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Author Shakouri, K.; Badalyan, S.M.; Peeters, F.M. url  doi
openurl 
  Title Helical liquid of snake states Type A1 Journal article
  Year 2013 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 88 Issue 19 Pages 195404-195405  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We derive an exact solution to the problem of spin snake states induced in a nonhomogeneous magnetic field by a combined action of the Rashba spin-orbit and Zeeman fields. The electron spin behavior as a function of the cyclotron orbit center position and an external homogeneous magnetic field was obtained. It is shown that in an antisymmetric magnetic field the electron spin in the snake states has only an in-plane projection, perpendicular to the magnetic interface, which vanishes at large positive momenta. Applying an external homogeneous magnetic field adds a finite out-of-plane spin component and simultaneously gaps out the spectral branches, which results in regular beating patterns of the spin current components.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000326820200007 Publication Date 2013-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 3 Open Access  
  Notes ; This work was supported by the Methusalem program of the Flemish government and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 3.836; 2013 IF: 3.664  
  Call Number UA @ lucian @ c:irua:112712 Serial 1416  
Permanent link to this record
 

 
Author Bervoets, A.R.J.; Behets, G.J.; Schryvers, D.; Roels, F.; Yang, Z.; Verberckmoes, S.C.; Damment, S.J.P.; Dauwe, S.; Mubiana, V.K.; Blust, R.; de Broe, M.E.; d' Haese, P.C. pdf  doi
openurl 
  Title Hepatocellular transport and gastrointestinal absorption of lanthanum in chronic renal failure Type A1 Journal article
  Year 2009 Publication Kidney international Abbreviated Journal Kidney Int  
  Volume 75 Issue Pages 389-398  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Pathophysiology  
  Abstract Lanthanum carbonate is a new phosphate binder that is poorly absorbed from the gastrointestinal tract and eliminated largely by the liver. After oral treatment, we and others had noticed 23 fold higher lanthanum levels in the livers of rats with chronic renal failure compared to rats with normal renal function. Here we studied the kinetics and tissue distribution, absorption, and subcellular localization of lanthanum in the liver using transmission electron microscopy, electron energy loss spectrometry, and X-ray fluoresence. We found that in the liver lanthanum was located in lysosomes and in the biliary canal but not in any other cellular organelles. This suggests that lanthanum is transported and eliminated by the liver via a transcellular, endosomal-lysosomal-biliary canicular transport route. Feeding rats with chronic renal failure orally with lanthanum resulted in a doubling of the liver levels compared to rats with normal renal function, but the serum levels were similar in both animal groups. These levels plateaued after 6 weeks at a concentration below 3 g/g in both groups. When lanthanum was administered intravenously, thereby bypassing the gastrointestinal tract-portal vein pathway, no difference in liver levels was found between rats with and without renal failure. This suggests that there is an increased gastrointestinal permeability or absorption of oral lanthanum in uremia. Lanthanum levels in the brain and heart fluctuated near its detection limit with long-term treatment (20 weeks) having no effect on organ weight, liver enzyme activities, or liver histology. We suggest that the kinetics of lanthanum in the liver are consistent with a transcellular transport pathway, with higher levels in the liver of uremic rats due to higher intestinal absorption.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication New York, N.Y. Editor  
  Language Wos 000263145800009 Publication Date 2008-12-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0085-2538;1523-1755; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 8.395 Times cited 29 Open Access  
  Notes Fwo; Iwt Approved Most recent IF: 8.395; 2009 IF: 6.193  
  Call Number UA @ lucian @ c:irua:72290 Serial 1417  
Permanent link to this record
 

 
Author Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schaffer, C. pdf  doi
openurl 
  Title Hetero-epitaxial growth of CoSi2 thin films on Si(100) : template effects and epitaxial orientations Type A1 Journal article
  Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 191 Issue 3 Pages 430-438  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Amsterdam Editor  
  Language Wos 000075032500017 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.751; 1998 IF: 1.307  
  Call Number UA @ lucian @ c:irua:102930 Serial 1418  
Permanent link to this record
 

