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Author Shapoval, O.; Huehn, S.; Verbeeck, J.; Jungbauer, M.; Belenchuk, A.; Moshnyaga, V.
Title Interface-controlled magnetism and transport of ultrathin manganite films Type A1 Journal article
Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume (down) 113 Issue 17 Pages 17c711-3
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report ferromagnetic, T-C = 240 K, and metallic, T-MI = 250 K, behaviors of a three unit cell thick interface engineered lanthanum manganite film, grown by metalorganic aerosol deposition technique on SrTiO3(100) substrates. Atomically resolved electron microscopy and chemical analysis show that ultrathin manganite films start to grow with La-O layer on a strongly Mn/Ti-intermixed interface, engineered by an additional deposition of 2 u.c. of Sr-Mn-O. Such interface engineering results in a hole-doped manganite layer and stabilizes ferromagnetism and metallic conductivity down to the thickness of d = 3 u.c. The films with d = 8 u.c. demonstrate a bulk-like transport behavior with T-MI similar to T-C = 310 – 330 K. (C) 2013 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000319292800195 Publication Date 2013-03-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 7 Open Access
Notes Ifox; Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO; Approved Most recent IF: 2.068; 2013 IF: 2.185
Call Number UA @ lucian @ c:irua:109009UA @ admin @ c:irua:109009 Serial 1692
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Author Maignan, A.; Singh, K.; Simon, C.; Lebedev, O.I.; Martin, C.; Tan, H.; Verbeeck, J.; Van Tendeloo, G.
Title Magnetic and magnetodielectric properties of erbium iron garnet ceramic Type A1 Journal article
Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume (down) 113 Issue 3 Pages 033905-5
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract An Er3Fe5O12 ceramic has been sintered in oxygen atmosphere at 1400 °C for dielectric measurements. Its structural quality at room temperature has been checked by combining transmission electron microscopy and X-ray diffraction. It crystallizes in the cubic space group Ia3d with a = 12.3488(1). The dielectric permittivity ([variantgreekepsilon]′) and losses (tan δ) measurements as a function of temperature reveal the existence of two anomalies, a broad one between 110 K and 80 K, attributed to the Er3+ spin reorientation, and a second sharper feature at about 45 K associated to the appearance of irreversibility on the magnetic susceptibility curves. In contrast to the lack of magnetic field impact on [variantgreekepsilon]′ for the former anomaly, a complex magnetic field effect has been evidenced below 45 K. The isothermal [variantgreekepsilon]′(H) curves show the existence of positive magnetodielectric effect, reaching a maximum of 0.14% at 3 T and 10 K. Its magnitude decreases as H is further increased. Interestingly, for the lowest H values, a linear regime in the [variantgreekepsilon]′(H) curve is observed. From this experimental study, it is concluded that the [variantgreekepsilon]′ anomaly, starting above the compensation temperature Tc (75 K) and driven by the internal magnetic field, is not sensitive to an applied external magnetic field. Thus, below 45 K, it is the magnetic structure which is responsible for the coupling between spin and charge in this iron garnet.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000313670600042 Publication Date 2013-01-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 15 Open Access
Notes Vortex; Countatoms ECASJO_; Approved Most recent IF: 2.068; 2013 IF: 2.185
Call Number UA @ lucian @ c:irua:106182UA @ admin @ c:irua:106182 Serial 1861
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Author Verbeeck, J.; Tian, H.; Béché, A.
Title A new way of producing electron vortex probes for STEM Type A1 Journal article
Year 2012 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume (down) 113 Issue Pages 83-87
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A spiral holographic aperture is used in the condensor plane of a scanning transmission electron microscope to produce a focussed electron vortex probe carrying a topological charge of either −1, 0 or +1. The spiral aperture design has a major advantage over the previously used forked aperture in that the three beams with topological charge m=−1, 0, and 1 are not side by side in the specimen plane, but rather on top of each other, focussed at different heights. This allows us to have only one selected beam in focus on the sample while the others contribute only to a background signal. In this paper we describe the working principle as well as first experimental results demonstrating atomic resolution HAADF STEM images obtained with electron vortex probes. These results pave the way for atomic resolution magnetic information when combined with electron energy loss spectroscopy.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000300554400002 Publication Date 2011-10-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 62 Open Access
Notes J.V. wants to thank Miles Padgett for suggesting this setup and pointing to the relevant optics literature. Peter Schattschneider is acknowledged for in depth discussions on related topics. J.V acknowledges funding from the European Research Council under the 7th Framework Program (FP7), ERC Grant no. 46791-COUN-TATOMS and ERC Starting Grant no. 278510 VORTEX. The Qu-Ant-EM microscope is partially funded by the Hercules fund of the Flemish Government. ECASJO_; Approved Most recent IF: 2.843; 2012 IF: 2.470
Call Number UA @ lucian @ c:irua:93624UA @ admin @ c:irua:93624 Serial 2336
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Author Neyts, E.C.; Bogaerts, A.
