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  Author Title Year Publication Volume Times cited Additional Links Links
van Landuyt, J.; Vanhellemont, J. High-resolution electron microscopy for semiconducting materials science 1994 UA library record
Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J. In situ HREM study of electron irradiation effects in AgCl microcrystals 1992 UA library record
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation 1997 UA library record
van Landuyt, J.; Kuypers, S.; van Heurck, C.; Van Tendeloo, G.; Amelinckx, S. Methods of structural analysis of modulated structures and quasicrystals 1993 UA library record
van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. Microscopy of gemmological materials 1997 4 UA library record; WoS full record; WoS citing articles
Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. A temperature study of mixed AgBr-AgBrI tabular crystals 1995 3 UA library record; WoS full record; WoS citing articles
Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J. Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy 1992 Dentistry in Japan 29 UA library record
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Tanner, L.E. HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys 1994 Icem 13 UA library record
Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. HREM study of Rb6C60 and helical carbon nanotubules 1994 Icem 13 UA library record
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. Ion beam synthesis of β-SiC at 9500C and structural characterization 1996 Nuclear instruments and methods in physics research B112 UA library record
Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope 1995 Materials science and technology 11 7 UA library record; WoS full record; WoS citing articles
van Landuyt, J. Een tempel voor elektronenmicroscopie “kijken naar atomen” 1998 Fonds informatief 38 UA library record
Schryvers, D.; Van Landuyt, J. Electron microscopy study of twin sequences and branching in NissAl34 3R martensite 1992 ICOMAT pdf
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM 1993 Journal of crystal growth 126 4 UA library record; WoS full record; WoS citing articles
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM 1993 Journal of crystal growth 126 4 UA library record; WoS full record; WoS citing articles pdf doi
Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions 2003 The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical 107 9 UA library record; WoS full record; WoS citing articles doi
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon 2003 Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340 4 UA library record; WoS full record; WoS citing articles doi
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers 1999 Microelectronic engineering 45 UA library record; WoS full record doi
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon 1999 The review of scientific instruments 70 5 UA library record; WoS full record; WoS citing articles doi
Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J. Carbon nano-tubes: their formation process and observation by electron microscopy 1993 Journal of crystal growth 130 190 UA library record; WoS full record; WoS citing articles doi
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation 2001 Institute of physics conference series UA library record; WoS full record;
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry 1991 Journal of crystal growth 110 40 UA library record; WoS full record; WoS citing articles
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas 1997 Journal of crystal growth 173 4 UA library record; WoS full record; WoS citing articles
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy 2004 Journal of the electrochemical society 151 13 UA library record; WoS full record; WoS citing articles pdf doi
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy 2001 Materials science in semiconductor processing 4 UA library record; WoS full record pdf doi
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM 2001 Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308 3 UA library record; WoS full record; WoS citing articles pdf doi
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. The chirality of carbon nanotubules determined by dark-field electron microscopy 1996 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 74 20 UA library record; WoS full record; WoS citing articles pdf doi
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D. Colloid size distributions in ion implanted glass 1993 Journal of non-crystalline solids 162 63 UA library record; WoS full record; WoS citing articles doi
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals 1996 The journal of imaging science and technology 40 4 UA library record; WoS full record; WoS citing articles
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