 
Author Vidick, D.; Ke, X.; Devillers, M.; Poleunis, C.; Delcorte, A.; Moggi, P.; Van Tendeloo, G.; Hermans, S. pdf  url
doi  openurl
  Title Heterometal nanoparticles from Ru-based molecular clusters covalently anchored onto functionalized carbon nanotubes and nanofibers Type A1 Journal article
  Year 2015 Publication Beilstein journal of nanotechnology Abbreviated Journal Beilstein J Nanotech  
  Volume 6 Issue 6 Pages 1287-1297  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Heterometal clusters containing Ru and Au, Co and/or Pt are anchored onto carbon nanotubes and nanofibers functionalized with chelating phosphine groups. The cluster anchoring yield is related to the amount of phosphine groups available on the nanocarbon surface. The ligands of the anchored molecular species are then removed by gentle thermal treatment in order to form nanoparticles. In the case of Au-containing clusters, removal of gold atoms from the clusters and agglomeration leads to a bimodal distribution of nanoparticles at the nanocarbon surface. In the case of Ru-Pt species, anchoring occurs without reorganization through a ligand exchange mechanism. After thermal treatment, ultrasmall (1-3 nm) bimetal Ru-Pt nanoparticles are formed on the surface of the nanocarbons. Characterization by high resolution transmission electron microscopy (HRTEM) and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirms their bimetal nature on the nanoscale. The obtained bimetal nanoparticles supported on nanocarbon were tested as catalysts in ammonia synthesis and are shown to be active at low temperature and atmospheric pressure with very low Ru loading.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000355908400001 Publication Date 2015-06-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2190-4286; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.127 Times cited 7 Open Access  
  Notes 246791 Countatoms; 262348 Esmi Approved Most recent IF: 3.127; 2015 IF: 2.670  
  Call Number c:irua:126431 Serial 1420  
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Author Bacaksiz, C.; Sahin, H.; Ozaydin, H.D.; Horzum, S.; Senger, R.T.; Peeters, F.M. url  doi
openurl 
  Title Hexagonal A1N : dimensional-crossover-driven band-gap transition Type A1 Journal article
  Year 2015 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 91 Issue 91 Pages 085430  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013)], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm(-1) and an E-g mode at 703 cm(-1), which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA'-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N = 1 – 9, we predict that thicker structures (N >= 10) have a direct band gap at the Gamma point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000350319200020 Publication Date 2015-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 99 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem foundation of the Flemish government. Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). C.B. and R.T.S. acknowledge the support from TUBITAK Project No 114F397. H.S. is supported by a FWO Pegasus Long Marie Curie Fellowship. ; Approved Most recent IF: 3.836; 2015 IF: 3.736  
  Call Number c:irua:125416 Serial 1421  
Permanent link to this record
 

 
Author Ao, Z.M.; Peeters, F.M. url  doi
openurl 
  Title High-capacity hydrogen storage in Al-adsorbed graphene Type A1 Journal article
  Year 2010 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 81 Issue 20 Pages 205406,1-205406,7  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A high-capacity hydrogen storage mediumAl-adsorbed grapheneis proposed based on density-functional theory calculations. We find that a graphene layer with Al adsorbed on both sides can store hydrogen up to 13.79 wt % with average adsorption energy −0.193 eV/H2. Its hydrogen storage capacity is in excess of 6 wt %, surpassing U. S. Department of Energy (DOEs) target. Based on the binding-energy criterion and molecular-dynamics calculations, we find that hydrogen storage can be recycled at near ambient conditions. This high-capacity hydrogen storage is due to the adsorbed Al atoms that act as bridges to link the electron clouds of the H2 molecules and the graphene layer. As a consequence, a two-layer arrangement of H2 molecules is formed on each side of the Al-adsorbed graphene layer. The H2 concentration in the hydrogen storage medium can be measured by the change in the conductivity of the graphene layer.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000278144500082 Publication Date 2010-05-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 219 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 3.836; 2010 IF: 3.774  
  Call Number UA @ lucian @ c:irua:83386 Serial 1422  
Permanent link to this record
 

 
Author Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. openurl 
  Title High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers Type P1 Proceeding
  Year 2004 Publication Materials Research Society symposium proceedings Abbreviated Journal  
  Volume 798 Issue Pages Y10.22,1-6  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Wuhan Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0272-9172 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54861 Serial 1424  
Permanent link to this record
 