Title Numerical study of the size-dependent melting mechanisms of nickel nanoclusters Type A1 Journal article
Year 2009 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume (down) 113 Issue 7 Pages 2771-2776
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Molecular dynamics simulations were used to investigate the size-dependent melting mechanism of nickel nanoclusters of various sizes. The melting process was monitored by the caloric curve, the overall cluster Lindemann index, and the atomic Lindemann index. Size-dependent melting temperatures were determined, and the correct linear dependence on inverse diameter was recovered. We found that the melting mechanism gradually changes from dynamic coexistence melting to surface melting with increasing cluster size. These findings are of importance in better understanding carbon nanotube growth by catalytic chemical vapor deposition as the phase state of the catalyst nanoparticle codetermines the growth mechanism.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited Open Access
Notes Approved Most recent IF: 4.536; 2009 IF: 4.224
Call Number UA @ lucian @ c:irua:76495 Serial 2410
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Author Huq, M.Z.; Celis, J.P.; Meneve, J.; Stals, L.; Schryvers, D.
Title Oscillating sliding wear of mono- and multilayer ceramic coatings in air Type A1 Journal article
Year 1999 Publication Surface and coatings technology Abbreviated Journal Surf Coat Tech
Volume (down) 113 Issue Pages 242-250
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000079807600007 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0257-8972; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.589 Times cited 10 Open Access
Notes Approved Most recent IF: 2.589; 1999 IF: 1.008
Call Number UA @ lucian @ c:irua:29379 Serial 2532
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Author Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M.
Title Phonon-assisted Zener tunneling in a cylindrical nanowire transistor Type A1 Journal article
Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume (down) 113 Issue 18 Pages 184507-184508
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000319294100093 Publication Date 2013-05-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 4 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. ; Approved Most recent IF: 2.068; 2013 IF: 2.185
Call Number UA @ lucian @ c:irua:109651 Serial 2599
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Author Grujić, M.M.; Tadić, M.Z.; Peeters, F.M.
Title Spin-valley filtering in strained graphene structures with artificially induced carrier mass and spin-orbit coupling Type A1 Journal article
Year 2014 Publication Physical review letters Abbreviated Journal Phys Rev Lett
Volume (down) 113 Issue 4 Pages 046601
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this Letter we show that a strain induced pseudomagnetic field in such a barrier will enforce opposite cyclotron trajectories for the filtered valleys, leading to their spatial separation. Since spin is coupled to the valley in the filtered states, this also leads to spin separation, demonstrating a spin-valley filtering effect. The filtering behavior is found to be controllable by electrical gating as well as by strain.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000339620300013 Publication Date 2014-07-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-9007;1079-7114; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 8.462 Times cited 90 Open Access
Notes ; This work was supported by the Serbian Ministry of Education, Science, and Technological Development, the Flemish Science Foundation (FWO-V1), and the Methusalem program of the Flemish government. ; Approved Most recent IF: 8.462; 2014 IF: 7.512
Call Number UA @ lucian @ c:irua:118731 Serial 3104
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Author Rykov, A.; Caignaert, V.; Van Tendeloo, G.; Greneche, J.M.; Studer, F.; Nguyen, N.; Ducouret, A.; Bonville, P.; Raveau, B.
