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Author Mahr, C.; Müller-Caspary, K.; Graf, M.; Lackmann, A.; Grieb, T.; Schowalter, M.; Krause, F.F.; Mehrtens, T.; Wittstock, A.; Weissmueller, J.; Rosenauer, A.
Title Measurement of local crystal lattice strain variations in dealloyed nanoporous gold Type A1 Journal article
Year 2018 Publication Materials research letters Abbreviated Journal Mater Res Lett
Volume 6 Issue 1 Pages 84-92
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Reversible macroscopic length changes in nanoporous structures can be achieved by applying electric potentials or by exposing them to different gases or liquids. Thus, these materials are interesting candidates for applications as sensors or actuators. Macroscopic length changes originate from microscopic changes of crystal lattice parameters. In this report, we show spatially resolved measurements of crystal lattice strain in dealloyed nanoporous gold. The results confirm theory by indicating a compression of the lattice along the axis of cylindrically shaped ligaments and an expansion in radial direction. Furthermore, we show that curved npAu surfaces show inward relaxation of the surface layer. [GRAPHICS] .
Address
Corporate Author Thesis
Publisher Taylor & Francis Place of Publication Abingdon Editor
Language Wos 000428141500013 Publication Date 2017-11-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2166-3831 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.773 Times cited 4 Open Access Not_Open_Access
Notes ; This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) under contracts no. RO2057/12-1 (SP 6), WI4497/1-1 (SP 2) and WE1424/17-1 (SP 3) within the research unit FOR2213 (www.nagocat.de). K.M.-C acknowledges support by the DFG under contract no. MU3660/1-1 and T.G. under contract no. RO2057/ 11-1. ; Approved Most recent IF: 4.773
Call Number UA @ lucian @ c:irua:150921 Serial 4973
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Author Rossi, E.H.M.; Van Tendeloo, G.; Rosenauer, A.
Title Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM Type A1 Journal article
Year 2007 Publication Philosophical magazine Abbreviated Journal Philos Mag
Volume 87 Issue 29 Pages 4461-4473
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000249890700003 Publication Date 2007-09-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1478-6435;1478-6443; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.505 Times cited 1 Open Access
Notes Approved Most recent IF: 1.505; 2007 IF: 1.486
Call Number UA @ lucian @ c:irua:66612 Serial 1638
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Author Piscopiello, E.; Rosenauer, A.; Passaseo, A.; Montoya Rossi, E.H.; Van Tendeloo, G.
Title Segregation in InxGa1-xAs/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition Type A1 Journal article
Year 2005 Publication Philosophical magazine Abbreviated Journal Philos Mag
Volume 85 Issue 32 Pages 3857-3870
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000233171500007 Publication Date 2005-11-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1478-6435;1478-6443; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.505 Times cited 11 Open Access
Notes Approved Most recent IF: 1.505; 2005 IF: 1.470
Call Number UA @ lucian @ c:irua:59054 Serial 2961
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells Type A1 Journal article
Year 2009 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 105 Issue 8 Pages 084310,1-084310,8
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements.
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000268064700149 Publication Date 2009-04-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.068 Times cited Open Access
Notes Fwo G.0425.05; Esteem 026019 Approved Most recent IF: 2.068; 2009 IF: 2.072
Call Number UA @ lucian @ c:irua:78282 Serial 2160
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title Bond length variation in Ga1-xInxAs crystals from the Tersoff potential Type A1 Journal article
Year 2007 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 101 Issue 12 Pages 123508,1-4
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000247625700034 Publication Date 2007-06-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 19 Open Access
Notes Approved Most recent IF: 2.068; 2007 IF: 2.171
Call Number UA @ lucian @ c:irua:67460 Serial 247
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Author Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D.
Title Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold Type A1 Journal article
Year 2006 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume 88 Issue 23 Pages Artn 232108
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000238914500031 Publication Date 2006-06-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 8 Open Access
Notes Approved Most recent IF: 3.411; 2006 IF: 3.977
Call Number UA @ lucian @ c:irua:60581 Serial 33
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Author Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A.
Title Measurement of the mean inner potential of ZnO nanorods by transmission electron holography Type A1 Journal article
Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume 86 Issue 15 Pages
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000228901600121 Publication Date 2005-04-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 5 Open Access
Notes Approved Most recent IF: 3.411; 2005 IF: 4.127
Call Number UA @ lucian @ c:irua:54917 Serial 1963
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Author Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A.
Title First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors Type A1 Journal article
Year 2004 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume 85 Issue 21 Pages 4938-4940
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000225300600037 Publication Date 2004-11-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 16 Open Access
Notes Approved Most recent IF: 3.411; 2004 IF: 4.308
Call Number UA @ lucian @ c:irua:49657 Serial 1203
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Author Grieb, T.; Tewes, M.; Schowalter, M.; Müller-Caspary, K.; Krause, F.F.; Mehrtens, T.; Hartmann, J.-M.; Rosenauer, A.
Title Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation Type A1 Journal article
Year 2018 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 184 Issue B Pages 29-36
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract <script type='text/javascript'>document.write(unpmarked('The chemical composition of four Si1-xGex layers grown on silicon was determined from quantitative scanning transmission electron microscopy (STEM). The chemical analysis was performed by a comparison of the high-angle annular dark field (HAADF) intensity with multislice simulations. It could be shown that amorphous surface layers originating from the preparation process by focused-ion beam (FIB) at 30 kV have a strong influence on the quantification: the local specimen thickness is overestimated by approximately a factor of two, and the germanium concentration is substantially underestimated. By means of simulations, the effect of amorphous surface layers on the HAADF intensity of crystalline silicon and germanium is investigated. Based on these simulations, a method is developed to analyze the experimental HAADF-STEM images by taking the influence of the amorphous layers into account which is done by a reduction of the intensities by multiplication with a constant factor. This suggested modified HAADF analysis gives germanium concentrations which are in agreement with the nominal values. The same TEM lamella was treated with low-voltage ion milling which removed the amorphous surface layers completely. The results from subsequent quantitative HAADF analyses are in agreement with the nominal concentrations which validates the applicability of the used frozen-lattice based multislice simulations to describe the HAADF scattering of Si1-xGex in STEM. (C) 2017 Elsevier B.V. All rights reserved.'));
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000417779800004 Publication Date 2017-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 7 Open Access Not_Open_Access
Notes ; This work was supported by the German Research Foundation (DFG) under Contract No. RO2057/11-1. ; Approved Most recent IF: 2.843
Call Number UA @ lucian @ c:irua:148500 Serial 4893
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Author Grieb, T.; Krause, F.F.; Mahr, C.; Zillmann, D.; Müller-Caspary, K.; Schowalter, M.; Rosenauer, A.
Title Optimization of NBED simulations for disc-detection measurements Type A1 Journal article
Year 2017 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 181 Issue Pages 50-60
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Nano-beam electron diffraction (NBED) is a method which can be applied to measure lattice strain and polarisation fields in strained layer heterostructures and transistors. To investigate precision, accuracy and spatial resolution of such measurements in dependence of properties of the specimen as well as electron optical parameters, simulations of NBED patterns are required which allow to predict the result of common disc-detection algorithms. In this paper we demonstrate by focusing on the detection of the central disc in crystalline silicon that such simulations require to take several experimental characteristics into account in order to obtain results which are comparable to those from experimental NBED patterns. These experimental characteristics are the background intensity, the presence of Poisson noise caused by electron statistics and blurring caused by inelastic scattering and by the transfer quality of the microscope camera. By means of these optimized simulations, different effects of specimen properties on disc detection – such as strain, surface morphology and compositional changes on the nanometer scale – are investigated and discussed in the context of misinterpretation in experimental NBED evaluations. It is shown that changes in surface morphology and chemical composition lead to measured shifts of the central disc in the NBED pattern of tens to hundreds of grad. These shifts are of the same order of magnitude or even larger than shifts that could be caused by an electric polarisation field in the range of MV/cm. (C) 2017 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000411170800006 Publication Date 2017-05-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 6 Open Access Not_Open_Access
Notes ; This work was supported by the German Research Foundation (DFG) under Contract No. R02057/11-1, R02057/4-2 and MU3660/1-1. ; Approved Most recent IF: 2.843
Call Number UA @ lucian @ c:irua:146725 Serial 4792
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Author Müller, K.; Schowalter, M.; Jansen, J.; Tsuda, K.; Titantah, J.; Lamoen, D.; Rosenauer, A.
Title Refinement of the 200 structure factor for GaAs using parallel and convergent beam electron nanodiffraction data Type A1 Journal article
Year 2009 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 109 Issue 7 Pages 802-814
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We present a new method to measure structure factors from electron spot diffraction patterns recorded under almost parallel illumination in transmission electron microscopes. Bloch wave refinement routines have been developed to refine the crystal thickness, its orientation and structure factors by comparison of experimentally recorded and calculated intensities. Our method requires a modicum of computational effort, making it suitable for contemporary personal computers. Frozen lattice and Bloch wave simulations of GaAs diffraction patterns are used to derive optimised experimental conditions. Systematic errors are estimated from the application of the method to simulated diffraction patterns and rules for the recognition of physically reasonable initial refinement conditions are derived. The method is applied to the measurement of the 200 structure factor for GaAs. We found that the influence of inelastically scattered electrons is negligible. Additionally, we measured the 200 structure factor from zero loss filtered two-dimensional convergent beam electron diffraction patterns. The precision of both methods is found to be comparable and the results agree well with each other. A deviation of more than 20% from isolated atom scattering data is observed, whereas close agreement is found with structure factors obtained from density functional theory [A. Rosenauer, M. Schowalter, F. Glas, D. Lamoen, Phys. Rev. B 72 (2005), 085326-1], which account for the redistribution of electrons due to chemical bonding via modified atomic scattering amplitudes.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000266787900005 Publication Date 2009-03-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 8 Open Access
Notes Fwo; G.0425.05; Esteem; Ant 200611271505 Approved Most recent IF: 2.843; 2009 IF: 2.067
Call Number UA @ lucian @ c:irua:77361 Serial 2856
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Author Verbeeck, J.; Sc hattschneider, P.; Rosenauer, A.
Title Image simulation of high resolution energy filtered TEM images Type A1 Journal article
Year 2009 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 109 Issue 4 Pages 350-360
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Inelastic image simulation software is presented, implementing the double channeling approximation which takes into account the combination of multiple elastic and single inelastic scattering in a crystal. The approach is described with a density matrix formalism. Two applications in high resolution energy filtered (EFTEM) transmission electron microscopy (TEM) images are presented: thickness-defocus maps for SrTiO3 and exit plane intensities for an (LaAlO3)3(SrTiO3)3 multilayer system. Both systems show a severe breakdown in direct interpretability which becomes worse for higher acceleration voltages, thicker samples and lower excitation edge energies. Since this effect already occurs in the exit plane intensity, it is a fundamental limit and image simulations in EFTEM are indispensable just as they are indispensable for elastic high resolution TEM images.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000265345400009 Publication Date 2009-01-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 36 Open Access
Notes Fwo; Esteem 026019 Approved Most recent IF: 2.843; 2009 IF: 2.067
Call Number UA @ lucian @ c:irua:77272UA @ admin @ c:irua:77272 Serial 1552
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Author Rosenauer, A.; Schowalter, M.; Titantah, J.T.; Lamoen, D.
