| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; |
Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics |
2005 |
Journal of the American Ceramic Society |
88 |
11 |
UA library record; WoS full record; WoS citing articles |
| de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
2004 |
Journal of the electrochemical society |
151 |
13 |
UA library record; WoS full record; WoS citing articles |
| de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
2003 |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
340 |
4 |
UA library record; WoS full record; WoS citing articles |
| Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. |
The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals |
2000 |
|
|
|
UA library record; WoS full record; |
| Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
|
|
|
UA library record; WoS full record; |
| Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions |
2003 |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
107 |
9 |
UA library record; WoS full record; WoS citing articles |
| Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
2002 |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
14 |
3 |
UA library record; WoS full record; WoS citing articles |
| Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. |
Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions |
2002 |
Journal of physics : condensed matter |
14 |
7 |
UA library record; WoS full record; WoS citing articles |
| Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions |
2002 |
Journal of applied physics |
92 |
5 |
UA library record; WoS full record; WoS citing articles |
| Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
Reliability of copper dual damascene influenced by pre-clean |
2002 |
Analysis Of Integrated Circuits |
|
5 |
UA library record; WoS full record; WoS citing articles |
| Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation |
2002 |
Microchimica acta |
139 |
3 |
UA library record; WoS full record; WoS citing articles |
| Linssen, T.; Cool, P.; Baroudi, M.; Cassiers, K.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
Leached natural saponite as the silicate source in the synthesis of aluminosilicate hexagonal mesoporous materials |
2002 |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
106 |
23 |
UA library record; WoS full record; WoS citing articles |
| de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
2001 |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
308 |
3 |
UA library record; WoS full record; WoS citing articles |
| Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
2002 |
Journal of applied physics |
91 |
27 |
UA library record; WoS full record; WoS citing articles |
| Ranjan, R.; Pandey, D.; Schuddinck, W.; Richard, O.; De Meulenaere, P.; van Landuyt, J.; Van Tendeloo, G. |
Evolution of crystallographic phases in (Sr1-xCax)TiO3 with composition (x) |
2001 |
Journal of solid state chemistry |
162 |
45 |
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
2001 |
Journal of the electrochemical society |
148 |
13 |
UA library record; WoS full record; WoS citing articles |
| Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
2001 |
Journal of applied physics |
90 |
97 |
UA library record; WoS full record; WoS citing articles |
| Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. |
The influence of the h-BN morphology and structure on the c-BN growth |
2001 |
Diamond and related materials
T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL |
10 |
17 |
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
2001 |
Materials science in semiconductor processing |
4 |
6 |
UA library record; WoS full record; WoS citing articles |
| Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
| Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
2001 |
Journal of materials research |
16 |
4 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Morphology and defects in shallow trench isolation structures |
1999 |
Conference series of the Institute of Physics |
164 |
1 |
UA library record; WoS full record; WoS citing articles |
| van Landuyt, J. |
High resolution electron microscopy for materials |
1992 |
|
|
7 |
UA library record; WoS full record; WoS citing articles |
| Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
| Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
2000 |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
338-3 |
2 |
UA library record; WoS full record; WoS citing articles |
| Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
|
UA library record; WoS full record; |
| Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
2000 |
Sensors and actuators : B : chemical |
68 |
51 |
UA library record; WoS full record; WoS citing articles |
| Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
| Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. |
Microstructural characterization of diamond films deposited on c-BN crystals |
2000 |
Diamond and related materials
T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC |
9 |
9 |
UA library record; WoS full record; WoS citing articles |
