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Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures Type A1 Journal article
Year (down) 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc
Volume 4 Issue 1/3 Pages 117-119
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000167727200028 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.359 Times cited 6 Open Access
Notes Approved Most recent IF: 2.359; 2001 IF: 0.419
Call Number UA @ lucian @ c:irua:94968 Serial 3602
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Author Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G.
Title Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures Type A1 Journal article
Year (down) 2001 Publication Journal of the electrochemical society Abbreviated Journal J Electrochem Soc
Volume 148 Issue 11 Pages G597-G601
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000171653100038 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-4651; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.259 Times cited 13 Open Access
Notes Approved Most recent IF: 3.259; 2001 IF: 2.033
Call Number UA @ lucian @ c:irua:103394 Serial 1725
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Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title Morphology and defects in shallow trench isolation structures Type A1 Journal article
Year (down) 1999 Publication Conference series of the Institute of Physics Abbreviated Journal
Volume 164 Issue Pages 443-446
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000166835300094 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29690 Serial 2206
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