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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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van Landuyt, J.; Vanhellemont, J. |
High-resolution electron microscopy for semiconducting materials science |
1994 |
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UA library record |
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Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J. |
In situ HREM study of electron irradiation effects in AgCl microcrystals |
1992 |
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UA library record |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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van Landuyt, J.; Kuypers, S.; van Heurck, C.; Van Tendeloo, G.; Amelinckx, S. |
Methods of structural analysis of modulated structures and quasicrystals |
1993 |
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UA library record |
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van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
Microscopy of gemmological materials |
1997 |
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4 |
UA library record; WoS full record; WoS citing articles |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. |
A temperature study of mixed AgBr-AgBrI tabular crystals |
1995 |
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3 |
UA library record; WoS full record; WoS citing articles |
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Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J. |
Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy |
1992 |
Dentistry in Japan |
29 |
|
UA library record |
|
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Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Tanner, L.E. |
HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys |
1994 |
Icem |
13 |
|
UA library record |
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Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
HREM study of Rb6C60 and helical carbon nanotubules |
1994 |
Icem |
13 |
|
UA library record |
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Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of β-SiC at 9500C and structural characterization |
1996 |
Nuclear instruments and methods in physics research |
B112 |
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UA library record |
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Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
|
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van Landuyt, J. |
Een tempel voor elektronenmicroscopie “kijken naar atomen” |
1998 |
Fonds informatief |
38 |
|
UA library record |
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Schryvers, D.; Van Landuyt, J. |
Electron microscopy study of twin sequences and branching in NissAl34 3R martensite |
1992 |
ICOMAT |
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Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM |
1993 |
Journal of crystal growth |
126 |
4 |
UA library record; WoS full record; WoS citing articles |
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Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM |
1993 |
Journal of crystal growth |
126 |
4 |
UA library record; WoS full record; WoS citing articles |
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Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions |
2003 |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
107 |
9 |
UA library record; WoS full record; WoS citing articles |
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de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
2003 |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
340 |
4 |
UA library record; WoS full record; WoS citing articles |
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De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
1999 |
Microelectronic engineering |
45 |
|
UA library record; WoS full record |
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de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
1999 |
The review of scientific instruments |
70 |
5 |
UA library record; WoS full record; WoS citing articles |
|
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Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J. |
Carbon nano-tubes: their formation process and observation by electron microscopy |
1993 |
Journal of crystal growth |
130 |
190 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
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UA library record; WoS full record; |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry |
1991 |
Journal of crystal growth |
110 |
40 |
UA library record; WoS full record; WoS citing articles |
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Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
1997 |
Journal of crystal growth |
173 |
4 |
UA library record; WoS full record; WoS citing articles |
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de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
2004 |
Journal of the electrochemical society |
151 |
13 |
UA library record; WoS full record; WoS citing articles |
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Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
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de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
2001 |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
308 |
3 |
UA library record; WoS full record; WoS citing articles |
|
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Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
1996 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
74 |
20 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D. |
Colloid size distributions in ion implanted glass |
1993 |
Journal of non-crystalline solids |
162 |
63 |
UA library record; WoS full record; WoS citing articles |
|
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Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
1996 |
The journal of imaging science and technology |
40 |
4 |
UA library record; WoS full record; WoS citing articles |
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