 
Author Bruno-Alfonso, A.; Hai, G.-Q.; Peeters, F.M.; Yeo, T.; Ryu, S.R.; McCombe, B.D. doi  openurl
  Title High energy transitions of shallow magneto-donors in a GaAs/Al0.3Ga0.7As multiple quantum well Type A1 Journal article
  Year 2001 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat  
  Volume 13 Issue Pages 9761-9772  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication London Editor  
  Language Wos 000172233300007 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-8984;1361-648X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.649 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.649; 2001 IF: 1.611  
  Call Number UA @ lucian @ c:irua:37301 Serial 1426  
Permanent link to this record
 

 
Author Wang, Y.J.; Jiang, Z.X.; McCombe, B.D.; Peeters, F.M.; Wu, X.G.; Hai, G.Q.; Eusfis, T.J.; Schaff, W. doi  openurl
  Title High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures Type A1 Journal article
  Year 1998 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 256/258 Issue Pages 215-219  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Amsterdam Editor  
  Language Wos 000077775900059 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.386; 1998 IF: 0.619  
  Call Number UA @ lucian @ c:irua:24179 Serial 1427  
Permanent link to this record
 

 
Author Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Foxon, C.T.; Harris, J.J. doi  openurl
  Title High-field magneto-resistance in GaAs-GaAlAs heterojunctions Type A1 Journal article
  Year 1993 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 184 Issue Pages 197-201  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Amsterdam Editor  
  Language Wos A1993KU62100039 Publication Date 2002-10-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.319 Times cited 4 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:5746 Serial 1428  
Permanent link to this record
 

 
Author Sidor, Y.; Partoens, B.; Peeters, F.M.; Schildermans, N.; Hayne, M.; Moshchalkov, V.V.; Rastelli, A.; Schmidt, O.G. url  doi
openurl 
  Title High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots Type A1 Journal article
  Year 2006 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 73 Issue 15 Pages 155334,1-8  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Lancaster, Pa Editor  
  Language Wos 000237155100084 Publication Date 2006-04-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 50 Open Access  
  Notes Approved Most recent IF: 3.836; 2006 IF: 3.107  
  Call Number UA @ lucian @ c:irua:58275 Serial 1429  
Permanent link to this record
 

 
Author Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Singleton, J.; Perenboom, J.A.; van Bockstal, L.; Herlach, F.; Foxon, C.T.; Harris, J.J. doi  openurl
  Title High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering Type A1 Journal article
  Year 1993 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 48 Issue 8 Pages 5457-5468  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Lancaster, Pa Editor  
  Language Wos A1993LV38500055 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.736 Times cited 22 Open Access  
  Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #  
  Call Number UA @ lucian @ c:irua:5750 Serial 1430  
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Author van der Burgt, M.; van Esch, A.; Peeters, F.M.; van Hove, M.; Borghs, G.; Herlach, F. doi  openurl
  Title High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures Type A1 Journal article
  Year 1993 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 184 Issue Pages 211-215  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Amsterdam Editor  
  Language Wos A1993KU62100042 Publication Date 2002-10-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.319 Times cited 4 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:5792 Serial 1432  
Permanent link to this record
 

