toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
 |   | 
Details
   print
  Records Links (down)
Author Matulis, A.; Zarenia, M.; Peeters, F.M. pdf  doi
openurl 
  Title Wave fronts and packets in 1D models of different meta-materials : graphene, left-handed media and transmission line Type A1 Journal article
  Year 2015 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 252 Issue 252 Pages 2330-2338  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A comparative study is made of the propagation of wave packets and fronts in three different meta-media, i.e. graphene, left-handed media (LHM) and transmission lines, using one-dimensional models. It is shown that a potential step in graphene influences only the frequency of the electronic wave, i.e., the particular spectrum branch (electron or hole) to which the wave belongs to, while the envelop function (the wave front or packet form) remains unchanged. Although the model for a vacuum and LHM interface is similar to that of the potential step in graphene, the solutions are quite different due to differences in the chirality of the waves. Comparing the propagation of wave fronts and packets in a standard transmission line and its meta-analog we demonstrate that the propagating packets in the meta-line are much more deformed as compared to the standard one, including broadening, asymmetry and even the appearance of fast moving precursors. This influence is seen not only in the case of packets with steep fronts but in soft Gaussian packets as well.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000362722300025 Publication Date 2015-07-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 1 Open Access  
  Notes ; This work was financially supported by the Flemish Science Foundation (FWO-Vl), the Methusalem foundation of the Flemish government, and the European Social Fund under the Global Grant Measure (Grant No. VP1-3.1-SMM-07-K-02-046). ; Approved Most recent IF: 1.674; 2015 IF: 1.489  
  Call Number UA @ lucian @ c:irua:128776 Serial 4277  
Permanent link to this record
 

 
Author Lu, J.; Martinez, G.T.; Van Aert, S.; Schryvers, D. pdf  doi
openurl 
  Title Lattice deformations in quasi-dynamic strain glass visualised and quantified by aberration corrected electron microscopy Type A1 Journal article
  Year 2014 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 251 Issue 10 Pages 2034-2040  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Advanced transmission electron microscopy and statistical parameter estimated quantification procedures were applied to study the room temperature quasi-dynamical strain glass state in NiTi alloys. Nanosized strain pockets are visualised and the displacements of the atom columns are quantified. A comparison is made with conventional high-resolution transmission electron microscopy images of point defect induced strains in NiAl alloys.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000344360000009 Publication Date 2014-03-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 2 Open Access  
  Notes Fwo Approved Most recent IF: 1.674; 2014 IF: 1.489  
  Call Number UA @ lucian @ c:irua:120471 Serial 1801  
Permanent link to this record
 

 
Author Idrissi, H.; Amin-Ahmadi, B.; Wang, B.; Schryvers, D. pdf  doi
openurl 
  Title Review on TEM analysis of growth twins in nanocrystalline palladium thin films : toward better understanding of twin-related mechanisms in high stacking fault energy metals Type A1 Journal article
  Year 2014 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 251 Issue 6 Pages 1111-1124  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Various modes of transmission electron microscopy including aberration corrected imaging were used in order to unravel the fundamental mechanisms controlling the formation of growth twins and the evolution of twin boundaries under mechanical and hydrogen loading modes in nanocrystalline (nc) palladium thin films. The latter were produced by electron-beam evaporation and sputter deposition and subjected to uniaxial tensile deformation as well as hydriding/dehydriding cycles. The results show that the twins form by dissociation of grain boundaries. The coherency of Σ3{111} coherent twin boundaries considerably decreases with deformation due to dislocation/twin boundary interactions while Σ3{112} incoherent twin boundaries dissociate under hydrogen cycling into two-phase boundaries bounding a new and unstable 9R phase. The effect of these elementary mechanisms on the macroscopic behavior of the palladium films is discussed and compared to recent experimental and simulation works in the literature. The results provide insightful information to guide the production of well-controlled population of growth twins in high stacking fault energy nc metallic thin films. The results also indicate directions for further enhancement of the mechanical properties of palladium films as needed for instance in palladium-based membranes in hydrogen applications.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000337608600001 Publication Date 2014-02-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 7 Open Access  
  Notes Iap P7/21; Fwo G012012n Approved Most recent IF: 1.674; 2014 IF: 1.489  
  Call Number UA @ lucian @ c:irua:114580 Serial 2905  
Permanent link to this record
 