Title Structural aspects and antiferromagnetic ordering in the “123” derivative LnSr2Cu2Ga1-xFexO7-\delta (Ln = Y, Ho) Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume (down) 113 Issue Pages 94-108
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PP02200014 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 9 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:10037 Serial 3204
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Author Zhang, X.F.; Van Tendeloo, G.; Amelinckx, S.; Pelloquin, D.; Michel, C.; Hervieu, M.; Raveau, B.
Title Structural aspects of Bi2-xPbxSr3.5Cu2(CO3)O8-\delta for 0\leq x\leq0.75 : an electron-microscopy study Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume (down) 113 Issue 2 Pages 327-344
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structure and defect structure of Bi2-xPbxSr3.5Cu2 (CO3)O8-delta compounds with 0 less-than-or-equal-to x less-than-or-equal-to 0.75 are carefully investigated by electron diffraction and high-resolution electron microscopy. All compounds have an orthorhombic structure with a almost-equal-to b almost-equal-to 5.4 angstrom and c almost-equal-to 39.5 angstrom. The length of the b-axis decreases monotonically with increasing x. The space group for the basic structure is Abm2. The structure can be considered as an intergrowth of Bi2Sr2CuO6 lamellae with Sr2CuO2 (CO3) lamellae along the c-axis. CO3 groups behave as bridges connecting the CuO6 octahedra. In the x = 0 compound the carbon atoms are shifted away from their symmetry positions; the orientational ordering of the CO3 groups (or the carbon shift) in successive CO planes alternates along +b and -b. Typical Bi-type and Pb-type modulations are found along the b-axis up to a Pb content x = 0.5. Electron beam irradiation destroys the ordering of the CO3 groups and alters the modulated structure. (C) 1994 Academic press, inc.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PX18600016 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 8 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:99810 Serial 3210
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Author Seftel, E.M.; Popovici, E.; Mertens, M.; de Witte, K.; Van Tendeloo, G.; Cool, P.; Vansant, E.F.
Title Zn-Al layered double hydroxides: synthesis, characterization and photocatalytic application Type A1 Journal article
Year 2008 Publication Microporous and mesoporous materials: zeolites, clays, carbons and related materials Abbreviated Journal Micropor Mesopor Mat
Volume (down) 113 Issue 1/3 Pages 296-304
Keywords A1 Journal article; Laboratory of adsorption and catalysis (LADCA); Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000257362100035 Publication Date 2007-12-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1387-1811; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.615 Times cited 154 Open Access
Notes Approved Most recent IF: 3.615; 2008 IF: 2.555
Call Number UA @ lucian @ c:irua:68281 Serial 3934
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Author Abdullah, H.M.; Zarenia, M.; Bahlouli, H.; Peeters, F.M.; Van Duppen, B.
Title Gate tunable layer selectivity of transport in bilayer graphene nanostructures Type A1 Journal article
Year 2016 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume (down) 113 Issue 113 Pages 17006
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Recently it was found that bilayer graphene may exhibit regions with and without van der Waals coupling between the two layers. We show that such structures can exhibit a strong layer selectivity when current flows through the coupled region and that this selectivity can be tuned by means of electrostatic gating. Analysing how this effect depends on the type of bilayer stacking, the potential on the gates and the smoothness of the boundary between the coupled and decoupled regions, we show that nearly perfect layer selectivity is achievable in these systems. This effect can be further used to realise a tunable layer switch.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000371479500024 Publication Date 2016-01-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 15 Open Access
Notes HMA and HB acknowledge the support of the Saudi Center for Theoretical Physics (SCTP) for their generous support and the support of King Fahd University of Petroleum and Minerals under physics research group projects RG1306-1 and RG01306-2. This work is supported by the Flemish Science Foundation (FWO-Vl) by a PhD grant (BVD) and a post-doctoral fellowship (MZ). Approved Most recent IF: 1.957
Call Number c:irua:131909 c:irua:131909 Serial 4037
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Author Anaf, W.; Schalm, O.; Janssens, K.; De Wael, K.
