite regions that are oriented in different directions depending on the deposition temperature. Additionally, cobalt depletion induces the formation of a high density of stacking defects in the films, consisting of supplementary GdO planes along the c-axis of the material. The presence of such defects progressively reduces the electrical conductivity. The films closer to the stoichiometric composition have shown p-type electronic conductivity at high pO2 with values as high as 800 S/cm at 330 °C in 1 atm O2, and with a pO2 power dependence with an exponent as low as 1/25, consistent with the behavior reported for bulk GBCO. These values place GBCO thin films as a very promising material to be applied as cathodes in intermediate temperature solid oxide fuel cells.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 17
DOI: 10.1021/cm101423z
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“Landau levels in graphene bilayer quantum dots”. Pereira JM, Peeters FM, Vasilopoulos P, Costa Filho RN, Farias GA, Physical review : B : solid state 79, 195403 (2009). http://doi.org/10.1103/PhysRevB.79.195403
Abstract: We investigate localized electron and hole states in parabolic quantum dots of biased graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots can be created by means of nanostructured gates or by position-dependent doping, which can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical results show the energy levels of confined electrons and holes as a function of the dot parameters and the magnetic field. Remarkable crossings of energy levels are found.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 29
DOI: 10.1103/PhysRevB.79.195403
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“Lattice dynamics of a rotor-stator molecular crystal: Fullerene-cubane C60\centerdot C8H8”. Bousige C, Rols S, Cambedouzou J, Verberck B, Pekker S, Kováts É, Durkó, G, Jalsovsky I, Pellegrini É, Launois P, Physical review : B : condensed matter and materials physics 82, 195413 (2010). http://doi.org/10.1103/PhysRevB.82.195413
Abstract: The dynamics of fullerene-cubane (C60⋅C8H8) cocrystal is studied combining experimental [x-ray diffuse scattering, quasielastic and inelastic neutron scattering (INS)] and simulation (molecular dynamics) investigations. Neutron scattering gives direct evidence of the free rotation of fullerenes and of the libration of cubanes in the high-temperature phase, validating the rotor-stator description of this molecular system. X-ray diffuse scattering shows that orientational disorder survives the order/disorder transition in the low-temperature phase, although the loss of fullerene isotropic rotational diffusion is featured by the appearance of a 2.2 meV mode in the INS spectra. The coupling between INS and simulations allows identifying a degeneracy lift of the cubane librations in the low temperature phase, which is used as a tool for probing the environment of cubane in this phase and for getting further insights into the phase transition mechanism.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 16
DOI: 10.1103/PhysRevB.82.195413
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“Local boron environment in B-doped nanocrystalline diamond films”. Turner S, Lu Y-G, Janssens SD, da Pieve F, Lamoen D, Verbeeck J, Haenen K, Wagner P, Van Tendeloo G, Nanoscale 4, 5960 (2012). http://doi.org/10.1039/c2nr31530k
Abstract: Thin films of heavily B-doped nanocrystalline diamond (B:NCD) have been investigated by a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy performed on a state-of-the-art aberration corrected instrument to determine the B concentration, distribution and the local B environment. Concentrations of [similar]1 to 3 at.% of boron are found to be embedded within individual grains. Even though most NCD grains are surrounded by a thin amorphous shell, elemental mapping of the B and C signal shows no preferential embedding of B in these amorphous shells or in grain boundaries between the NCD grains, in contrast with earlier work on more macroscopic superconducting polycrystalline B-doped diamond films. Detailed inspection of the fine structure of the boron K-edge and comparison with density functional theory calculated fine structure energy-loss near-edge structure signatures confirms that the B atoms present in the diamond grains are substitutional atoms embedded tetrahedrally into the diamond lattice.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 39
DOI: 10.1039/c2nr31530k
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“Magnetization measurements and Ginzburg-Landau simulations of micron-size \beta-tin samples : evidence for an unusual critical behavior of mesoscopic type-I superconductors”. Müller A, Milošević, MV, Dale SEC, Engbarth MA, Bending SJ, Physical review letters 109, 197003 (2012). http://doi.org/10.1103/PhysRevLett.109.197003
Abstract: We describe investigations of the largely unexplored field of mesoscopic type-I superconductors. Micromagnetometry and 3D Ginzburg-Landau simulations of our single crystal β-tin samples in this regime reveal size- and temperature-dependent supercritical fields whose behavior is radically different from the bulk critical field HcB. We find that complete suppression of the intermediate state in medium-size samples can result in a surprising reduction of the critical field significantly below HcB. We also reveal an evolution of the superconducting-to-normal phase transition from the expected irreversible first order at low temperatures through the previously unobserved reversible first-order to a second-order transition close to Tc, where the critical field can be many times larger than HcB. Finally, we have identified striking correlations between the mesoscopic Hc3 for nucleation of surface superconductivity and the thermodynamic Hc near Tc. All these observations are entirely unexpected in the conventional type-I picture.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 21
DOI: 10.1103/PhysRevLett.109.197003
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“Microscopic theory of orientational disorder and the orientational phase transition in solid C60”. Michel KH, Copley JRD, Neumann DA, Physical review letters 68, 2929 (1992). http://doi.org/10.1103/PhysRevLett.68.2929