 
Author Michel, K.H.; Verberck, B. pdf  doi
openurl 
  Title Rigid-plane phonons in layered crystals Type A1 Journal article
  Year 2012 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 249 Issue 12 Pages 2604-2607  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The determination of the layer number ${\cal N}$ in nanoscale thin layered crystals is a challenging problem of technological relevance. In addition to innovative experimental techniques, a thorough knowledge of the underlying lattice dynamics is required. Starting from phenomenological atomic interaction potentials we have carried out an analytical study of the low-frequency optical phonon dispersions in layered crystals. At the gamma point of the two-dimensional Brillouin zone the optical phonon frequencies correspond to rigid-plane shearing and compression modes. We have investigated graphene multilayers (GML) and hexagonal boron-nitride multilayers (BNML). The frequencies show a characteristic dependence on ${\cal N}$. The results which are represented in the form of fan diagrams are very similar for both materials. Due to charge neutrality within layers Coulomb forces play no role, only van der Waals forces between nearest neighbor layers are relevant. The theoretical results agree with recent low-frequency Raman results on rigid-layer modes [Tan et al., Nature Mater. 11, 294 (2012)] in GML and double-resonant Raman scattering data on rigid-layer compression modes [Herziger et al., Phys. Rev. B 85, 235447 (2012)] in GML. (C) 2012 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000312215300072 Publication Date 2012-11-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 1 Open Access  
  Notes ; This work has been supported by the Flemish Science Foundation (FWO-Vl) and the Bijzonder Onderzoeksfonds, Universiteit Antwerpen (BOF-UA). ; Approved Most recent IF: 1.674; 2012 IF: 1.489  
  Call Number UA @ lucian @ c:irua:105992 Serial 2907  
Permanent link to this record
 

 
Author Michel, K.H.; Verberck, B. pdf  doi
openurl 
  Title Theory of phonon dispersions and piezoelectricity in multilayers of hexagonal boron-nitride Type A1 Journal article
  Year 2011 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 248 Issue 11 Pages 2720-2723  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Taking into account covalent, Coulomb and van der Waals interactions, we construct the dynamical matrix and calculate the phonon dispersion relations for multilayer crystals of hexagonal boron-nitride. Coulomb interactions account for a strong overbending of optical phonons. Applying and extending Born's long-wave theory to the case of multilayer crystals, we calculate the piezoelectric stress constant equation image as a function of the number of layers equation image. In agreement with group theory, we find that equation image for equation image even; for an uneven number equation image of layers we obtain equation image, i.e. the piezoelectric constant decreases as equation image.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000297517100069 Publication Date 2011-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 13 Open Access  
  Notes ; Discussions with G. Heger, B. Partoens and F. M. Peeters are gratefully acknowledged. This work has been supported by the Flemish Science Foundation (FWO-Vl) and the Bijzonder Onderzoeksfonds, Universiteit Antwerpen (BOF-UA). ; Approved Most recent IF: 1.674; 2011 IF: 1.316  
  Call Number UA @ lucian @ c:irua:94034 Serial 3618  
Permanent link to this record
 

 
Author Michel, K.H.; Verberck, B. doi  openurl
  Title Theoretical phonon dispersions in monolayers and multilayers of hexagonal boron-nitride Type A1 Journal article
  Year 2009 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 246 Issue 11/12 Pages 2802-2805  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Starting from an empirical force constant model of valence interactions and calculating by Ewald's method the electrostatic force constants, we derive the dynamical matrix for a monolayer and for multilayer systems of hexagonal boron nitride (h-BN). Solution of the secular problem leads to the corresponding phonon dispersion relations. The interplay between valence forces and Coulomb forces is discussed. A comparison with previous results on graphene and graphene multilayers is made. Our spectra on the h-BN monolayer are rather similar to previous ab initio theory results. Comparison is also made with Raman and infrared experimental results.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000272904100091 Publication Date 2009-11-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.674; 2009 IF: 1.150  
  Call Number UA @ lucian @ c:irua:80673 Serial 3609  
Permanent link to this record
 

