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Author Brauns, E.; van Hoof, E.; Huyskens, C.; de Wever, H.
Title (up) On the concept of a supervisory, fuzzy set logic based, advanced filtration control in membrane bioreactors Type A1 Journal article
Year 2011 Publication Desalination and water treatment Abbreviated Journal
Volume 29 Issue 1/3 Pages 119-127
Keywords A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
Abstract The filtration process within a membrane bioreactor (MBR) is mostly controlled in a classic way through typical set-points such as aeration flow rate, filtration duration, backwash frequency or relaxation duration. The values of these filtration set-points result from experience and remain often unchanged during the installations operational lifetime. Filtration is dictated considerably by membrane fouling phenomena. The fouling potential of the mixed liquor however can significantly fluctuate, even daily, from changing influent characteristics. Fixed set-point values thus may represent sub-optimal filtration conditions. Consequently, a supervising advanced control system, being able to continuously adapt the set-points values would be beneficial regarding the MBR filtration process optimization. Such optimization could reduce the corresponding MBR energy consumption, e.g. linked to the filtration related membrane aeration. An Advanced Control System (ACS) based on Fuzzy Set Logic (FSL) is introduced here, enabling to supervise an existing classic membrane filtration control system. Such ACS is able to daily (or even more frequent) optimize the set-points of the underlying classic control system, from the input of various sensor and process parameter values. The theoretical background and practical implementation of the FSL based ACS concept is explained.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000291314400014 Publication Date 2011-06-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1944-3994; 1944-3986 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:90094 Serial 8328
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Author Cherigui, E.A.M.; Şentosun, K.; Mamme, M.H.; Lukaczynska, M.; Terryn, H.; Bals, S.; Ustarroz, J.
Title (up) On the control and effect of water content during the electrodeposition of Ni nanostructures from deep eutectic solvents Type A1 Journal article
Year 2018 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume 122 Issue 122 Pages 23129-23142
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The electrodeposition of nickel nanostructures on glassy carbon was investigated in 1:2 choline chloride urea deep eutectic solvent (DES) containing different amounts of water. By combining electrochemical techniques, with ex situ field emission scanning electron microscopy, high-angle annular dark field scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy, the effect of water content on the electrochemical processes occurring during nickel deposition was better understood. At highly negative potentials and depending on water content, Ni growth is halted due to water splitting and formation of a mixed layer of Ni/NiOx(OH)(2(1-x)(ads)). Moreover, under certain conditions, the DES components can also be (electro)chemically reduced at the electrode surface, blocking further three-dimensional growth of the Ni NPs. Hence, a two-dimensional crystalline Ni-containing network can be formed in the interparticle region.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000447471700038 Publication Date 2018-09-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447; 1932-7455 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited 27 Open Access OpenAccess
Notes ; E.A.M.C. and M.H.M. acknowledge funding from the Fonds Wetenschappelijk Onderzoek in Flanders (FWO, research project G019014N). S.B. acknowledges funding from the European Research Council (Starting Grant No. COLOURATOMS 335078). Finally, J.U. acknowledges funding from the Fonds Wetenschappelijk Onderzoek in Flanders (FWO, postdoctoral grant 12I7816N). ; ecas_sara Approved Most recent IF: 4.536
Call Number UA @ lucian @ c:irua:154731 Serial 5121
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Author Linek, J.; Wyszynski, M.; Müller, B.; Korinski, D.; Milošević, M.V.; Kleiner, R.; Koelle, D.