Title Understanding the (in)stability of semiconductor pigments by a thermodynamic approach Type A1 Journal article
Year 2015 Publication Dyes and pigments Abbreviated Journal Dyes Pigments
Volume (down) 113 Issue Pages 409-415
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Cultural Heritage Sciences (ARCHES)
Abstract Several artists pigments are semiconductors. Some of these materials appear stable over time, whereas others already show remarkable signs of degradation after limited time periods. The (in)stability of these pigments can be understood using a thermodynamic approach. For several pigment-related materials, the thermodynamic oxidation and reduction potential (ϕox and ϕred) were determined and evaluated considering the absolute energy positions of the valence and conduction band edges and the water redox potentials. The positions of ϕox and ϕred can be used in a fast screening of the stability of semiconductor pigments towards photoinduced corrosion in an aqueous/humid environment. This theoretical approach corresponds well with experimental data on pigment permanence and degradation phenomena found in literature.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000346543200052 Publication Date 2014-09-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0143-7208 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.473 Times cited 14 Open Access
Notes ; The authors acknowledge the funding from the Belspo S2-ART project (Belgian Federal Government) SD/RI/04A. ; Approved Most recent IF: 3.473; 2015 IF: 3.966
Call Number UA @ admin @ c:irua:118875 Serial 5885
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Author Milis, K.; Peremans, H.; Springael, J.; Van Passel, S.
Title Win-win possibilities through capacity tariffs and battery storage in microgrids Type A1 Journal article
Year 2019 Publication Renewable & Sustainable Energy Reviews Abbreviated Journal Renew Sust Energ Rev
Volume (down) 113 Issue 113 Pages 109238
Keywords A1 Journal article; Economics; Engineering sciences. Technology; Engineering Management (ENM)
Abstract This paper investigates the impact of capacity tariff design on microgrids. While the possible benefits for utilities of capacity tariffs are well researched, comparatively little work has been done investigating the effects of capacity pricing on prosumers. Through simulating a grid connected microgrid and solving the day-ahead dispatch problem for a calendar year, we show that a well-designed capacity tariff will not only smooth out demand profiles, but could also lead to less erratic charge/discharge cycles in a real-time pricing scenario, lessening battery degradation. These results show that a properly designed capacity tariff has the potential to be beneficial for both the utilities as well as the battery-owning prosumer. Furthermore, we propose a new, heuristic approach to solve the day-ahead economic dispatch problem, which we prove to be effective and efficient. Additionally, we demonstrate that our novel approach does not impose mathematical restrictions such as continuous differentiability of the objective function. We show that the proposed capacity tariff achieves the stated aim of promoting battery storage uptake and that our novel method allows for compression and shorter run times.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000483422600019 Publication Date 2019-07-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1364-0321; 1879-0690 ISBN Additional Links UA library record; WoS full record
Impact Factor 8.05 Times cited 1 Open Access
Notes ; ; Approved Most recent IF: 8.05
Call Number UA @ admin @ c:irua:160566 Serial 6279
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Author Li, T.; Piltz, B.; Podola, B.; Dron, A.; de Beer, D.; Melkonian, M.
Title Microscale profiling of photosynthesis-related variables in a highly productive biofilm photobioreactor Type A1 Journal article
Year 2016 Publication Biotechnology and bioengineering Abbreviated Journal
Volume (down) 113 Issue 5 Pages 1046-1055
Keywords A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
Abstract In the present study depth profiles of light, oxygen, pH and photosynthetic performance in an artificial biofilm of the green alga Halochlorella rubescens in a porous substrate photobioreactor (PSBR) were recorded with microsensors. Biofilms were exposed to different light intensities (50-1,000mol photons m(-2) s(-1)) and CO2 levels (0.04-5% v/v in air). The distribution of photosynthetically active radiation showed almost identical trends for different surface irradiances, namely: a relatively fast drop to a depth of about 250 mu m, (to 5% of the incident), followed by a slower decrease. Light penetrated into the biofilm deeper than the Lambert-Beer Law predicted, which may be attributed to forward scattering of light, thus improving the overall light availability. Oxygen concentration profiles showed maxima at a depth between 50 and 150m, depending on the incident light intensity. A very fast gas exchange was observed at the biofilm surface. The highest oxygen concentration of 3.2mM was measured with 1,000mol photons m(-2) s(-1) and 5% supplementary CO2. Photosynthetic productivity increased with light intensity and/or CO2 concentration and was always highest at the biofilm surface; the stimulating effect of elevated CO2 concentration in the gas phase on photosynthesis was enhanced by higher light intensities. The dissolved inorganic carbon concentration profiles suggest that the availability of the dissolved free CO2 has the strongest impact on photosynthetic productivity. The results suggest that dark respiration could explain previously observed decrease in growth rate over cultivation time in this type of PSBR. Our results represent a basis for understanding the complex dynamics of environmental variables and metabolic processes in artificial phototrophic biofilms exposed to a gas phase and can be used to improve the design and operational parameters of PSBRs. Biotechnol. Bioeng. 2016;113: 1046-1055. (c) 2015 Wiley Periodicals, Inc.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000373476700013 Publication Date 2015-10-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0006-3592 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:133255 Serial 8248
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Author Chwiej, T.; Bednarek, S.; Adamowski, J.; Szafran, B.; Peeters, F.M.