 
Author Retuerto, M.; Li, M.R.; Go, Y.B.; Ignatov, A.; Croft, M.; Ramanujachary, K.V.; Herber, R.H.; Nowik, I.; Hodges, J.P.; Dachraoui, W.; Hadermann, J.; Greenblatt, M.; pdf  doi
openurl 
  Title High magnetic ordering temperature in the perovskites Sr4-xLaxFe3ReO12 (x=0.0, 1.0, 2.0) Type A1 Journal article
  Year 2012 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 194 Issue Pages 48-58  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A series of perovskites Sr4−xLaxFe3ReO12 (x=0.0, 1.0, 2.0) has been prepared by wet chemistry methods. The structure analyses by powder X-ray and neutron diffraction and electron microscopy show that these compounds adopt simple perovskite structures without cation ordering over the B sites: tetragonal (I4/mcm) for x=0.0 and 1.0 and orthorhombic (Pbmn) for x=2.0. The oxidation states of the cations in the compound with x=0.0 appear to be Fe3+/4+ and Re7+ and decrease for both with La substitution as evidenced by X-ray absorption spectroscopy. All the compounds are antiferromagnetically ordered above room temperature, as demonstrated by Mössbauer spectroscopy and the magnetic structures, which were determined by powder neutron diffraction. The substitution of Sr by La strongly affects the magnetic properties with an increase of TN up to ∼750 K.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication London Editor  
  Language Wos 000308896400009 Publication Date 2012-07-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.299 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.299; 2012 IF: 2.040  
  Call Number UA @ lucian @ c:irua:101220 Serial 1435  
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Author Wu, M.F.; Zhou, S.; Yao, S.; Zhao, Q.; Vantomme, A.; van Daele, B.; Piscopiello, E.; Van Tendeloo, G.; Tong, Y.Z.; Yang, Z.J.; Yu, T.J.; Zhang, G.Y. pdf  doi
openurl 
  Title High precision determination of the elastic strain of InGaN/GaN multiple quantum wells Type A1 Journal article
  Year 2004 Publication Journal of vacuum science and technology: B: microelectronics and nanometer structures Abbreviated Journal  
  Volume 22 Issue 3 Pages 920-924  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000222481400010 Publication Date 2004-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-211X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 15 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54863 Serial 1437  
Permanent link to this record
 

 
Author Vagov, A.; Croitoru, M.D.; Axt, V.M.; Kuhn, T.; Peeters, F.M. doi  openurl
  Title High pulse area undamping of Rabi oscillations in quantum dots coupled to phonons Type A1 Journal article
  Year 2006 Publication Physica status solidi B – Basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 243 Issue 10 Pages 2233-2240  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000239932300005 Publication Date 2006-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 16 Open Access  
  Notes Approved Most recent IF: 1.674; 2006 IF: 0.967  
  Call Number UA @ lucian @ c:irua:60891 Serial 1440  
Permanent link to this record
 

 
Author Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Antipov, E.V.; Kovba, L.M. pdf  doi
openurl 
  Title High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases Type A1 Journal article
  Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 113 Issue Pages 193-203  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication London Editor  
  Language Wos A1994PP02200027 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.133 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10036 Serial 1443  
Permanent link to this record
 

 
Author Oleshko, V.; Volkov, V.; Gijbels, R.; Jacob, W.; Vargaftik, M.; Moiseev, I.; Van Tendeloo, G. doi  openurl
  Title High-resolution electron microscopy and electron energy-loss spectroscopy of giant palladium clusters Type A1 Journal article
  Year 1995 Publication Zeitschrift für Physik : D : atoms, molecules and clusters Abbreviated Journal  
  Volume 34 Issue Pages 283-291  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Berlin Editor  
  Language Wos A1995RY37000010 Publication Date 2005-04-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0178-7683;1434-6079; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 22 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:12276 Serial 1444  
Permanent link to this record
 

 
Author Volkov, V.V.; Van Tendeloo, G.; Vargaftik, M.N.; Moiseev, I.I. doi  openurl
  Title High-resolution electron microscopy observations of large Pd clusters Type A1 Journal article
  Year 1993 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 132 Issue Pages 359-363  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Amsterdam Editor  
  Language Wos A1993MA03200001 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.698 Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:6839 Serial 1452  
Permanent link to this record
 

 
Author Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S.; Ju, H.L.; Krishnan, K.M. pdf  doi
openurl 
  Title High-resolution electron microscopy study of strained epitaxial La0.7Sr0.3MnO3 thin films Type A1 Journal article
  Year 2000 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A  
  Volume 80 Issue 3 Pages 673-691  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication London Editor  
  Language Wos 000085873500011 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610;1460-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 52 Open Access  
  Notes IUAP 4-10; reprint Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54751 Serial 1456  
Permanent link to this record
 