Title (up) On the coupling of magnetic moments to superconducting quantum interference devices Type A1 Journal article
Year 2024 Publication Superconductor science and technology Abbreviated Journal
Volume 37 Issue 2 Pages 025010-25012
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate the coupling factor phi( mu) that quantifies the magnetic flux phi per magnetic moment mu of a point-like magnetic dipole that couples to a superconducting quantum interference device (SQUID). Representing the dipole by a tiny current-carrying (Amperian) loop, the reciprocity of mutual inductances of SQUID and Amperian loop provides an elegant way of calculating phi(mu)(r,e(mu)) vs. position r and orientation e(mu) of the dipole anywhere in space from the magnetic field B-J(r) produced by a supercurrent circulating in the SQUID loop. We use numerical simulations based on London and Ginzburg-Landau theory to calculate phi (mu) from the supercurrent density distributions in various superconducting loop geometries. We treat the far-field regime ( r greater than or similar to a= inner size of the SQUID loop) with the dipole placed on (oriented along) the symmetry axis of circular or square shaped loops. We compare expressions for phi (mu) from simple filamentary loop models with simulation results for loops with finite width w (outer size A > alpha), thickness d and London penetration depth lambda(L )and show that for thin ( d << alpha ) and narrow (w < alpha) loops the introduction of an effective loop size a(eff) in the filamentary loop-model expressions results in good agreement with simulations. For a dipole placed right in the center of the loop, simulations provide an expression phi(mu)(a,A,d,lambda(L)) that covers a wide parameter range. In the near-field regime (dipole centered at small distance z above one SQUID arm) only coupling to a single strip representing the SQUID arm has to be considered. For this case, we compare simulations with an analytical expression derived for a homogeneous current density distribution, which yields excellent agreement for lambda(L)>w,d . Moreover, we analyze the improvement of phi(mu) provided by the introduction of a narrow constriction in the SQUID arm below the magnetic dipole.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001145725500001 Publication Date 2024-01-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Additional Links UA library record; WoS full record
Impact Factor 3.6 Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: 3.6; 2024 IF: 2.878
Call Number UA @ admin @ c:irua:202759 Serial 9067
Permanent link to this record
 
 
Author Potapov, P.; Shelyakov, A.; Schryvers, D.
Title (up) On the crystal structure of TiNi-Cu martensite Type A1 Journal article
Year 2001 Publication Scripta materialia Abbreviated Journal Scripta Mater
Volume 44 Issue Pages 1-7
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000166808100001 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.747 Times cited 36 Open Access
Notes Approved Most recent IF: 3.747; 2001 IF: 1.130
Call Number UA @ lucian @ c:irua:48378 Serial 2433
Permanent link to this record
 
 
Author de Raedt, I.; Janssens, K.; Veeckman, J.
Title (up) On the distinction between 16th and 17th century Venetian glass and façon-de-Venise glass Type H3 Book chapter
Year 2002 Publication Abbreviated Journal
Volume Issue Pages 95-121
Keywords H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:40354 Serial 5754
Permanent link to this record
 
 
Author Martin, J.M.L.; François, J.P.; Gijbels, R.
Title (up) On the effect of centrifugal stretching on the rotational partition function of an asymmetric top Type A1 Journal article
Year 1991 Publication The journal of chemical physics Abbreviated Journal J Chem Phys
Volume 95 Issue Pages 8374-8389
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1991GR66500062 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-9606 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.952 Times cited 12 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:716 Serial 2434
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Author Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M.
Title (up) On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study Type A1 Journal article
Year 2017 Publication Journal of applied physics Abbreviated Journal
Volume 121 Issue 4 Pages 044505
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel. Published by AIP Publishing.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000393480100030 Publication Date 2017-01-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:152673 Serial 8329
Permanent link to this record
 
 
Author Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W.
Title (up) On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications Type A1 Journal article
Year 2018 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 7 Issue 5 Pages P228-P237
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (<1%). Literature proposes the formation of local semiconducting Si3P4 complexes to explain the observed behaviors in Si:P [Z. Ye et al., ECS Trans., 50(9) 2013, p. 1007-10111. The development of tensile strain and the saturation in active carrier is attributed to the presence of local complexes while their dispersal on annealing is attributed to strain reduction and increase in active carrier density. However, the existence of such local complexes is not proven and a fundamental void exists in understanding the structure-property correlation in Si:P films. In this respect, our work investigates the reason behind the evolution of strain and electrical properties in the as-grown and annealed Si:P epitaxial layers using ab-initio techniques and corroborate the results with physical characterization techniques. It will be shown that the strain developed in Si:P films is not due to any specific complexes while the formation of Phosphorus-vacancy complexes will be shown responsible for the carrier saturation and the increase in resistivity in the as-grown films. Interstitial/precipitate formation is suggested to be a reason for the strain loss in the annealed films. (C) The Author(s) 2018. Published by ECS.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication Pennington (N.J.) Editor
Language Wos 000440834200010 Publication Date 2018-05-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769; 2162-8777 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 4 Open Access OpenAccess
Notes Approved Most recent IF: 1.787
Call Number UA @ lucian @ c:irua:153204 Serial 5122
Permanent link to this record
 
 
Author Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K.
