Records |
Author |
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
Title |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
72 |
Issue |
22 |
Pages |
2877-2879 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000075273700034 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
16 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 3.411; 1998 IF: 3.349 |
Call Number |
UA @ lucian @ c:irua:29684 |
Serial |
1447 |
Permanent link to this record |
|
|
|
Author |
van Landuyt, J.; Van Tendeloo, G. |
Title |
HREM for characterisation of nanoscale microstructures |
Type |
P3 Proceeding |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
|
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
15-18 |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Kyoto |
Editor |
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:25687 |
Serial |
1499 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.C.; van Landuyt, J.; Dincã, G. |
Title |
HREM of defects in cubic boron nitride single crystals |
Type |
P1 Proceeding |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
|
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
695-696 |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Cancun |
Editor |
|
Language |
|
Wos |
000077019900341 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29679 |
Serial |
1508 |
Permanent link to this record |
|
|
|
Author |
Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Title |
Laser thermotreatment of the SnO2layers |
Type |
P1 Proceeding |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Eurosensors XII, vols 1 and 2 |
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
481-484 |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
Abstract |
The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
000077311200117 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0-7503-0536-3 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:104343 |
Serial |
1798 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
Volume |
77 |
Issue |
2 |
Pages |
423-435 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000071976400010 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
23 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29671 |
Serial |
2440 |
Permanent link to this record |
|
|
|
Author |
Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H. |
Title |
Precipitation behavior in Cu-Co alloy |
Type |
P3 Proceeding |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
|
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
205-206 |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Kyoto |
Editor |
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29682 |
Serial |
2689 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.C.; van Landuyt, J. |
Title |
Structural studies of diamond thin films grown from the arc plasma |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
Volume |
12 |
Issue |
10 |
Pages |
2533-2542 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
A1997YD17000007 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0884-2914 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.673 |
Times cited |
13 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.673; 1998 IF: 1.539 |
Call Number |
UA @ lucian @ c:irua:29674 |
Serial |
3259 |
Permanent link to this record |
|
|
|
Author |
Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J. |
Title |
TEM study on precipitation behavior in Cu-Co alloys |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
168 |
Issue |
|
Pages |
27-35 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000075226500005 |
Publication Date |
2002-09-10 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
18 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29677 |
Serial |
3494 |
Permanent link to this record |
|
|
|
Author |
van Landuyt, J. |
Title |
Een tempel voor elektronenmicroscopie “kijken naar atomen” |
Type |
A3 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Fonds informatief |
Abbreviated Journal |
|
Volume |
38 |
Issue |
|
Pages |
13-17 |
Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Antwerpen |
Editor |
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0776-8133 |
ISBN |
|
Additional Links |
UA library record |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29673 |
Serial |
3495 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J. |
Title |
Transmission electron microscopy studies of (111) twinned silver halide microcrystals |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1998 |
Publication |
Microscopy research and technique |
Abbreviated Journal |
Microsc Res Techniq |
Volume |
42 |
Issue |
|
Pages |
85-99 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000075521300003 |
Publication Date |
2002-08-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1059-910X;1097-0029; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.147 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.147; 1998 IF: 0.765 |
Call Number |
UA @ lucian @ c:irua:29676 |
Serial |
3713 |
Permanent link to this record |
|
|
|
Author |
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Title |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
Microelectron Eng |
Volume |
45 |
Issue |
2-3 |
Pages |
277-282 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000081748600023 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0167-9317; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
Impact Factor |
1.806 |
Times cited |
|
Open Access |
|
Notes |
Fwo-G.0051.97; Fwo-G.00117.86 |
Approved |
Most recent IF: 1.806; 1999 IF: 0.815 |
Call Number |
UA @ lucian @ c:irua:95791 |
Serial |
47 |
Permanent link to this record |
|
|
|
Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
Volume |
70 |
Issue |
9 |
Pages |
3661-3663 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000082289200026 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0034-6748; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
Volume |
|
Issue |
164 |
Pages |
495-498 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
000166835300106 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
Permanent link to this record |
|
|
|
Author |
Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. |
Title |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Journal of vacuum science and technology: A: vacuum surfaces and films |
Abbreviated Journal |
J Vac Sci Technol A |
Volume |
17 |
Issue |
1 |
Pages |
249-255 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000078136300038 |
Publication Date |
2002-07-27 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0734-2101; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.374 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.374; 1999 IF: 1.742 |
Call Number |
UA @ lucian @ c:irua:29689 |
Serial |
581 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
171 |
Issue |
1 |
Pages |
147-157 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Wiley |
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000078539700020 |
Publication Date |
2002-09-10 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
40 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:95798 |
Serial |
1152 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
171 |
Issue |
1 |
Pages |
147-157 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000078539700020 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
40 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29687 |
Serial |
1153 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N. |
Title |
High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Diamonds an related materials |
Abbreviated Journal |
Diam Relat Mater |
Volume |
8 |
Issue |
|
Pages |
738-742 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