 
Author Yandouzi, M.; Toth, L.; Schryvers, D. doi  openurl
  Title High resolution transmission electron microscopy study of nanoscale Ni-rich Ni-Al films evaporated onto NaCl and KCl Type A1 Journal article
  Year 1998 Publication Nanostructured materials Abbreviated Journal Nanostruct Mater  
  Volume 10 Issue Pages 99-115  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication New York Editor  
  Language Wos 000073840600011 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0965-9773; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48370 Serial 1463  
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Author Colla, M.-S.; Wang, B.; Idrissi, H.; Schryvers, D.; Raskin, J.-P.; Pardoen, T. pdf  doi
openurl 
  Title High strength-ductility of thin nanocrystalline palladium films with nanoscale twins : on-chip testing and grain aggregate model Type A1 Journal article
  Year 2012 Publication Acta materialia Abbreviated Journal Acta Mater  
  Volume 60 Issue 4 Pages 1795-1806  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The mechanical behaviour of thin nanocrystalline palladium films with an ∼30 nm in plane grain size has been characterized on chip under uniaxial tension. The films exhibit a large strain hardening capacity and a significant increase in the strength with decreasing thickness. Transmission electron microscopy has revealed the presence of a moderate density of growth nanotwins interacting with dislocations. A semi-analytical grain aggregate model is proposed to investigate the impact of different contributions to the flow behaviour, involving the effect of twins, of grain size and of the presence of a thin surface layer. This model provides guidelines to optimizing the strength/ductility ratio of the films.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Oxford Editor  
  Language Wos 000301989500035 Publication Date 2012-02-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6454; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.301 Times cited 38 Open Access  
  Notes Iap Approved Most recent IF: 5.301; 2012 IF: 3.941  
  Call Number UA @ lucian @ c:irua:94213 Serial 1465  
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Author Földi, P.; Szaszkó-Bogár, V.; Peeters, F.M. url  doi
openurl 
  Title High-temperature conductance of a two-dimensional superlattice controlled by spin-orbit interaction Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 83 Issue 11 Pages 115313-115313,6  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Rashba-type spin-orbit interaction (SOI) controlled band structure of a two-dimensional superlattice allows for the modulation of the conductance of finite size devices by changing the strength of the SOI. We consider rectangular arrays and find that the temperature dependence of the conductance disappears for high temperatures, but the strength of the SOI still affects the conductance at these temperatures. The modulation effect can be seen even in the presence of strong dephasing, which can be important for practical applications.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000288242800007 Publication Date 2011-03-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 8 Open Access  
  Notes ; We thank M. G. Benedict and F. Bartha for useful discussions. This work was supported by the Flemish Science Foundation (FWO-Vl), the Belgian Science Policy (IAP), the Hungarian Scientific Research Fund (OTKA) under Contracts No. T81364 and M045596 and by the “TAMOP-4.2.1/B-09/1/KONV-2010-0005 project: Creating the Center of Excellence at the University of Szeged” supported by the EU and the European Regional Development Fund. P.F. was supported by a J. Bolyai grant of the Hungarian Academy of Sciences. ; Approved Most recent IF: 3.836; 2011 IF: 3.691  
  Call Number UA @ lucian @ c:irua:88778 Serial 1466  
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Author King, G.; Abakumov, A.M.; Woodward, P.M.; Llobet, A.; Tsirlin, A.A.; Batuk, D.; Antipov, E.V. doi  openurl
  Title The high-temperature polymorphs of K3AlF6 Type A1 Journal article
  Year 2011 Publication Inorganic chemistry Abbreviated Journal Inorg Chem  