 
Author Michel, K.H.; Verberck, B. doi  openurl
  Title Theory of the elastic constants of graphite and graphene Type A1 Journal article
  Year 2008 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 245 Issue 10 Pages 2177-2180  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Born's long wave method is used to study the elastic properties of graphite and graphene. Starting from an empirical force constant model derived from full inplane phonon dispersions of graphite [Mohr et al., Phys. Rev. B 76, 035439 (2007)] we calculate the tension coefficients of graphene. Extending the model by interplanar interactions, we calculate the elastic constants of graphite. The agreement of our theoretical values with inelastic x-ray scattering results on elastic constants of graphite [Bosak et al., Phys. Rev. B 75, 153408 (2007)] is very satisfactory.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000260581800066 Publication Date 2008-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 47 Open Access  
  Notes Approved Most recent IF: 1.674; 2008 IF: 1.166  
  Call Number UA @ lucian @ c:irua:75660 Serial 3621  
Permanent link to this record
 

 
Author Brosens, F.; Magnus, W. doi  openurl
  Title Carrier transport in nanodevices: revisiting the Boltzmann and Wigner distribution functions Type A1 Journal article
  Year 2009 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 246 Issue 7 Pages 1656-1661  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract In principle, transport of charged carriers in nanometer sized solid-state devices can be fully characterized once the non-equilibrium distribution function describing the carrier ensemble is known. In this light, we have revisited the Boltzmann and the Wigner distribution functions and the framework in which they emerge from the classical respectively quantum mechanical Liouville equation. We have assessed the method of the characteristic curves as a potential workhorse to solve the time dependent Boltzmann equation for carriers propagating through spatially non-uniform systems, such as nanodevices. In order to validate the proposed solution strategy, we numerically solve the Boltzmann equation for a one-dimensional conductor mimicking the basic features of a biased low-dimensional transistor operating in the on-state. Finally, we propose a computational scheme capable of extending the benefits of the above mentioned solution strategy when it comes to solve the Wigner-Liouville equation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000268659100033 Publication Date 2009-04-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.674; 2009 IF: 1.150  
  Call Number UA @ lucian @ c:irua:77953 Serial 284  
Permanent link to this record
 

 
Author Verberck, B.; Michel, K.H. doi  openurl
  Title Anisotropic packing of C-70 molecules in carbon nanotubes Type A1 Journal article
  Year 2007 Publication Physica status solidi B-basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 244 Issue 11 Pages 4279-4282  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000251355800092 Publication Date 2007-10-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.674 Times cited Open Access  
  Notes Approved Most recent IF: 1.674; 2007 IF: 1.071  
  Call Number UA @ lucian @ c:irua:67350 Serial 128  
Permanent link to this record
 

 
Author Krugel, A.; Axt, V.M.; Kuhn, T.; Vagov, A.; Peeters, F.M. doi  openurl
  Title Coherent nonlinear optical response of excitons and biexcitons in quantum dots coupled to phonons Type A1 Journal article
  Year 2006 Publication Physica status solidi B – basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 243 Issue 10 Pages 2241-2246  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000239932300006 Publication Date 2006-08-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.674; 2006 IF: 0.967  
  Call Number UA @ lucian @ c:irua:60892 Serial 380  
Permanent link to this record
 

 
Author Vagov, A.; Croitoru, M.D.; Axt, V.M.; Kuhn, T.; Peeters, F.M. doi  openurl
  Title High pulse area undamping of Rabi oscillations in quantum dots coupled to phonons Type A1 Journal article
  Year 2006 Publication Physica status solidi B – Basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 243 Issue 10 Pages 2233-2240  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000239932300005 Publication Date 2006-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 16 Open Access  
  Notes Approved Most recent IF: 1.674; 2006 IF: 0.967  
  Call Number UA @ lucian @ c:irua:60891 Serial 1440  
Permanent link to this record
 

