Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
Doevenspeck, J.; Zografos, O.; Gurunarayanan, S.; Lauwereins, R.; Raghavan, P.; Sorée, B. |
Design and simulation of plasmonic interference-based majority gate |
2017 |
AIP advances |
7 |
|
UA library record; WoS full record; WoS citing articles |
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃ and the antiferromagnet FeCl₂ : a detailed first-principles study |
2021 |
Physical Review B |
103 |
|
UA library record; WoS full record; WoS citing articles |
Vanderveken, F.; Mulkers, J.; Leliaert, J.; Van Waeyenberge, B.; Sorée, B.; Zografos, O.; Ciubotaru, F.; Adelmann, C. |
Confined magnetoelastic waves in thin waveguides |
2021 |
Physical Review B |
103 |
|
UA library record; WoS full record; WoS citing articles |
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
Tiwari, S.; Vanherck, J.; Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B. |
Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy |
2021 |
Physical review research |
3 |
|
UA library record; WoS full record; WoS citing articles |
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects |
2019 |
2D materials |
6 |
3 |
UA library record; WoS full record; WoS citing articles |
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects |
2018 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX |
|
|
UA library record; WoS full record; WoS citing articles |
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. |
Can p-channel tunnel field-effect transistors perform as good as n-channel? |
2014 |
Applied physics letters |
105 |
8 |
UA library record; WoS full record; WoS citing articles |
Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. |
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility |
2005 |
Microelectronic engineering |
80 |
1 |
UA library record; WoS full record; WoS citing articles |
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. |
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes |
2018 |
IEEE journal of the Electron Devices Society |
6 |
5 |
UA library record; WoS full record; WoS citing articles |
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
Devolder, T.; Bultynck, O.; Bouquin, P.; Nguyen, V.D.; Rao, S.; Wan, D.; Sorée, B.; Radu, I.P.; Kar, G.S.; Couet, S. |
Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions |
2020 |
Physical Review B |
102 |
|
UA library record; WoS full record; WoS citing articles |
Tiwari, S.; Van de Put, M.L.; Temst, K.; Vandenberghe, W.G.; Sorée, B. |
Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators |
2023 |
Physical review applied |
19 |
|
UA library record; WoS full record; WoS citing articles |
Vanherck, J.; Sorée, B.; Magnus, W. |
Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields |
2018 |
Journal of physics : condensed matter |
30 |
|
UA library record; WoS full record; WoS citing articles |
Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
Moors, K.; Sorée, B.; Magnus, W. |
Analytic solution of Ando's surface roughness model with finite domain distribution functions |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
|
|
UA library record; WoS full record |
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. |
An envelope function formalism for lattice-matched heterostructures |
2015 |
Physica: B : condensed matter |
470-471 |
5 |
UA library record; WoS full record; WoS citing articles |
Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated Tungsten diselenide |
2020 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 |
|
|
UA library record; WoS full record |
Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated platinum diselenide : the impact of platinum vacancies |
2021 |
Materials |
14 |
|
UA library record; WoS full record; WoS citing articles |
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab initio modeling of few-layer dilute magnetic semiconductors |
2021 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX |
|
|
UA library record; WoS full record |
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. |
2D ferromagnetism at finite temperatures under quantum scrutiny |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
Sels, D.; Sorée, B.; Groeseneken, G. |
2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors |
2010 |
|
|
|
UA library record |
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. |
15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
|
|
UA library record; WoS full record |