Title (up) On the ferromagnetic exchange in Mn-doped III-V semiconductors Type A1 Journal article
Year 2003 Publication Physica: B : condensed matter T2 – 23rd International Conference on Low Temperature Physics (LT23), AUG 20-27, 2002, HIROSHIMA, JAPAN Abbreviated Journal Physica B
Volume 329 Issue Part 2 Pages 1282-1283
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments. (C) 2003 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000183802700400 Publication Date 2003-02-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.386 Times cited 5 Open Access
Notes Approved Most recent IF: 1.386; 2003 IF: 0.908
Call Number UA @ lucian @ c:irua:103813 Serial 2435
Permanent link to this record
 
 
Author Idrissi, H.; Béché, A.; Gauquelin, N.; Ul-Haq, I.; Bollinger, C.; Demouchy, S.; Verbeeck, J.; Pardoen, T.; Schryvers, D.; Cordier, P.
Title (up) On the formation mechanisms of intragranular shear bands in olivine by stress-induced amorphization Type A1 Journal article
Year 2022 Publication Acta materialia Abbreviated Journal Acta Mater
Volume 239 Issue Pages 118247-118249
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Intragranular amorphization shear lamellae are found in deformed olivine aggregates. The detailed trans-mission electron microscopy analysis of intragranular lamella arrested in the core of a grain provides novel information on the amorphization mechanism. The deformation field is complex and heteroge-neous, corresponding to a shear crack type instability involving mode I, II and III loading components. The formation and propagation of the amorphous lamella is accompanied by the formation of crystal defects ahead of the tip. These defects are geometrically necessary [001] dislocations, characteristics of high-stress deformation in olivine, and rotational nanodomains which are tentatively interpreted as disclinations. We show that these defects play an important role in dictating the path followed by the amorphous lamella. Stress-induced amorphization in olivine would thus result from a direct crystal-to -amorphous transformation associated with a shear instability and not from a mechanical destabilization due to the accumulation of high number of defects from an intense preliminary deformation. The pref-erential alignment of some lamellae along (010) is a proof of the lower ultimate mechanical strength of these planes.(c) 2022 The Authors. Published by Elsevier Ltd on behalf of Acta Materialia Inc. This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ )
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000861076600004 Publication Date 2022-08-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6454 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 9.4 Times cited 5 Open Access OpenAccess
Notes The QuanTEM microscope was partially funded by the Flemish government. The K2 camera was funded by FWO Hercules fund G0H4316N 'Direct electron detector for soft matter TEM'. A. Beche acknowledges funding from FWO project G093417N ('Compressed sensing enabling low dose imaging in transmission electron microscopy'). H. Idrissi is mandated by the Belgian National Fund for Scientific Research (FSR-FNRS). This work was supported by the FNRS under Grant PDR – T011322F and by the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme under grant agreement No 787,198 Time Man. J-L Rouviere is acknowledged for his support with the GPA softawre. Approved Most recent IF: 9.4
Call Number UA @ admin @ c:irua:191432 Serial 7186
Permanent link to this record
 
 
Author Ding, L.; Sapanathan, T.; Schryvers, D.; Simar, A.; Idrissi, H.