Title Coulomb-interaction driven anomaly in the Stark effect for an exciton in vertically coupled quantum dots Type A1 Journal article
Year 2005 Publication Journal of luminescence T2 – 6th International Conference on Excitonic Processes in Condensed Matter, (EXCON 04), JUL 06-09, 2004, Cracow, POLAND Abbreviated Journal J Lumin
Volume (down) 112 Issue 1-4 Pages 122-126
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The effect of the electric field on an exciton confined in a pair of vertically coupled quantum dots is studied. We use a single-band approximation and a parabolic model potential. As a result of these idealizations, we obtain a numerically solvable model, which is used to describe the influence of the electron-hole interaction on the Stark effect for the lowest-energy photo luminescence lines. We show that for intermediate tunnel coupling between the dots this interaction leads to an anomalous Stark effect with an essential deviation of the recombination energy from the usual quadratic dependence on the electric field. (c) 2004 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000228439600029 Publication Date 2004-12-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2313; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.686 Times cited 10 Open Access
Notes Approved Most recent IF: 2.686; 2005 IF: 1.518
Call Number UA @ lucian @ c:irua:103675 Serial 532
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Author Schryvers, D.; Potapov, P.
Title Electron diffraction refinement of the TiNi(Fe) R-phase structure Type A1 Journal article
Year 2003 Publication Journal de physique Abbreviated Journal J Phys Iv
Volume (down) 112 Issue Pages 751-754
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Paris Editor
Language Wos 000186503400030 Publication Date 2008-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:48389 Serial 922
Permanent link to this record
 

 
Author Burriel, M.; Santiso, J.; Rossell, M.D.; Van Tendeloo, G.; Figueras, A.; Garcia, G.
Title Enhancing total conductivity of La2NiO4+\delta epitaxial thin films by reducing thickness Type A1 Journal article
Year 2008 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume (down) 112 Issue 29 Pages 10982-10987
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High quality epitaxial c axis oriented La2NiO4+ä thin films have been prepared by the pulsed injection metal organic chemical vapor deposition technique on different substrates. High-resolution electron microscopy/transmission electron microscopy has been used to confirm the high crystalline quality of the deposited films. The c-parameter evolution has been studied by XRD as a function of time and gas atmosphere. The high temperature transport properties along the basal a−b plane of epitaxial La2NiO4+ä films have been measured, and the total conductivity of the layers has been found to increase as the thickness is reduced. Layers of 50 nm and thinner have shown a maximum conductivity larger than that measured for single-crystals, in particular, the 33 nm thick films with a conductivity of 475 S/cm in oxygen correspond to the highest value measured to date for this material.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000257724100057 Publication Date 2008-06-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited 35 Open Access
Notes Approved Most recent IF: 4.536; 2008 IF: 3.396
Call Number UA @ lucian @ c:irua:76440 Serial 1067
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Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
Title Ion beam synthesis of β-SiC at 9500C and structural characterization Type A3 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal
Volume (down) B112 Issue Pages 325-329
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-5087 ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15454 Serial 1740
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B
Volume (down) 112 Issue 1-4 Pages 325-329
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Address
Corporate Author Thesis
Publisher Elsevier science bv Place of Publication Amsterdam Editor
Language Wos A1996UW20100069 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95886 Serial 1742
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Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L.
Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B
Volume (down) B112 Issue Pages 133-138
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996UW20100029 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 4 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15453 Serial 2423
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Author Somsen, C.; Wassermann, E.F.; Kästner, J.; Schryvers, D.
