Author |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. |
A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Shayesteh, S.F. |
A first-principles study of C3N nanostructures : control and engineering of the electronic and magnetic properties of nanosheets, tubes and ribbons |
2020 |
Chemphyschem |
21 |
27 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Ghergherehchi, M.; Shayesteh, S.F. |
A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet |
2020 |
Carbon |
157 |
49 |
UA library record; WoS full record; WoS citing articles |
Obeid, M.M.; Bafekry, A.; Rehman, S.U.; Nguyen, C., V. |
A type-II GaSe/HfS₂ van der Waals heterostructure as promising photocatalyst with high carrier mobility |
2020 |
Applied Surface Science |
534 |
4 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Faraji, M.; Ziabari, A.A.; Fadlallah, M.M.; Nguyen, C., V; Ghergherehchi, M.; Feghhi, S.A.H. |
A van der Waals heterostructure of MoS₂/MoSi₂N₄ : a first-principles study |
2021 |
New Journal Of Chemistry |
45 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Mortazavi, B.; Faraji, M.; Shahrokhi, M.; Shafique, A.; Jappor, H.R.; Nguyen, C.; Ghergherehchi, M.; Feghhi, S.A.H. |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb₂X₃ (X= S, Se, Te) monolayers with orthorhombic structure |
2021 |
Scientific Reports |
11 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Faraji, M.; Fadlallah, M.M.; Ziabari, A.A.; Khatibani, A.B.; Feghhi, S.A.H.; Ghergherehchi, M.; Gogova, D. |
Adsorption of habitat and industry-relevant molecules on the MoSi₂N₄ monolayer |
2021 |
Applied Surface Science |
564 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Ghergherehchi, M.; Shayesteh, S.F.; Peeters, F.M. |
Adsorption of molecules on C3N nanosheet : a first-principles calculations |
2019 |
Chemical physics |
526 |
52 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Mortazavic, B.; Shayesteh, S.F. |
Band gap and magnetism engineering in Dirac half-metallic Na2C nanosheet via layer thickness, strain and point defects |
2019 |
Journal of magnetism and magnetic materials |
491 |
13 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Shayesteh, S.F.; Peeters, F.M. |
C3N Monolayer: Exploring the Emerging of Novel Electronic and Magnetic Properties with Adatom Adsorption, Functionalizations, Electric Field, Charging, and Strain |
2019 |
The journal of physical chemistry: C : nanomaterials and interfaces |
123 |
81 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Akgenc, B.; Ghergherehchi, M. |
Control of C3N4 and C4N3 carbon nitride nanosheets' electronic and magnetic properties through embedded atoms |
2020 |
Physical Chemistry Chemical Physics |
22 |
18 |
UA library record; WoS full record; WoS citing articles |
Hoat, D.M.; Duy Khanh Nguyen; Bafekry, A.; Vo Van On; Ul Haq, B.; Hoang, D.-Q.; Cocoletzi, G.H.; Rivas-Silva, J.F. |
Developing feature-rich electronic and magnetic properties in the beta-As monolayer for spintronic and optoelectronic applications by C and Si doping : a first-principles study |
2021 |
Surfaces and interfaces |
27 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Peeters, F.M. |
Dirac half-metallicity of thin PdCl₃ nanosheets : investigation of the effects of external fields, surface adsorption and defect engineering on the electronic and magnetic properties |
2020 |
Scientific Reports |
10 |
29 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Naseri, M.; Fadlallah, M.M.; Faraji, M.; Ghergherehchi, M.; Gogova, D.; Feghhi, S.A.H. |
Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer : a first-principles calculation |
2021 |
Journal Of Applied Physics |
129 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Yagmurcukardes, M.; Shahrokhi, M.; Ghergherehchi, M.; Kim, D.; Mortazavi, B. |
Electro-optical and mechanical properties of Zinc antimonide (ZnSb) monolayer and bilayer : a first-principles study |
2021 |
Applied Surface Science |
540 |
1 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Yagmurcukardes, M.; Shahrokhi, M.; Ghergherehchi, M. |
Electro-optical properties of monolayer and bilayer boron-doped C₃N: Tunable electronic structure via strain engineering and electric field |
2020 |
Carbon |
168 |
21 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. |
Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Gogova, D.; M. Fadlallah, M.; V. Chuong, N.; Ghergherehchi, M.; Faraji, M.; Feghhi, S.A.H.; Oskoeian, M. |
Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials |
2021 |
Physical Chemistry Chemical Physics |
23 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Akgenc, B.; Mortazavi, B.; Ghergherehchi, M.; Nguyen, C.V. |
Embedding of atoms into the nanopore sites of the C₆N₆ and C₆N₈ porous carbon nitride monolayers with tunable electronic properties |
2020 |
Physical Chemistry Chemical Physics |
22 |
17 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Shayesteh, S.F.; Peeters, F.M. |
Exploiting the novel electronic and magnetic structure of C3Nvia functionalization and conformation |
2019 |
Advanced Electronic Materials |
5 |
39 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Yagmurcukardes, M.; Akgenc, B.; Ghergherehchi, M.; Mortazavi, B. |
First-principles investigation of electronic, mechanical and thermoelectric properties of graphene-like XBi (X = Si, Ge, Sn) monolayers |
2021 |
Physical Chemistry Chemical Physics |
23 |
|
UA library record; WoS full record; WoS citing articles |
Obeid, M.M.; Stampfl, C.; Bafekry, A.; Guan, Z.; Jappor, H.R.; Nguyen, C., V; Naseri, M.; Hoat, D.M.; Hieu, N.N.; Krauklis, A.E.; Tuan V Vu; Gogova, D. |
First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate |
2020 |
Physical Chemistry Chemical Physics |
22 |
18 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Obeid, M.; Nguyen, C.; Bagheri Tagani, M.; Ghergherehchi, M. |
Graphene hetero-multilayer on layered platinum mineral Jacutingaite (Pt₂HgSe₃): Van der Waals heterostructures with novel optoelectronic and thermoelectric performances |
2020 |
Journal Of Materials Chemistry A |
8 |
20 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A. |
Graphene-like BC₆N single-layer: tunable electronic and magnetic properties via thickness, gating, topological defects, and adatom/molecule |
2020 |
Physica E-Low-Dimensional Systems & Nanostructures |
118 |
30 |
UA library record; WoS full record; WoS citing articles |
Nguyen, H.T.T.; Obeid, M.M.; Bafekry, A.; Idrees, M.; Vu, T.V.; Phuc, H., V; Hieu, N.N.; Le Hoa, T.; Amin, B.; Nguyen, C., V |
Interfacial characteristics, Schottky contact, and optical performance of a graphene/Ga2SSe van der Waals heterostructure: Strain engineering and electric field tunability |
2020 |
Physical Review B |
102 |
12 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Shayesteh, S.F.; Peeters, F.M. |
Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution |
2019 |
Physical chemistry, chemical physics |
21 |
59 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Nguyen, C., V; Goudarzi, A.; Ghergherehchi, M.; Shafieirad, M. |
Investigation of strain and doping on the electronic properties of single layers of C₆N₆ and C₆N₈: a first principles study |
2020 |
Rsc Advances |
10 |
11 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A. |
Investigation of the effects of defects and impurities on nanostructures consisting of Group IV and V elements using First-principles calculations |
2020 |
|
|
|
UA library record |
Bafekry, A.; Nguyen, C.; Obeid, M.M.; Ghergherehchi, M. |
Modulating the electro-optical properties of doped C₃N monolayers and graphene bilayersviamechanical strain and pressure |
2020 |
New Journal Of Chemistry |
44 |
7 |
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Faraji, M.; Hoat, D.M.; Shahrokhi, M.; Fadlallah, M.M.; Shojaei, F.; Feghhi, S.A.H.; Ghergherehchi, M.; Gogova, D. |
MoSi₂N₄ single-layer : a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties |
2021 |
Journal Of Physics D-Applied Physics |
54 |
|
UA library record; WoS full record; WoS citing articles |