000080437000123 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0925-9635; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.561 |
Times cited |
7 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.561; 1999 IF: 1.924 |
Call Number |
UA @ lucian @ c:irua:27519 |
Serial |
1445 |
Permanent link to this record |
|
|
|
Author |
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Title |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
75 |
Issue |
19 |
Pages |
2912-2914 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000083483900014 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
481 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 3.411; 1999 IF: 4.184 |
Call Number |
UA @ lucian @ c:irua:29643 |
Serial |
1484 |
Permanent link to this record |
|
|
|
Author |
Rembeza, E.S.; Richard, O.; van Landuyt, J. |
Title |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
34 |
Issue |
10/11 |
Pages |
1527-1533 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000084625300006 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.446 |
Times cited |
17 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.446; 1999 IF: 0.840 |
Call Number |
UA @ lucian @ c:irua:29691 |
Serial |
1626 |
Permanent link to this record |
|
|
|
Author |
Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
Title |
Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Physical chemistry, chemical physics |
Abbreviated Journal |
Phys Chem Chem Phys |
Volume |
1 |
Issue |
|
Pages |
3703-3708 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Cambridge |
Editor |
|
Language |
|
Wos |
000081765300046 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1463-9076;1463-9084; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
4.123 |
Times cited |
10 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 4.123; 1999 IF: NA |
Call Number |
UA @ lucian @ c:irua:28250 |
Serial |
1660 |
Permanent link to this record |
|
|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Title |
Morphology and defects in shallow trench isolation structures |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
Volume |
164 |
Issue |
|
Pages |
443-446 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000166835300094 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29690 |
Serial |
2206 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.; van Landuyt, J.; Ralchenko, V. |
Title |
Structural aspects of CVD idamond wafers grown at different hydrogen flow rates |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
1999 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
Volume |
171 |
Issue |
|
Pages |
5-10 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
000081733800007 |
Publication Date |
2002-09-10 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
15 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29688 |
Serial |
3207 |
Permanent link to this record |
|
|
|
Author |
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Title |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
Abbreviated Journal |
Mrs Internet J N S R |
Volume |
5 |
Issue |
s:[1] |
Pages |
art. no.-W11.38 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
|
Language |
|
Wos |
000090103600097 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1092-5783 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:103471 |
Serial |
423 |
Permanent link to this record |
|
|
|
Author |
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Title |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
Type |
P1 Proceeding |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
|
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
38-43 |
Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Soc imaging science technology |
Place of Publication |
Springfield |
Editor |
|
Language |
|
Wos |
000183315900012 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0-89208-229-1 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
Impact Factor |
|
Times cited |
|
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:95777 |
Serial |
617 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Title |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
77 |
Issue |
4 |
Pages |
507-509 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X]. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000088225400016 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
44 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
Call Number |
UA @ lucian @ c:irua:103448 |
Serial |
712 |
Permanent link to this record |
|
|
|
Author |
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
Title |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
Abbreviated Journal |
Mater Sci Forum |
Volume |
338-3 |
Issue |
|
Pages |
309-312 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Trans tech publications ltd |
Place of Publication |
Zurich-uetikon |
Editor |
|
Language |
|
Wos |
000165996700075 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0255-5476 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:104262 |
Serial |
1071 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
Title |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
Volume |
61 |
Issue |
15 |
Pages |
10336-10345 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
000086606200082 |
Publication Date |
2002-07-27 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0163-1829;1095-3795; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.836 |
Times cited |
27 |
Open Access |
|
Notes |
Conference Name: Microsc. Semicond. Mater. Conf. |
Approved |
Most recent IF: 3.836; 2000 IF: NA |
Call Number |
UA @ lucian @ c:irua:103456 |
Serial |
1577 |
Permanent link to this record |
|
|
|
Author |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Title |
Interaction of a Ti-capped Co thin film with Si3N4 |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
77 |
Issue |
26 |
Pages |
4307-4309 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000166120500021 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
Call Number |
UA @ lucian @ c:irua:104225 |
Serial |
1683 |
Permanent link to this record |
|
|
|
Author |
Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. |
Title |
Microstructural characterization of diamond films deposited on c-BN crystals |
Type |
A1 Journal article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Diamond and related materials
T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC |
Abbreviated Journal |
Diam Relat Mater |
Volume |
9 |
Issue |
3-6 |
Pages |
269-273 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
000087382400009 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0925-9635; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.561 |
Times cited |
9 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.561; 2000 IF: 1.591 |
Call Number |
UA @ lucian @ c:irua:102877 |
Serial |
2041 |
Permanent link to this record |
|
|
|
Author |
Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Title |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
Type |
P1 Proceeding |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2000 |
Publication |
Sensors and actuators : B : chemical |
Abbreviated Journal |
Sensor Actuat B-Chem |
Volume |
68 |
Issue |
1-3 |
Pages |
140-145 |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab |
Abstract |
Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
Language |
|
Wos |
000089218000022 |
Publication Date |
2002-07-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0925-4005; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
5.401 |
Times cited |
51 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 5.401; 2000 IF: 1.470 |
Call Number |
UA @ lucian @ c:irua:95167 |
Serial |
3223 |
Permanent link to this record |