Title Precursor phenomena in a quenched and aged Ni52Ti48 shape memory alloy Type A1 Journal article
Year 2003 Publication Journal de physique: 4 T2 – 10th International Conference on Martensitic Transformations, JUN 10-14, 2002, ESPOO, FINLAND Abbreviated Journal J Phys Iv
Volume (down) 112 Issue Part 2 Pages 777-780
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We measured the electrical resistivity R(T) and specific heat C-p(T) between room temperature (RT) and 4.2 K as well as the microstructure by transmission electron microscopy (TEM) of a Ni-52 Ti-48 SMA quenched from 1000degreesC (B2-Phase range) to RT and then annealed for 1h at T=380degreesC, 550degreesC and 650degreesC. In the “as quenched” and the “650degreesC annealed” state no martensitic transformations (MT's) occur. The diffraction patterns show faint reflections originating from coherent Ni4Ti3 precipitates in an early state of formation. Additional reflections of the type 1/2 <110>, 1/2 <111> and 1/3 <110> result from various lattice displacement waves, which are precursors of the MT's to the B19' and R-phase, respectively. Indeed, high resolution TEM micrographs of the [001] zone of the “as quenched” sample reveal transverse 1/2 <110> <110> lattice displacement waves, precursors of the B19' martensite. The coherent Ni4Ti3 precipitates, homogeneously distributed on a small length scale, binder the MT's in the “as quenched” and the “650degreesC annealed” state, and thus only the precursors appear. When annealed at T=380degreesC, however, coherent Ni4Ti3 precipitates with a length of 10nm are clearly visible in TEM. These precipitates trigger the NIT from the B2 to the R-phase on cooling, as evidenced also by anomalies in R(T) and C-p(T). Annealing at T-550degreesC leads to the well known two step MT's from the B2 to the R-phase and then into the B19'-phase. These martensitic transitions are clearly seen as additional peaks in the specific heat and anomalies in the resistance, while the “as quenched” and 650degreesC annealed samples show weak features in R(T) and C-p(T).
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor
Language Wos 000186503400036 Publication Date 2008-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:102791 Serial 2694
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Author Van Tendeloo, G.; Domengès, B.; Caldes, M.T.; Hervieu, M.; Raveau, B.
Title Structural aspects of Li-doped tubular bismuth cuprates (Bi2Sr3Cu2-xLixOy): an electron microscopy study Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume (down) 112 Issue Pages 161-169
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PG30500027 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record;
Impact Factor 2.133 Times cited Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:10033 Serial 3208
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Author Hervieu, M.; Pelloquin, D.; Michel, C.; Van Tendeloo, G.; Raveau, B.
Title Structural characteristics of the 40K superconductor Bi2Sr5Cu3(CO3)2O10: a HREM study Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume (down) 112 Issue Pages 139-147
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PG30500024 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 5 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:10034 Serial 3216
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Author Ball, J.M.; Schryvers, D.
Title The analysis of macrotwins in NiAl martensite Type A1 Journal article
Year 2003 Publication Journal de physique: 4 T2 – 10th International Conference on Martensitic Transformations, JUN 10-14, 2002, ESPOO, FINLAND Abbreviated Journal J Phys Iv
Volume (down) 112 Issue Part 1 Pages 159-162
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We present a theoretical study of macrotwins arising in cubic to tetragonal martensitic transformations. The results help to explain some features of such macrotwins observed in Ni65Al35.
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor
Language Wos 000186503200024 Publication Date 2008-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 11 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103275 Serial 3569
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Author de Sousa, J.S.; Covaci, L.; Peeters, F.M.; Farias, G.A.
