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“The morphology, structure and texture of carbon nanotubes: an electron microscopy study”. Amelinckx S, Bernaerts D, Van Tendeloo G, van Landuyt J, Lucas AA, Mathot M, Lambin P, , 515 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Smolin AA, Diamond and related materials 6, 159 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 116
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“New erbium silicide superstructures: a study by high resolution electron microscopy”. Frangis N, Van Tendeloo G, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Physica status solidi: A: applied research 158, 107 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
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“New intermediate defect configuration in Si studied by in situ HREM irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Conference series of the Institute of Physics 157, 43 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, The journal of imaging science and technology 41, 301 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
Times cited: 1
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“Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev A, Materials Research Society symposium proceedings 404, 189 (1996)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 77, 423 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 23
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“Ordering and defects in BanTaxTiyO3n ternary oxides”. Nistor L, Van Tendeloo G, Amelinckx S, Shpanchenko RV, van Landuyt J, Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences , 869 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Precipitation behavior in Cu-Co alloy”. Takeda M, Shinohara G, Yamada H, Yoshida S, van Landuyt J, Hashimoto H, , 205 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Structural aspects of carbon nanotubes”. Bernaerts D, Amelinckx S, Zhang XB, Van Tendeloo G, van Landuyt J, , 551 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Structural effects of element substitution in the CuO plane of the 1-2-3 YBCO superconductor”. Krekels T, Van Tendeloo G, Amelinckx S, van Landuyt J, Acta crystallographica: section A: foundations of crystallography 49, 287 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.307
Times cited: 56
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“Structural studies of diamond thin films grown from the arc plasma”. Nistor LC, van Landuyt J, Journal of materials research 12, 2533 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 13
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“Structural studies of nanocrystalline diamond thin films”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Korothushenko KG, Smolin AA, Materials science forum 239-241, 115 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“The study of carbon nanotubes produced by catalytic method”. Ivanov V, Nagy JB, Lambin P, Lucas A, Zhang XB, Zhang XF, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Chemical physics letters 223, 329 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.897
Times cited: 405
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“Superlattice variants in Sr2CuO2(CO3): an electron microscopy study”. Milat O, Van Tendeloo G, van Landuyt J, Amelinckx S, Acta crystallographica: section A: foundations of crystallography 49, 357 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.307
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“TEM studies of processed Si device materials”. Vanhellemont J, Bender H, van Landuyt J, Conference series of the Institute of Physics 157, 393 (1997)
Abstract: Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals”. van Renterghem W, Schryvers D, van Landuyt J, Bollen D, van Roost C, de Keyzer R, The journal of imaging science and technology 45, 83 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R Hawaii, page 70 (1995).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R, , 36 (1992)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals”. Van Renterghem W, Karthauser S, Schryvers D, van Landuyt J, De Keyzer R, Van Roost C, , 167 (2000)
Abstract: Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals”. Zhang Z, Geng W, van Landuyt J, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 1177 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp”. Van Tendeloo G, Schryvers D, van Dyck D, van Landuyt J, Amelinckx S, MRS bulletin , 57 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.667
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“Electron microscopy study of twin sequences and branching in NissAl34 3R martensite”. Schryvers D, Van Landuyt J, ICOMAT (1992)
Abstract: Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
Keywords: A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
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“Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions”. Nistor LC, Nistor SV, Dinca G, Georgeoni P, van Landuyt J, Manfredotti C, Vittone E, Journal of physics : condensed matter 14, 10983 (2002). http://doi.org/10.1088/0953-8984/14/44/414
Abstract: High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.649
Times cited: 7
DOI: 10.1088/0953-8984/14/44/414
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“Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon”. Simoen E, Loo R, Claeys C, de Gryse O, Clauws P, van Landuyt J, Lebedev O, Journal of physics : condensed matter
T2 –, Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY 14, 13185 (2002). http://doi.org/10.1088/0953-8984/14/48/367
Abstract: Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.649
Times cited: 3
DOI: 10.1088/0953-8984/14/48/367
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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