 
Author Papp, G.; Borza, S.; Peeters, F.M. doi  openurl
  Title Spin transport through a ZnSe-based diluted magnetic semiconductor resonant tunneling structure in the presence of electric and magnetic fields Type A1 Journal article
  Year 2006 Publication Physica status solidi B: basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 243 Issue 8 Pages 1956-1962  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000239100800035 Publication Date 2006-06-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.674; 2006 IF: 0.967  
  Call Number UA @ lucian @ c:irua:60563 Serial 3103  
Permanent link to this record
 

 
Author Papp, G.; Peeters, F.M. doi  openurl
  Title Comment on “Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure” [phys. stat. sol. (b) 235, No. 1, 157-161 (2003)] Type A1 Journal article
  Year 2004 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 241 Issue 1 Pages 222-223  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We point out that the predicted strong spin-injection effect by Jiang and Jalil [phys. stat. sol. (b) 235, 157 (2003)] for a double magnetic barrier structure is based on a wrong calculation of the transmission probability. We corrected the result and found no significant spin-injection.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000188585200028 Publication Date 2003-12-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 11 Open Access  
  Notes Approved Most recent IF: 1.674; 2004 IF: 0.982  
  Call Number UA @ lucian @ c:irua:103257 Serial 413  
Permanent link to this record
 

 
Author van Rossum, M.; Schoenmaker, W.; Magnus, W.; de Meyer, K.; Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T. doi  openurl
  Title Moore's law: new playground for quantum physics Type A1 Journal article
  Year 2003 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 237 Issue Pages 426-432  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000182801800041 Publication Date 2003-04-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 2 Open Access  
  Notes Approved Most recent IF: 1.674; 2003 IF: 0.987  
  Call Number UA @ lucian @ c:irua:44284 Serial 2202  
Permanent link to this record
 

 
Author Pokatilov, E.P.; Croitoru, M.D.; Fomin, V.M.; Devreese, J.T. doi  openurl
  Title Bipolaron stability in an ellipsoidal potential well Type A1 Journal article
  Year 2003 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 237 Issue Pages 244-251  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000182801800022 Publication Date 2003-04-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 7 Open Access  
  Notes Approved Most recent IF: 1.674; 2003 IF: 0.987  
  Call Number UA @ lucian @ c:irua:44283 Serial 243  
Permanent link to this record
 

 
Author Vanhellemont, J.; Claeys, C.; van Landuyt, J. pdf  doi
openurl 
  Title In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces Type A1 Journal article
  Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 150 Issue Pages 497-506  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1995RQ21500043 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 6 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13293 Serial 1582  
Permanent link to this record
 

 
Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J. pdf  doi
openurl 
  Title Modification of the multislice method for calculating coherent STEM images Type A1 Journal article
  Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 150 Issue Pages 13-22  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1995RQ21500002 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 5 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13292 Serial 2159  
Permanent link to this record
 

 
Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Cros, C. pdf  doi
openurl 
  Title Atomic imaging of cage like structures of silicon Type A1 Journal article
  Year 1994 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 146 Issue Pages 119-132  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1994PV89500010 Publication Date 2007-01-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 12 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10043 Serial 167  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. pdf  doi
openurl 
  Title Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals Type A1 Journal article
  Year 1994 Publication Physica status solidi: A Abbreviated Journal  
  Volume 143 Issue 2 Pages 277-287  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1994NW15300010 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:99870 Serial 919  
Permanent link to this record
 

 
Author Luyten, W.; Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Férauge, C.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. doi  openurl
  Title Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy Type A1 Journal article
  Year 1993 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 140 Issue 2 Pages 453-462  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1993MP79700015 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:6156 Serial 946  
Permanent link to this record
 

 
Author Volkov, V.V.; Luyten, W.; van Landuyt, J.; Férauge, C.; Oksenoid, K.G.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. pdf  doi
openurl 
  Title Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy Type A1 Journal article
  Year 1993 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 140 Issue Pages 73-85  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1993MM00800004 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:6159 Serial 945  
Permanent link to this record
 