  Volume 50 Issue 16 Pages 7792-7801  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The crystal structures of the three high-temperature polymorphs of K3AlF6 have been solved from neutron powder diffraction, synchrotron X-ray powder diffraction, and electron diffraction data. The β-phase (stable between 132 and 153 °C) and γ-phase (stable between 153 to 306 °C) can be described as unusually complex superstructures of the double-perovskite structure (K2KAlF6) which result from noncooperative tilting of the AlF6 octahedra. The β-phase is tetragonal, space group I4/m, with lattice parameters of a = 13.3862(5) Å and c = 8.5617(3) Å (at 143 °C) and Z = 10. In this phase, one-fifth of the AlF6 octahedra are rotated about the c-axis by 45° while the other four-fifths remain untilted. The large 45° rotations result in edge sharing between these AlF6 octahedra and the neighboring K-centered polyhedra, resulting in pentagonal bipyramidal coordination for four-fifths of the K+ ions that reside on the B-sites of the perovskite structure. The remaining one-fifth of the K+ ions on the B-sites retain octahedral coordination. The γ-phase is orthorhombic, space group Fddd, with lattice parameters of a = 36.1276(4) Å, b = 17.1133(2) Å, and c = 12.0562(1) Å (at 225 °C) and Z = 48. In the γ-phase, one-sixth of the AlF6 octahedra are randomly rotated about one of two directions by 45° while the other five-sixths remain essentially untilted. These rotations result in two-thirds of the K+ ions on the B-site obtaining 7-fold coordination while the other one-third remain in octahedral coordination. The δ-phase adopts the ideal cubic double-perovskite structure, space group Fmm, with a = 8.5943(1) Å at 400 °C. However, pair distribution function analysis shows that locally the δ-phase is quite different from its long-range average crystal structure. The AlF6 octahedra undergo large-amplitude rotations which are accompanied by off-center displacements of the K+ ions that occupy the 12-coordinate A-sites.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Easton, Pa Editor  
  Language Wos 000293493100052 Publication Date 2011-07-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0020-1669;1520-510X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.857 Times cited 19 Open Access  
  Notes Approved Most recent IF: 4.857; 2011 IF: 4.601  
  Call Number UA @ lucian @ c:irua:91131 Serial 1468  
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Author Zhang, F.; Vanmeensel, K.; Batuk, M.; Hadermann, J.; Inokoshi, M.; Van Meerbeek, B.; Naert, I.; Vleugels, J. pdf  url
doi  openurl
  Title Highly-translucent, strong and aging-resistant 3Y-TZP ceramics for dental restoration by grain boundary segregation Type A1 Journal article
  Year 2015 Publication Acta biomaterialia Abbreviated Journal Acta Biomater  
  Volume 16 Issue 16 Pages 215-222  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Latest trends in dental restorative ceramics involve the development of full-contour 3Y-TZP ceramics which can avoid chipping of veneering porcelains. Among the challenges are the low translucency and the hydrothermal stability of 3Y-TZP ceramics. In this work, different trivalent oxides (Al2O3, Sc2O3, Nd2O3 and La2O3) were selected to dope 3Y-TZP ceramics. Results show that dopant segregation was a key factor to design hydrothermally stable and high-translucent 3Y-TZP ceramics and the cation dopant radius could be used as a controlling parameter. A large trivalent dopant, oversized as compared to Zr4+, exhibiting strong segregation at the ZrO2 grain boundary was preferred. The introduction of 0.2 mol% La2O3 in conventional 0.10.25 wt.% Al2O3-doped 3Y-TZP resulted in an excellent combination of high translucency and superior hydrothermal stability, while retaining excellent mechanical properties.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication S.l. Editor  
  Language Wos 000351978600021 Publication Date 2015-02-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-7061; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 6.319 Times cited 54 Open Access  
  Notes Fwo G043110n Approved Most recent IF: 6.319; 2015 IF: 6.025  
  Call Number c:irua:124421 Serial 1473  
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Author Mlinar, V.; Tadić, M.; Peeters, F.M. url  doi
openurl 
  Title Hole and exciton energy levels in InP/InxGa1-xP quantum dot molecules: influence of geometry and magnetic field dependence Type A1 Journal article
  Year 2006 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 73 Issue 23 Pages 235336,1-10  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Lancaster, Pa Editor  
  Language Wos 000238696600104 Publication Date 2006-06-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 16 Open Access  
  Notes Approved Most recent IF: 3.836; 2006 IF: 3.107  
  Call Number UA @ lucian @ c:irua:59708 Serial 1474  
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Author Peeters, F.M.; Tadić, M.; Janssens, K.L.; Partoens, B. openurl 
  Title Hole band engineering in self-assembled quantum dots and molecules Type H1 Book chapter
  Year 2004 Publication Abbreviated Journal  
  Volume Issue Pages 191-202  
  Keywords H1 Book chapter; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:62454 Serial 1475  
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Author Retuerto, M.; Yin, Z.; Emge, T.J.; Stephens, P.W.; Li, M.R.; Sarkar, T.; Croft, M.C.; Ignatov, A.; Yuan, Z.; Zhang, S.J.; Jin, C.; Paria Sena, R.; Hadermann, J.; Kotliar, G.; Greenblatt, M.; pdf  url