Title Time-dependent investigation of charge injection in a quantum dot containing one electron Type A1 Journal article
Year 2012 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume (down) 112 Issue 9 Pages 093705-93709
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The interaction of an injected electron towards a quantum dot (QD) containing a single confined electron is investigated using a flexible time-dependent quantum mechanics formalism, which allows both electrons to move and undergo quantum transitions. Different scenarios combining quantum dot dimensions, dielectric constant, injected wave packet energy, and width were explored, and our main results are: (i) due to the large characteristic transitions times between the confined state in the quantum dot and the delocalized state in the continuum, it is relatively difficult to ionize the occupied QD by Coulomb interaction solely and (ii) the charging state of the quantum dot can be sensed by direct injection of charges. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759292]
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000311968400052 Publication Date 2012-11-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 1 Open Access
Notes ; This work was financially supported by the Brazilian National Research Council (CNPq), under Contract No. NanoBioEstruturas 555183/2005-0, Fundao Cearense de Apoio ao Desenvolvimento Cientfico e Tecnolgico (Funcap), CAPES, Pronex/CNPq/ Funcap, the Bilateral program between Flanders and Brazil, and the Flemish Science Foundation (FWO). ; Approved Most recent IF: 2.068; 2012 IF: 2.210
Call Number UA @ lucian @ c:irua:106014 Serial 3664
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Author Ji, G.; Tan, Z.; Lu, Y.; Schryvers, D.; Li, Z.; Zhang, D.
Title Heterogeneous interfacial chemical nature and bonds in a W-coated diamond/Al composite Type A1 Journal article
Year 2016 Publication Materials characterization Abbreviated Journal Mater Charact
Volume (down) 112 Issue 112 Pages 129-133
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Heterogeneous Al/Al4C3/Al2O3/diamond{111}, Al/nanolayered Al4C3/diamond{111} and Al12W particle/Al4C3/Al2O3/diamond{111} multi-interfaces have been developed at the nanoscale in a W-coated diamond/Al composite produced by vacuum hot pressing. The formation of nanoscale Al4C3 crystals is strongly associated with local O enrichment and can be further promoted by Al12W interfacial particles. The latter effectively contributes to enhance interfacial chemical bonding reducing interfacial thermal resistance and, in turn, enhancing thermal conductivity.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000370109200015 Publication Date 2015-12-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1044-5803 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.714 Times cited 7 Open Access
Notes This work is financially supported by the FWO project of Belgium (No. U2 FA 070100/3506), the travel funding BQR (No. R8DIV AUE) provided by Université Lille 1, the National Natural Science Foundation of China (Grant No. 51401123) and the China Postdoctoral Science Foundation (Grant No. 2014 M561469) for Dr. Z.Q. Tan. Dr. W.G. Grünewald (LeicaMicrosystems, Germany) is also thanked for the assistance of surface preparation. Approved Most recent IF: 2.714
Call Number c:irua:129976 Serial 3987
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Author Yan, L.; Tan, Z.; Ji, G.; Li, Z.; Fan, G.; Schryvers, D.; Shan, A.; Zhang, D.
Title A quantitative method to characterize the Al4C3-formed interfacial reaction: the case study of MWCNT/Al composites Type A1 Journal article
Year 2015 Publication Materials characterization Abbreviated Journal Mater Charact
Volume (down) 112 Issue 112 Pages 213-218
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The Al4C3-formed interfacial reaction plays an important role in tuning the mechanical and thermal properties of carbon/aluminum (C/Al) composites reinforced with carbonaceous materials such as multi-wall carbon nanotube (MWCNT) and graphene nanosheet. In terms of the hydrolysis nature of Al4C3, an electrochemical dissolution method was developed to quantitatively characterize the extent of C/Al interfacial reaction, which involves dissolving the composite samples in alkaline solution first, then collecting and measuring the CH4 gas released by Al4C3 hydrolysis with a gas chromatograph. Through a case study with powder metallurgy fabricated 2.0 wt.% MWCNT/Al composites, the detectability limit of the proposed method is 0.4 wt.% Al4C3, corresponding to 5 % extent of interfacial reaction with a measurement error of ±3 %. And then, with the already known MWCNT/Al reaction extent vs different sintering temperature and time, the reaction kinetics with an activation energy of 281 kJ mol-1 was successfully derived. Therefore, this rapid, sensitive, accurate method supplies an useful tool to optimize the processing and properties of all kinds of C/Al composites via interface design/control.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000370109200026 Publication Date 2015-12-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1044-5803 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.714 Times cited 24 Open Access
Notes The authors would like to acknowledge the financial support of the National Basic Research Program of China (973 Program, No. 2012CB619600), the National High-Tech R&D Program (863 Program, No. 2012AA030611), the National Natural Science Foundation (Nos. 51071100, 51131004, 51401123, 51511130038) and the research grant (Nos. 14DZ2261200, 15JC1402100, 14520710100) from Shanghai government. Dr. Z.Q. Tan would also like to thank the project funded by the China Postdoctoral Science Foundation (No. 2014M561469). The research leading to these results has partially received funding from the European Union Seventh Framework Program under Grant Agreement 312483 – ESTEEM2 (Integrated Infrastructure Initiative – I3).; esteem2_jra2 Approved Most recent IF: 2.714; 2015 IF: 1.845
Call Number c:irua:130066 c:irua:130066 Serial 3997
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Author Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L.