 
Author Amelinckx, S.; van Heurck, C.; van Dyck, D.; Van Tendeloo, G. pdf  doi
openurl 
  Title A peculiar diffraction effect in FCC crystals of C60 Type A1 Journal article
  Year 1992 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 131 Issue Pages 589-604  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1992JE20400030 Publication Date 2007-01-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 13 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:4371 Serial 2568  
Permanent link to this record
 

 
Author Garud, S.; Gampa, N.; Allen, T.G.; Kotipalli, R.; Flandre, D.; Batuk, M.; Hadermann, J.; Meuris, M.; Poortmans, J.; Smets, A.; Vermang, B. doi  openurl
  Title Surface passivation of CIGS solar cells using gallium oxide Type A1 Journal article
  Year 2018 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 215 Issue 7 Pages 1700826  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000430128500015 Publication Date 2018-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 8 Open Access Not_Open_Access  
  Notes ; The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements. ; Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:150761 Serial 4981  
Permanent link to this record
 

 
Author de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. pdf  doi
openurl 
  Title Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects Type A1 Journal article
  Year 2017 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 214 Issue 6 Pages 1600889  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The amorphous oxide semiconductor Indium-Gallium-Zinc-Oxide (a-IGZO) has gained a large technological relevance as a semiconductor for thin-film transistors in active-matrix displays. Yet, major questions remain unanswered regarding the atomic origin of threshold voltage control, doping level, hysteresis, negative bias stress (NBS), and negative bias illumination stress (NBIS). We undertake a systematic study of the effects of oxygen vacancies on the properties of a-IGZO by relating experimental observations to microscopic insights gained from first-principle simulations. It is found that the amorphous nature of the semiconductor allows unusually large atomic relaxations. In some cases, oxygen vacancies are found to behave as perfect shallow donors without the formation of structural defects. Once structural defects are formed, their transition states can vary upon charge and discharge cycles. We associate this phenomenon to a possible presence of hysteresis in the transfer curve of the devices. Under NBS, the creation of oxygen vacancies becomes energetically very stable, hence thermodynamically very likely. This generation process is correlated with the occurrence of the negative bias stress instabilities observed in a-IGZO transistors. While oxygen vacancies can therefore be related to NBS and hysteresis, it appears unlikely from our results that they are direct causes of NBIS, contrary to common belief.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000403339900012 Publication Date 2017-03-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 8 Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:144219 Serial 4678  
Permanent link to this record
 

 
Author Sankaran, K.J.; Hoang, D.Q.; Srinivasu, K.; Korneychuk, S.; Turner, S.; Drijkoningen, S.; Pobedinskas, P.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K. pdf  doi
openurl 
  Title Type A1 Journal article
  Year 2016 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 213 Issue 10 Pages 2654-2661  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000388321500017 Publication Date 2016-09-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 5 Open Access  
  Notes The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects G.0456.12 and G.0044.13N, the Methusalem “NANO” network. K. J. Sankaran, P. Pobedinskas, and S. Turner are FWO Postdoctoral Fellows of the Research Foundations Flanders (FWO). Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:144644UA @ admin @ c:irua:144644 Serial 4655  
Permanent link to this record
 

 
Author Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P. pdf  doi
openurl 
  Title Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen Type A1 Journal article
  Year 2015 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 212 Issue 212 Pages 1191-1201  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000356706500003 Publication Date 2015-04-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.775 Times cited Open Access  
  Notes Methusalem project NANO; FWO; 246791 COUNTATOMS Approved Most recent IF: 1.775; 2015 IF: 1.616  
  Call Number c:irua:126732 Serial 2204  
Permanent link to this record
 

