Author |
Title |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
Publication |
Volume |
Times cited |
Additional Links |
Cambré, S.; Schoeters, B.; Luyckx, S.; Goovaerts, E.; Wenseleers, W. |
Experimental observation of single-file water filling of thin single-wall carbon nanotubes down to chiral index (5,3) |
2010 |
Physical review letters |
104 |
140 |
UA library record; WoS full record; WoS citing articles |
Bals, S.; Van Aert, S.; Romero, C.P.; Lauwaet, K.; Van Bael, M.J.; Schoeters, B.; Partoens, B.; Yuecelen, E.; Lievens, P.; Van Tendeloo, G. |
Atomic scale dynamics of ultrasmall germanium clusters |
2012 |
Nature communications |
3 |
90 |
UA library record; WoS full record; WoS citing articles |
Schoeters, B.; Neyts, E.C.; Khalilov, U.; Pourtois, G.; Partoens, B. |
Stability of Si epoxide defects in Si nanowires : a mixed reactive force field/DFT study |
2013 |
Physical chemistry, chemical physics |
15 |
3 |
UA library record; WoS full record; WoS citing articles |
Leenaerts, O.; Schoeters, B.; Partoens, B. |
Stable kagome lattices from group IV elements |
2015 |
Physical review : B : condensed matter and materials physics |
91 |
12 |
UA library record; WoS full record; WoS citing articles |
Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. |
Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires |
2015 |
Journal of applied physics |
118 |
3 |
UA library record; WoS full record; WoS citing articles |
Schoeters, B. |
An ab initio study of the properties of doped semiconducting nanwires |
2015 |
|
|
|
UA library record |
Leenaerts, O.; Vercauteren, S.; Schoeters, B.; Partoens, B. |
System-size dependent band alignment in lateral two-dimensional heterostructures |
2016 |
2D materials |
3 |
19 |
UA library record; WoS full record; WoS citing articles |