Title (up) On the formation of antiphase boundaries in Fe₄Al₁₃ intermetallics during a high temperature treatment Type A1 Journal article
Year 2022 Publication Scripta materialia Abbreviated Journal Scripta Mater
Volume 215 Issue Pages 114726-6
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract In this paper, we report atomic scale observations and formation mechanisms of a high-density of antiphase boundaries (APBs) within an ultra-fine-grained Fe4Al13 intermetallic layer at an Al/steel interface after a heat treatment at 596 degrees C. The results reveal that the APBs are formed by nucleation and the glide of partial dislocations with Burgers vector of b/3[010] (b = 12.47 angstrom). The intensive activation of APBs locally transforms the Fe4Al13 structure from the quasicrystal approximant structure to a quasicrystal. Very few stacking faults and nanotwins are observed indicating that the formation of planar defects is mainly driven by this transformation. This new insight on the formation of high density of APBs could possibly lead to an improvement in toughness by increasing the strength/ductility balance of this intermetallic.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000800016600003 Publication Date 2022-04-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6462 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 6 Times cited Open Access OpenAccess
Notes Approved Most recent IF: 6
Call Number UA @ admin @ c:irua:188644 Serial 7088
Permanent link to this record
 
 
Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.; Moshchalkov, V.V.
Title (up) On the Ginzburg-Landau analysis of a mixed s-dx2-y2-wave superconducting mesoscopic square Type A1 Journal article
Year 2000 Publication Solid State Communications Abbreviated Journal Solid State Commun
Volume 114 Issue Pages 499-504
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000086679000011 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 2 Open Access
Notes Approved Most recent IF: 1.554; 2000 IF: 1.271
Call Number UA @ lucian @ c:irua:29033 Serial 2436
Permanent link to this record
 
 
Author Martin, J.M.L.; François, J.P.; Gijbels, R.
Title (up) On the heat formation of C8 and higher carbon clusters (letter to the editor) Type A1 Journal article
Year 1991 Publication The journal of chemical physics Abbreviated Journal J Chem Phys
Volume 95 Issue Pages 9420-9421
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1991GV82500076 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-9606 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.952 Times cited 27 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:719 Serial 2437
Permanent link to this record
 
 
Author Deutsch, F.; Stranger, M.; Kaplinskii, A.E.; Samek, L.; Joos, P.; Van Grieken, R.
Title (up) On the impact of precipitation amount on the concentration of elements and ions in urban aerosol particles Type A3 Journal article
Year 2003 Publication Atmospheric and oceanic optics Abbreviated Journal
Volume 16 Issue 10 Pages 850-855
Keywords A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:43561 Serial 8330
Permanent link to this record
 
 
Author Wang, J.; Nguyen, M.D.; Gauquelin, N.; Verbeeck, J.; Do, M.T.; Koster, G.; Rijnders, G.; Houwman, E.
Title (up) On the importance of the work function and electron carrier density of oxide electrodes for the functional properties of ferroelectric capacitors Type A1 Journal article
Year 2020 Publication Physica Status Solidi-Rapid Research Letters Abbreviated Journal Phys Status Solidi-R
Volume 14 Issue 14 Pages 1900520
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract It is important to understand the effect of the interfaces between the oxide electrode layers and the ferroelectric layer on the polarization response for optimizing the device performance of all-oxide ferroelectric devices. Herein, the effects of the oxide La0.07Ba0.93SnO3 (LBSO) as an electrode material in an PbZr0.52Ti0.48O3 (PZT) ferroelectric capacitor are compared with those of the more commonly used SrRuO3 (SRO) electrode. SRO (top)/PZT/SRO (bottom), SRO/PZT/LBSO, and SRO/PZT/2 nm SRO/LBSO devices are fabricated. Only marginal differences in crystalline properties, determined by X-ray diffraction and scanning transmission electron microscopy, are found. High-quality polarization loops are obtained, but with a much larger coercive field for the SRO/PZT/LBSO device. In contrast to the SRO/PZT/SRO device, the polarization decreases strongly with increasing field cycling. This fatigue problem can be remedied by inserting a 2 nm SRO layer between PZT and LBSO. It is argued that strongly increased charge injection into the PZT occurs at the bottom interface, because of the low PZT/LBSO interfacial barrier and the much lower carrier density in LBSO, as compared with that in SRO, causing a low dielectric constant, depleted layer in LBSO. The charge injection creates a trapped space charge in the PZT, causing the difference in fatigue behavior.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000506195600001 Publication Date 2019-12-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6254 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.8 Times cited 6 Open Access OpenAccess
Notes ; This work was supported by Nederlandse Organisatie voor Wetenschappelijk Onderzoek through grant no.13HTSM01. ; Approved Most recent IF: 2.8; 2020 IF: 3.032
Call Number UA @ admin @ c:irua:165681 Serial 6316
Permanent link to this record
 
 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.
Title (up) On the interpretation of HREM images of partially ordered alloys Type A1 Journal article
Year 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 60 Issue 2 Pages 265-282
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995TZ14700008 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited 20 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13014 Serial 2438
Permanent link to this record
 
 
Author Uytdenhouwen, Y.; Bal, Km.; Neyts, Ec.; Meynen, V.; Cool, P.; Bogaerts, A.
Title (up) On the kinetics and equilibria of plasma-based dry reforming of methane Type A1 Journal article
Year 2021 Publication Chemical Engineering Journal Abbreviated Journal Chem Eng J
Volume 405 Issue Pages 126630
Keywords A1 Journal article; Laboratory of adsorption and catalysis (LADCA); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Plasma reactors are interesting for gas-based chemical conversion but the fundamental relation between the plasma chemistry and selected conditions remains poorly understood. Apparent kinetic parameters for the loss and formation processes of individual components of gas conversion processes, can however be extracted by performing experiments in an extended residence time range (2–75 s) and fitting the gas composition to a firstorder kinetic model of the evolution towards partial chemical equilibrium (PCE). We specifically investigated the differences in kinetic characteristics and PCE state of the CO2 dissociation and CH4 reforming reactions in a dielectric barrier discharge reactor (DBD), how these are mutually affected when combining both gases in the dry reforming of methane (DRM) reaction, and how they change when a packing material (non-porous SiO2) is added to the reactor. We find that CO2 dissociation is characterized by a comparatively high reaction rate of 0.120 s−1 compared to CH4 reforming at 0.041 s−1; whereas CH4 reforming reaches higher equilibrium conversions, 82% compared to 53.6% for CO2 dissociation. Combining both feed gases makes the DRM reaction to proceed at a relatively high rate (0.088 s−1), and high conversion (75.4%) compared to CO2 dissociation, through accessing new chemical pathways between the products of CO2 and CH4. The addition of the packing material can also distinctly influence the conversion rate and position of the equilibrium, but its precise effect depends strongly on the gas composition. Comparing different CO2:CH4 ratios reveals the delicate balance of the combined chemistry. CO2 drives the loss reactions in DRM, whereas CH4 in the mixture suppresses back reactions. As a result, our methodology provides some of the insight necessary to systematically tune the conversion process.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000621197700003 Publication Date 2020-08-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1385-8947 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 6.216 Times cited Open Access OpenAccess
Notes The authors acknowledge financial support from the European Fund for Regional Development through the cross-border collaborative Interreg V program Flanders-the Netherlands (project EnOp), the Fund for Scientific Research (FWO; grant number: G.0254.14N), a TOP-BOF project and an IOF-SBO (SynCO2Chem) project from the University of Antwerp. Approved Most recent IF: 6.216
Call Number PLASMANT @ plasmant @c:irua:172458 Serial 6411
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Author Shariat, M.; Shokri, B.; Neyts, E.C.
Title (up) On the low-temperature growth mechanism of single walled carbon nanotubes in plasma enhanced chemical vapor deposition Type A1 Journal article
Year 2013 Publication Chemical physics letters Abbreviated Journal Chem Phys Lett
Volume 590 Issue Pages 131-135
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Despite significant progress in single walled carbon nanotube (SWCNT) production by plasma enhanced chemical vapor deposition (PECVD), the growth mechanism in this method is not clearly understood. We employ reactive molecular dynamics simulations to investigate how plasma-based deposition allows growth at low temperature. We first investigate the SWCNT growth mechanism at low and high temperatures under conditions similar to thermal CVD and PECVD. We then show how ion bombardment during the nucleation stage increases the carbon solubility in the catalyst at low temperature. Finally, we demonstrate how moderate energy ions sputter amorphous carbon allowing for SWCNT growth at 500 K. (C) 2013 Elsevier B. V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000327721000024 Publication Date 2013-10-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0009-2614; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.815 Times cited 14 Open Access
Notes Approved Most recent IF: 1.815; 2013 IF: 1.991
Call Number UA @ lucian @ c:irua:112775 Serial 2439
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Author Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.;
Title (up) On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films Type A1 Journal article
Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 108 Issue 108 Pages 082106
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In situ doped epitaxial Si: P films with P concentrations > 1 x 10(21) at./cm(3) are suitable for source-drain stressors of n-FinFETs. These films combine the advantages of high conductivity derived from the high P doping with the creation of tensile strain in the Si channel. It has been suggested that the tensile strain developed in the Si: P films is due to the presence of local Si3P4 clusters, which however do not contribute to the electrical conductivity. During laser annealing, the Si3P4 clusters are expected to disperse resulting in an increased conductivity while the strain reduces slightly. However, the existence of Si3P4 is not proven. Based on first-principles simulations, we demonstrate that the formation of vacancy centered Si3P4 clusters, in the form of four P atoms bonded to a Si vacancy, is thermodynamically favorable at such high P concentrations. We suggest that during post epi-growth annealing, a fraction of the P atoms from these clusters are activated, while the remaining part goes into interstitial sites, thereby reducing strain. We corroborate our conjecture experimentally using positron annihilation spectroscopy, electron spin resonance, and Rutherford backscattering ion channeling studies. (C) 2016 AIP Publishing LLC.
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000373057000023 Publication Date 2016-02-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 9 Open Access
Notes Approved Most recent IF: 3.411
Call Number UA @ lucian @ c:irua:133245 Serial 4217
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Author Idrissi, H.; Renard, K.; Ryelandt, L.; Schryvers, D.; Jacques, P.J.
Title (up) On the mechanism of twin formation in FeMnC TWIP steels Type A1 Journal article
Year 2010 Publication Acta materialia Abbreviated Journal Acta Mater
Volume 58 Issue 7 Pages 2464-2476
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Although it is well known that FeMnC TWIP steels exhibit high work-hardening rates, the elementary twinning mechanisms controlling the plastic deformation of these steels have still not been characterized. The aim of the present study is to analyse the extended defects related to the twinning occurrence using transmission electron microscopy. Based on these observations, the very early stage of twin nucleation can be attributed to the pole mechanism with deviation proposed by Cohen and Weertman or to the model of Miura, Takamura and Narita, while the twin growth is controlled by the pole mechanism proposed by Venables. High densities of sessile Frank dislocations are observed within the twins at the early stage of deformation, which can affect the growth and the stability of the twins, but also the strength of these twins and their interactions with the gliding dislocations present in the matrix. This experimental evidence is discussed and compared to recent results in order to relate the defects analysis to the macroscopic behaviour of this category of material.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000276523200018 Publication Date 2010-01-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6454; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.301 Times cited 244 Open Access
Notes Iap Approved Most recent IF: 5.301; 2010 IF: 3.791
Call Number UA @ lucian @ c:irua:82270 Serial 2441
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title (up) On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope Type A1 Journal article
Year 1998 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A
Volume 77 Issue 2 Pages 423-435
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000071976400010 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 23 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29671 Serial 2440
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Author Vleugels, G.; Dewolfs, R.; Van Grieken, R.
Title (up) On the memory effect of limestone for air pollution Type A1 Journal article
Year 1993 Publication Atmospheric environment: part A : general topics Abbreviated Journal
Volume 27 Issue Pages 1931-1934
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1993LX59700015 Publication Date 2003-08-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0960-1686; 1878-2124 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:6125 Serial 8331
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Author Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K.
Title (up) On the nature of ferromagnetism in dilute magnetic semiconductors : GaAs:Mn and GaP:Mn Type A1 Journal article
Year 2003 Publication Journal of magnetism and magnetic materials T2 – 2nd Moscow International Symposium on Magnetism (MISM 2001), JUN 20-24, 2001, MOSCOW STATE UNIV, MOSCOW, RUSSIA Abbreviated Journal J Magn Magn Mater
Volume 258 Issue Pages 237-240
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn. (C) 2002 Published by Elsevier Science B.V.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000181702000062 Publication Date 2003-03-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-8853; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.63 Times cited 10 Open Access
Notes Approved Most recent IF: 2.63; 2003 IF: 0.910
Call Number UA @ lucian @ c:irua:103311 Serial 2442
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Author Krstajic, P.M.; Ivanov, V.A.; Peeters, F.M.; Fleurov, V.; Kikoin, K.
Title (up) On the nature of ferromagnetism in diluted magnetic semiconductors : GaAs:Mn Type A1 Journal article
Year 2003 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 61 Issue 2 Pages 235-241
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p-type III-V DMS is governed by the strong hybridization of Mn2+-electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system.
Address
Corporate Author Thesis
Publisher Place of Publication Paris Editor
Language Wos 000180283200015 Publication Date 2003-12-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 38 Open Access
Notes Approved Most recent IF: 1.957; 2003 IF: 2.075
Call Number UA @ lucian @ c:irua:103318 Serial 2443
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Author Marteleur, M.; Idrissi, H.; Amin-Ahmadi, B.; Prima, F.; Schryvers, D.; Jacques, P.J.
Title (up) On the nucleation mechanism of {112} < 111 > mechanical twins in as-quenched beta metastable Ti-12 wt.% Mo alloy Type A1 Journal article
Year 2019 Publication Materialia Abbreviated Journal
Volume 7 Issue Pages Unsp 100418
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Recently developed beta-metastable Ti grades take advantage of the simultaneous activation of TRIP and TWIP effects for enhancing their work hardening rate. However, the role of each plasticity mechanism on the macroscopic mechanical response is still unclear. In this work, the nucleation mechanism of the first activated plasticity mechanism, namely {112} < 111 > twinning, was investigated. Firstly, post-mortem TEM analysis showed that twins nucleate on pre-existing microstructural defects such as thermal jogs with the zonal dislocation mechanism. The precipitation of the omega phase on twin boundaries has been observed, as well as the emission of numerous dislocations from super-jogs present in these twin boundaries. It is also shown that {112} < 111 > twins act as effective dislocation sources for the subsequent plasticity mechanisms such as beta -> alpha '' martensitic transformation and {332} < 111 > twinning. Secondly, in situ TEM tensile testing of the investigated Ti grade highlighted the primary role of the initial defect configuration present in the microstructure. It is shown that twins cannot nucleate without the presence of specific defects allowing the triggering of the dislocation decomposition needed for the twinning mechanism highlighted in investigated bulk samples.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000537131000052 Publication Date 2019-07-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2589-1529 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:170326 Serial 6875
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Author Proost, J.; Blaffart, F.; Turner, S.; Idrissi, H.
Title (up) On the Origin of Damped Electrochemical Oscillations at Silicon Anodes (Revisited) Type A1 Journal article
Year 2014 Publication ChemPhysChem : a European journal of chemical physics and physical chemistry Abbreviated Journal Chemphyschem
Volume 15 Issue 14 Pages 3116-3124
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Electrochemical oscillations accompanying the formation of anodic silica have been shown in the past to be correlated with rather abrupt changes in the mechanical stress state of the silica film, commonly associated with some kind of fracture or porosification of the oxide. To advance the understanding on the origin of such oscillations in fluoride-free electrolytes, we have revisited a seminal experiment reported by Lehmann almost two decades ago. We thereby demonstrate that the oscillations are not stress-induced, and do not originate from a morphological transformation of the oxide in the course of anodisation. Alternatively, the mechanical features accompanying the oscillations can be explained by a partial relaxation of the field-induced electrostrictive stress. Furthermore, our observations suggest that the oscillation mechanism more likely results from a periodic depolarisation of the anodic silica.