 
Author Turner, S.; Shenderova, O.; da Pieve, F.; Lu, Y.-G.; Yücelen, E.; Verbeeck, J.; Lamoen, D.; Van Tendeloo, G. pdf  doi
openurl 
  Title Aberration-corrected microscopy and spectroscopy analysis of pristine, nitrogen containing detonation nanodiamond Type A1 Journal article
  Year 2013 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 210 Issue 10 Pages 1976-1984  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Aberration-corrected transmission electron microscopy, electron energy-loss spectroscopy, and density functional theory (DFT) calculations are used to solve several key questions about the surface structure, the particle morphology, and the distribution and nature of nitrogen impurities in detonation nanodiamond (DND) cleaned by a recently developed ozone treatment. All microscopy and spectroscopy measurements are performed at a lowered acceleration voltage (80/120kV), allowing prolonged and detailed experiments to be carried out while minimizing the risk of knock-on damage or surface graphitization of the nanodiamond. High-resolution TEM (HRTEM) demonstrates the stability of even the smallest nanodiamonds under electron illumination at low voltage and is used to image the surface structure of pristine DND. High resolution electron energy-loss spectroscopy (EELS) measurements on the fine structure of the carbon K-edge of nanodiamond demonstrate that the typical * pre-peak in fact consists of three sub-peaks that arise from the presence of, amongst others, minimal fullerene-like reconstructions at the nanoparticle surfaces and deviations from perfect sp(3) coordination at defects in the nanodiamonds. Spatially resolved EELS experiments evidence the presence of nitrogen within the core of DND particles. The nitrogen is present throughout the whole diamond core, and can be enriched at defect regions. By comparing the fine structure of the experimental nitrogen K-edge with calculated energy-loss near-edge structure (ELNES) spectra from DFT, the embedded nitrogen is most likely related to small amounts of single substitutional and/or A-center nitrogen, combined with larger nitrogen clusters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000329299700025 Publication Date 2013-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 37 Open Access  
  Notes 262348 ESMI; 246791 COUNTATOMS; FWO; Hercules; GOA XANES meets ELNES Approved Most recent IF: 1.775; 2013 IF: 1.525  
  Call Number UA @ lucian @ c:irua:110821UA @ admin @ c:irua:110821 Serial 41  
Permanent link to this record
 

 
Author Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. doi  openurl
  Title Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering Type A1 Journal article
  Year 2012 Publication Physica Status Solidi A-Applications And Materials Science Abbreviated Journal Phys Status Solidi A  
  Volume 209 Issue 2 Pages 265-267  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000303382700005 Publication Date 2011-11-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.775; 2012 IF: 1.469  
  Call Number UA @ lucian @ c:irua:136430 Serial 4497  
Permanent link to this record
 

 
Author Vansweevelt, R.; Mortet, V.; D' Haen, J.; Ruttens, bart; van Haesendonck, C.; Partoens, B.; Peeters, F.M.; Wagner, P. doi  openurl
  Title Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes Type A1 Journal article
  Year 2011 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 208 Issue 6 Pages 1252-1258  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000292945800008 Publication Date 2011-02-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 8 Open Access  
  Notes ; The authors gratefully acknowledge the support by FWO – Research Foundation Flanders (project G.0159.07 “Structural and electronic properties of biologically modified, graphene-based layers”), by the Federal Belgian Interuniversity Attraction Poles Programme BELSPO (project TAP VI P6/42 “Quantum effects in clusters and nanowires”) and by the Methusalem network “NANO – Antwerp-Hasselt,” funded by the Flemish Community. Technical assistance by Stoffel D. Janssens (magnet calibration and software development), Dr. Hong Yin (AFM-based thickness studies), Dr. Ronald Thoelen (data analysis), and Prof. Hans-Gerd Boyen (XPS spectroscopy) is greatly appreciated. ; Approved Most recent IF: 1.775; 2011 IF: 1.463  
  Call Number UA @ lucian @ c:irua:91941 Serial 3343  
Permanent link to this record
 

 
Author Willems, B.; Martineau, P.M.; Fisher, D.; van Royen, J.; Van Tendeloo, G. doi  openurl
  Title Dislocation distributions in brown diamond Type A1 Journal article
  Year 2006 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 203 Issue 12 Pages 3076-3080  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000240967400014 Publication Date 2006-09-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 21 Open Access  
  Notes Approved Most recent IF: 1.775; 2006 IF: NA  
  Call Number UA @ lucian @ c:irua:61002 Serial 730  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: