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  Author Title Year Publication Volume Times cited Additional Links Links (up)
Yan, M.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J. Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4 2000 Journal of applied physics 87 14 UA library record; WoS full record; WoS citing articles doi
Bogaerts, A.; Yan, M.; Gijbels, R.; Goedheer, W. Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge 1999 Journal of applied physics 86 18 UA library record; WoS full record; WoS citing articles doi
Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures 1999 Journal Of Applied Physics 85 16 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism 2012 Applied physics letters 100 63 UA library record; WoS full record; WoS citing articles doi
Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C. High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs 1999 Journal of applied physics 85 6 UA library record; WoS full record; WoS citing articles doi
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device 2012 Applied physics letters 100 29 UA library record; WoS full record; WoS citing articles doi
Brück, S.; Paul, M.; Tian, H.; Müller, A.; Kufer, D.; Praetorius, C.; Fauth, K.; Audehm, P.; Goering, E.; Verbeeck, J.; Van Tendeloo, G.; Sing, M.; Claessen, R.; Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO 2012 Applied physics letters 100 12 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling 2011 Applied physics letters 99 1 UA library record; WoS full record; WoS citing articles doi
Kalkert, C.; Krisponeit, J.-O.; Esseling, M.; Lebedev, O.I.; Moshnyaga, V.; Damaschke, B.; Van Tendeloo, G.; Samwer, K. Resistive switching at manganite/manganite interfaces 2011 Applied physics letters 99 10 UA library record; WoS full record; WoS citing articles pdf doi
Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B. Hydrogen impurities and native defects in CdO 2011 Journal of applied physics 110 13 UA library record; WoS full record; WoS citing articles doi
Laffez, P.; Van Tendeloo, G.; Seshadri, R.; Hervieu, M.; Martin, C.; Maignan, A.; Raveau, B. Microstructural and physical properties of layered manganite oxides related to the magnetoresistive perovskites 1996 Journal of applied physics 80 36 UA library record; WoS full record; WoS citing articles doi
Hai, G.-Q.; Studart, N.; Peeters, F.M.; Koenraad, P.M.; Wolter, J.H. Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system 1996 Journal of applied physics 80 40 UA library record; WoS full record; WoS citing articles doi
Dong, H.M.; Xu, W.; Peeters, F.M. High-field transport properties of graphene 2011 Journal of applied physics 110 17 UA library record; WoS full record; WoS citing articles doi
Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; Hevesi, K.; Gensterblum, G.; Yu, L.M.; Pireaux, J.J.; Grey, F.; Bohr, J. Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001) 1996 Journal of applied physics 80 6 UA library record; WoS full record; WoS citing articles pdf doi
Liu, Y.; Cheng, F.; Li, X.J.; Peeters, F.M.; Chang, K. Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions 2011 Applied physics letters 99 8 UA library record; WoS full record; WoS citing articles doi
Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Electronic properties of hydrogenated silicene and germanene 2011 Applied physics letters 98 63 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach 2011 Journal of applied physics 109 41 UA library record; WoS full record; WoS citing articles doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Structural and vibrational properties of amorphous GeO2 from first-principles 2011 Applied physics letters 98 226 UA library record; WoS full record; WoS citing articles doi
Bogaerts, A.; van Straaten, M.; Gijbels, R. Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method 1995 Journal of applied physics 77 87 UA library record; WoS full record; WoS citing articles doi
Wu, Z.; Peeters, F.M.; Chang, K. Spin and momentum filtering of electrons on the surface of a topological insulator 2011 Applied physics letters 98 33 UA library record; WoS full record; WoS citing articles doi
Yusupov, M.; Bultinck, E.; Depla, D.; Bogaerts, A. Elucidating the asymmetric behavior of the discharge in a dual magnetron sputter deposition system 2011 Applied physics letters 98 4 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Peelaers, H.; Hernández-Nieves, A.D.; Leenaerts, O.; Partoens, B.; Peeters, F.M. Vibrational properties of graphene fluoride and graphane 2011 Applied physics letters 98 66 UA library record; WoS full record; WoS citing articles doi
Paul, M.; Kufer, D.; Müller, A.; Brück, S.; Goering, E.; Kamp, M.; Verbeeck, J.; Tian, H.; Van Tendeloo, G.; Ingle, N.J.C.; Sing, M.; Claessen, R. Fe3O4/ZnO : a high-quality magnetic oxide-semiconductor heterostructure by reactive deposition 2011 Applied physics letters 98 27 UA library record; WoS full record; WoS citing articles pdf doi
Ao, Z.M.; Hernández-Nieves, A.D.; Peeters, F.M.; Li, S. Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons 2010 Applied physics letters 97 43 UA library record; WoS full record; WoS citing articles doi
Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 2010 Applied physics letters 97 12 UA library record; WoS full record; WoS citing articles doi
Neek-Amal, M.; Peeters, F.M. Defected graphene nanoribbons under axial compression 2010 Applied physics letters 97 43 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus 2010 Journal of applied physics 108 7 UA library record; WoS full record; WoS citing articles doi
Ao, Z.M.; Peeters, F.M. Electric field: A catalyst for hydrogenation of graphene 2010 Applied physics letters 96 88 UA library record; WoS full record; WoS citing articles doi
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles doi
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