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000342770500029 Publication Date 2014-08-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1439-4235; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.075 Times cited 5 Open Access
Notes Approved Most recent IF: 3.075; 2014 IF: 3.419
Call Number UA @ lucian @ c:irua:121086 Serial 2444
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Author Drijkoningen, S.; Pobedinskas, P.; Korneychuk, S.; Momot, A.; Balasubramaniam, Y.; Van Bael, M.K.; Turner, S.; Verbeeck, J.; Nesladekt, M.; Haenen, K.
Title (up) On the Origin of Diamond Plates Deposited at Low Temperature Type A1 Journal article
Year 2017 Publication Crystal growth & design Abbreviated Journal Cryst Growth Des
Volume 17 Issue 8 Pages 4306-4314
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The crucial requirement for diamond growth at low temperatures, enabling a wide range of new applications, is a high plasma density at a low gas pressure, which leads to a low thermal load onto sensitive substrate materials. While these conditions are not within reach for resonance cavity plasma systems, linear antenna microwave delivery systems allow the deposition of high quality diamond films at temperatures around 400 degrees C and at pressures below 1 mbar. In this work the codeposition of high quality plates and octahedral diamond grains in nanocrystalline films is reported. In contrast to previous reports claiming the need for high temperatures (T >= 850 degrees C), low temperatures (320 degrees C <= T <= 410 degrees C) were sufficient to deposit diamond plate structures. Cross-sectional high resolution transmission electron microscopy studies show that these plates are faulty cubic diamond terminated by large {111} surface facets with very little sp(2) bonded carbon in the grain boundaries. Raman and electron energy loss spectroscopy studies confirm a high diamond quality, above 93% sp(3) carbon content. Three potential mechanisms, that can account for the initial development of the observed plates rich with stacking faults, and are based on the presence of impurities, are proposed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000407089600031 Publication Date 2017-06-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1528-7483 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.055 Times cited 23 Open Access Not_Open_Access
Notes ; The Research Foundation – Flanders (FWO) is gratefully acknowledged for financial support in the form of the Postdoctoral Fellowships of P.P. and S.T., contract G.0044.13N “Charge ordering” (S.K., J.V.), the Methusalem “Nano” network, and the Hercules-linear antenna and Raman equipment. ; Approved Most recent IF: 4.055
Call Number UA @ lucian @ c:irua:145735UA @ admin @ c:irua:145735 Serial 4746
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Author Sels, D.; Brosens, F.; Magnus, W.
Title (up) On the path integral representation of the Wigner function and the BarkerMurray ansatz Type A1 Journal article
Year 2012 Publication Physics letters : A Abbreviated Journal Phys Lett A
Volume 376 Issue 6/7 Pages 809-812
Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT)
Abstract The propagator of the Wigner function is constructed from the WignerLiouville equation as a phase space path integral over a new effective Lagrangian. In contrast to a paper by Barker and Murray (1983) [1], we show that the path integral can in general not be written as a linear superposition of classical phase space trajectories over a family of non-local forces. Instead, we adopt a saddle point expansion to show that the semiclassical Wigner function is a linear superposition of classical solutions for a different set of non-local time dependent forces. As shown by a simple example the specific form of the path integral makes the formulation ideal for Monte Carlo simulation.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000301167300005 Publication Date 2012-01-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0375-9601; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.772 Times cited 7 Open Access
Notes ; ; Approved Most recent IF: 1.772; 2012 IF: 1.766
Call Number UA @ lucian @ c:irua:94006 Serial 2445
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Author Schryvers, D.; Tanner, L.E.
Title (up) On the phase-like nature of the 7m structure in ni-al Type P1 Proceeding
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 849-852
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1994BC69J00183 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 18 Series Issue A B Edition
ISSN 0-444-81995-9 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:95935 Serial 2446
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Author Schryvers, D.; Tanner, L.E.
Title (up) On the phase-like nature of the 7M structure in Ni-Al Type A3 Journal article
Year 1993 Publication MRS Japan: shape memory materials Abbreviated Journal
Volume 18 Issue B Pages 849-852
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BC69J00183 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:48356 Serial 2447
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