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Author | Béché, A.; Rouvière, J.L.; Barnes, J.P.; Cooper, D. | ||||
Title | Dark field electron holography for strain measurement | Type | A1 Journal article | ||
Year | 2011 | Publication | Ultramicroscopy | Abbreviated Journal | Ultramicroscopy |
Volume | 111 | Issue | 3 | Pages | 227-238 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | Dark field electron holography is a new TEM-based technique for measuring strain with nanometer scale resolution. Here we present the procedure to align a transmission electron microscope and obtain dark field holograms as well as the theoretical background necessary to reconstruct strain maps from holograms. A series of experimental parameters such as biprism voltage, sample thickness, exposure time, tilt angle and choice of diffracted beam are then investigated on a silicon-germanium layer epitaxially embedded in a silicon matrix in order to obtain optimal dark field holograms over a large field of view with good spatial resolution and strain sensitivity. | ||||
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Corporate Author | Thesis | ||||
Publisher | Place of Publication | Amsterdam | Editor | ||
Language | Wos | 000288638200007 | Publication Date | 2010-12-01 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0304-3991 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.843 | Times cited | 31 | Open Access | |
Notes | Approved | Most recent IF: 2.843; 2011 IF: 2.471 | |||
Call Number | UA @ lucian @ c:irua:136368 | Serial | 4496 | ||
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