Abstract: We have developed a microscopic theory which describes the orientational dynamics of C60 molecules in the face-centered-cubic phase of C60 fullerite. The molecular interaction potential and the crystal-field potential are formulated in terms of symmetry-adapted rotator functions. The phase transition to the Pa3BAR structure is driven by an active multipolar mode of T2g symmetry belonging to the l = 10 manifold. The Birman criterion is satisfied. The transition is found to be of first order.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 7.512
Times cited: 94
DOI: 10.1103/PhysRevLett.68.2929
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“A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors”. Vandenberghe WG, Verhulst AS, Kao K-H, De Meyer K, Sorée B, Magnus W, Groeseneken G, Applied physics letters 100, 193509 (2012). http://doi.org/10.1063/1.4714544
Abstract: We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 25
DOI: 10.1063/1.4714544
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“Multiband tunneling in trilayer graphene”. Van Duppen B, Sena SHR, Peeters FM, Physical review : B : condensed matter and materials physics 87, 195439 (2013). http://doi.org/10.1103/PhysRevB.87.195439
Abstract: The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for p-n and p-n-p junctions as realized by using a single gate (SG) or a double gate (DG). For the rhombohedral form, due to the chirality of the electrons, the Klein paradox is found at normal incidence for SG devices, while at high-energy interband scattering between additional propagation modes can occur. The electrons in Bernal ABA TLG can have a monolayer- or bilayer-like character when incident on a SG device. Using a DG, however, both propagation modes will couple by breaking the mirror symmetry of the system, which induces intermode scattering and resonances that depend on the width of the DG p-n-p junction. For ABC TLG the DG opens up a band gap which suppresses Klein tunneling. The DG induces also an unexpected asymmetry in the tunneling angle for single-valley electrons.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.87.195439
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“New mechanism for oxidation of native silicon oxide”. Khalilov U, Pourtois G, Huygh S, van Duin ACT, Neyts EC, Bogaerts A, The journal of physical chemistry: C : nanomaterials and interfaces 117, 9819 (2013). http://doi.org/10.1021/jp400433u
Abstract: Continued miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFETs) requires an ever-decreasing thickness of the gate oxide. The structure of ultrathin silicon oxide films, however, critically depends on the oxidation mechanism. Using reactive atomistic simulations, we here demonstrate how the oxidation mechanism in hyperthermal oxidation of such structures may be controlled by the oxidation temperature and the oxidant energy. Specifically, we study the interaction of hyperthermal oxygen with energies of 15 eV with thin SiOx (x ≤ 2) films with a native oxide thickness of about 10 Å. We analyze the oxygen penetration depth probability and compare with results of the hyperthermal oxidation of a bare Si(100){2 × 1} (c-Si) surface. The temperature-dependent oxidation mechanisms are discussed in detail. Our results demonstrate that, at low (i.e., room) temperature, the penetrated oxygen mostly resides in the oxide region rather than at the SiOx|c-Si interface. However, at higher temperatures, starting at around 700 K, oxygen atoms are found to penetrate and to diffuse through the oxide layer followed by reaction at the c-Si boundary. We demonstrate that hyperthermal oxidation resembles thermal oxidation, which can be described by the DealGrove model at high temperatures. Furthermore, defect creation mechanisms that occur during the oxidation process are also analyzed. This study is useful for the fabrication of ultrathin silicon oxide gate oxides for metal-oxide-semiconductor devices as it links parameters that can be straightforwardly controlled in experiment (oxygen temperature, velocity) with the silicon oxide structure.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 24
DOI: 10.1021/jp400433u
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“Oxidation of the GaAs(001) surface : insights from first-principles calculations”. Scarrozza M, Pourtois G, Houssa M, Heyns M, Stesmans A, Physical review : B : condensed matter and materials physics 85, 195307 (2012). http://doi.org/10.1103/PhysRevB.85.195307
Abstract: We performed a detailed investigation of the oxidation of the technologically relevant GaAs(001)-beta 2(2x4) surface via density functional calculations. The purpose is to gain insights on the atomistic mechanisms and local bondings that underlie the degradation of the surface properties once exposed to oxygen. The study comprises the adsorption of single O atoms, through the sampling of several adsorption sites, and the subsequent formation of the O adsorbate at increasing coverage by taking into account multiple-atom adsorption. Based on the evaluation of the energetics and the structural properties of the atomistic models generated, the results here reported delineate a consistent picture of the initial stage of the surface oxidation: (i) at low coverage, in the limit of single O insertions, oxygen is incorporated on the surface forming a twofold-bridging Ga-O-As bond; (ii) at increasing coverage, as multiple O atoms are involved, this is accompanied by the formation of a threefold-coordinated bond (with two Ga and one As atoms); (iii) the latter has important implications regarding the electronic properties of the adsorbate since this O bonding may result in the formation of As dangling bonds. Moreover, a clear trend of increased energy gain for the incorporation of neighboring O atoms compared to single O insertions indicates that the formation of oxide clusters is favored over a regime of uniform oxidation. Our findings provide a detailed description of the O bonding and stress the importance of modeling the adsorption of multiple O atoms for an accurate description of the surface oxidation.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.85.195307
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