Title An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy Type A1 Journal article
Year 2008 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 108 Issue 12 Pages 1504-1513
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Thermal diffuse scattered electrons significantly contribute to high-resolution transmission electron microscopy images. Their intensity adds to the background and is peaked at positions of atomic columns. In this paper we suggest an approximation to simulate intensity of thermal diffuse scattered electrons in plane-wave illumination transmission electron microscopy using an emission-potential multislice algorithm which is computationally less intensive than the frozen lattice approximation or the mutual intensity approach. Intensity patterns are computed for Au and InSb for different crystal orientations. These results are compared with intensities from the frozen lattice approximation based on uncorrelated vibration of atoms as well as with the frozen phonon approximation for Au. The frozen phonon method uses a detailed phonon model based on force constants we computed by a density functional theory approach. The comparison shows that our suggested emission-potential method is in close agreement with both the frozen lattice and the frozen phonon approximations.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000260808300002 Publication Date 2008-04-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 25 Open Access
Notes Approved Most recent IF: 2.843; 2008 IF: 2.629
Call Number UA @ lucian @ c:irua:72919 Serial 1033
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Author Kruse, P.; Schowalter, M.; Lamoen, D.; Rosenauer, A.; Gerthsen, D.
Title Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography Type A1 Journal article
Year 2006 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 106 Issue 2 Pages 105-113
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000234535900005 Publication Date 2005-07-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 50 Open Access
Notes Approved Most recent IF: 2.843; 2006 IF: 1.706
Call Number UA @ lucian @ c:irua:56143 Serial 678
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title Density-functional theory calculations of the electron energy-loss near-edge structure of Li-intercalated graphite Type A1 Journal article
Year 2009 Publication Carbon Abbreviated Journal Carbon
Volume 47 Issue 10 Pages 2501-2510
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We have studied the structural and electronic properties of lithium-intercalated graphite (LIG) for various Li content. Atomic relaxation shows that Li above the center of the carbon hexagon in a AAAA stacked graphite is the only stable Li configuration in stage 1 intercalated graphite. Lithium and Carbon 1s energy-loss near-edge structure (ELNES) calculations are performed on the Li-intercalated graphite using the core-excited density-functional theory formulation. Several features of the Li 1s ELNES are correlated with reported experimental features. The ELNES spectra of Li is found to be electron beam orientation sensitive and this property is used to assign the origin of the various Li 1s ELNES features. Information about core-hole screening by the valence electrons and charge transfer in the LIG systems is obtained from the C 1s ELNES and valence charge density difference calculations, respectively.
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Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000268429000025 Publication Date 2009-05-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0008-6223; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 6.337 Times cited 12 Open Access
Notes Fwo G.0425.05; Esteem 026019 Approved Most recent IF: 6.337; 2009 IF: 4.504
Call Number UA @ lucian @ c:irua:77973 Serial 638
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Author Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D.
Title Ab initio computation of the mean inner Coulomb potential of technological important semiconductors Type A1 Journal article
Year 2005 Publication Abbreviated Journal
Volume 1007 Issue Pages 233-236
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:72915 Serial 32
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Author Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D.
Title Calculation of Debye-Waller temperature factors for GaAs Type A1 Journal article
Year 2008 Publication Springer proceedings in physics Abbreviated Journal
Volume 120 Issue Pages 195-198
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:73966 Serial 266
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals Type A1 Journal article
Year 2008 Publication Springer proceedings in physics Abbreviated Journal
Volume 120 Issue Pages 189-194
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:73965 Serial 839
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Author Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D.
Title First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs Type A1 Journal article
Year 2005 Publication Abbreviated Journal
Volume 107 Issue Pages 151-154
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:72916 Serial 1202
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Author Rosenauer, A.; Gerthsen, D.; Van Aert, S.; van Dyck, D.; den Dekker, A.J.
Title Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis Type A1 Journal article
Year 2003 Publication Institute of physics conference series Abbreviated Journal
Volume Issue 180 Pages 19-22
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0979-2 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95118 Serial 2710
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