doi  openurl
  Title Hole doping and structural transformation in CsTl1-xHgxCl3 Type A1 Journal article
  Year 2015 Publication Inorganic chemistry Abbreviated Journal Inorg Chem  
  Volume 54 Issue 54 Pages 1066-1075  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract CsTlCl3 and CsTlF3 perovskites have been theoretically predicted to be superconductors when properly hole-doped. Both compounds have been previously prepared as pure compounds: CsTlCl3 in a tetragonal (I4/m) and a cubic (Fm3̅m) perovskite polymorph and CsTlF3 as a cubic perovskite (Fm3̅m). In this work, substitution of Tl in CsTlCl3 with Hg is reported, in an attempt to hole-dope the system and induce superconductivity. The whole series CsTl1xHgxCl3 (x = 0.0, 0.1, 0.2, 0.4, 0.6, and 0.8) was prepared. CsTl0.9Hg0.1Cl3 is tetragonal as the more stable phase of CsTlCl3. However, CsTl0.8Hg0.2Cl3 is already cubic with the space group Fm3̅m and with two different positions for Tl+ and Tl3+. For x = 0.4 and 0.5, solid solutions could not be formed. For x ≥ 0.6, the samples are primitive cubic perovskites with one crystallographic position for Tl+, Tl3+, and Hg2+. All of the samples formed are insulating, and there is no signature of superconductivity. X-ray absorption spectroscopy indicates that all of the samples have a mixed-valence state of Tl+ and Tl3+. Raman spectroscopy shows the presence of the active TlClTl stretching mode over the whole series and the intensity of the TlClHg mode increases with increasing Hg content. First-principle calculations confirmed that the phases are insulators in their ground state and that Hg is not a good dopant in the search for superconductivity in this system.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Easton, Pa Editor  
  Language Wos 000348887400048 Publication Date 2014-12-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0020-1669;1520-510X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.857 Times cited 5 Open Access  
  Notes Approved Most recent IF: 4.857; 2015 IF: 4.762  
  Call Number c:irua:124420 Serial 1476  
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Author Čukarić, N.; Arsoski, V.; Tadić, M.; Peeters, F.M. url  doi
openurl 
  Title Hole states in nanocups in a magnetic field Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 85 Issue 23 Pages 235425-235425,11  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The magnetic-field dependence of the hole states in a nanocup, which is composed of a ring (the nanocup rim) that surrounds a disk (the nanocup bottom), is obtained within the Luttinger-Kohn model for the unstrained GaAs/(Al,Ga) As and the strained (In,Ga) As/GaAs systems. Aharonov-Bohm oscillations due to angular momentum transitions of the hole ground state appear with periods that vary with the thickness of the disk. The strain in the (In, Ga) As/GaAs nanocup is sensitive to the disk thickness and favors the spatial localization of the heavy holes inside the disk. Therefore, the angular momentum transitions between the valence-band states disappear for much thinner disks than in the case of the unstrained GaAs/(Al, Ga) As nanocups. In both systems, the oscillations in the energy of the hole ground state are found to disappear for thinner inner layer than in the electron ground-state energy. This is due to the different confining potentials and the mixing between the heavy- and light-hole states. As a consequence, magnetization of the single hole is found to strongly depend on the bottom thickness of the strained (In, Ga) As/GaAs nanocup. Furthermore, we found that the strain can lead to a spatial separation of the electron and the hole, as in type-II band alignment, which is advantageous for the appearance of the excitonic Aharonov-Bohm effect.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Wos 000305116700005 Publication Date 2012-06-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 4 Open Access  
  Notes ; The authors thank B. Partoens for useful discussions. This work was supported by the EU NoE: SANDiE, the Ministry of Education and Science of Serbia, and the Belgian Science Policy (IAP). ; Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:98906 Serial 1477  
Permanent link to this record
 

 
Author Goldoni, G.; Peeters, F.M. doi  openurl
  Title Hole subbands and effective masses in p-doped [113]-grown heterojunctions Type A1 Journal article
  Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 51 Issue Pages 17806-17813  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Lancaster, Pa Editor  
  Language Wos A1995RF85700056 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.736 Times cited 14 Open Access  
  Notes Approved CHEMISTRY, PHYSICAL 48/144 Q2 #  
  Call Number UA @ lucian @ c:irua:12195 Serial 1478  
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