Title Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy Type A1 Journal article
Year 2012 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume (down) 112 Issue Pages 124505
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000312829400128 Publication Date 2012-12-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 14 Open Access
Notes Approved Most recent IF: 3.411; 2012 IF: 3.794
Call Number UA @ lucian @ c:irua:136433 Serial 4510
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Author Abdullah, H.M.; Van der Donck, M.; Bahlouli, H.; Peeters, F.M.; Van Duppen, B.
Title Graphene quantum blisters : a tunable system to confine charge carriers Type A1 Journal article
Year 2018 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume (down) 112 Issue 21 Pages 213101
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine charge carriers. Here, we propose that bilayer graphene with a local region of decoupled graphene layers is able to generate bound states under the application of an electrostatic gate. The discrete energy levels in such a quantum blister correspond to localized electron and hole states in the top and bottom layers. We find that this layer localization and the energy spectrum itself are tunable by a global electrostatic gate and that the latter also coincides with the electronic modes in a graphene disk. Curiously, states with energy close to the continuum exist primarily in the classically forbidden region outside the domain defining the blister. The results are robust against variations in size and shape of the blister which shows that it is a versatile system to achieve tunable electrostatic confinement in graphene. Published by AIP Publishing.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000433140900025 Publication Date 2018-05-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 9 Open Access
Notes ; H.M.A. and H.B. acknowledge the Saudi Center for Theoretical Physics (SCTP) for their generous support and the support of KFUPM under physics research group Project Nos. RG1502-1 and RG1502-2. This work was supported by the Flemish Science Foundation (FWO-Vl) by a post-doctoral fellowship (B.V.D.) and a doctoral fellowship (M.V.d.D.). ; Approved Most recent IF: 3.411
Call Number UA @ lucian @ c:irua:151505UA @ admin @ c:irua:151505 Serial 5027
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Author Kong, X.; Li, L.; Peeters, F.M.
Title Topological Dirac semimetal phase in <tex> $GexSny alloys Type A1 Journal article
Year 2018 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume (down) 112 Issue 25 Pages 251601
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Recently, two stable allotropes (germancite and stancite) for the group IV elements (Ge and Sn) with a staggered layered dumbell structure were proposed to be three-dimensional (3D) topological Dirac semimetals [Phys. Rev. B 93, 241117 (2016)]. A pair of Dirac points is on the rotation axis away from the time-reversal invariant momentum, and the stability of the 3D bulk Dirac points is protected by the C-3 rotation symmetry. Here, we use the first principles calculations to investigate GexSny alloys which share the same rhombohedral crystal structure with the space group of D-3d(6). Six GexSny alloys are predicted to be energetically and dynamically stable, where (x, y) = (8, 6) and (6, 8) and the alpha and beta phases of (10, 4) and (4, 10). Our results demonstrate that all the six GexSny alloys are topological Dirac semimetals. The different nontrivial surface states and surface Fermi arcs are identified. Our work will substantially enrich the family of 3D Dirac semimetals which are within the reach of experimental realization. Published by AIP Publishing.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000435987400013 Publication Date 2018-06-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 8 Open Access
Notes ; This work was supported by the Collaborative Innovation Center of Quantum Matter, the Fonds voor Wetenschappelijk Onderzoek (FWO-VI), and the FLAG-ERA Project TRANS 2D TMD. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government – department EWI, and the National Supercomputing Center in Tianjin, funded by the Collaborative Innovation Center of Quantum Matter. ; Approved Most recent IF: 3.411
Call Number UA @ lucian @ c:irua:151970UA @ admin @ c:irua:151970 Serial 5045
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