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Farvacque, J.L.
;
Bougrioua, Z.
;
Moerman, I.
;
Van Tendeloo, G.
;
Lebedev, O.
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
1999
Physica: B : condensed matter T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA
273-4
5
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