Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
He, Z.; Tian, H.; Deng, G.; Xu, Q.; Van Tendeloo, G. |
Microstructure of bilayer manganite PrCa2Mn2O7 showing charge/orbital ordering |
2013 |
Applied physics letters |
102 |
4 |
UA library record; WoS full record; WoS citing articles |
van Dyck, D.; Croitoru, M.D. |
Statistical method for thickness measurement of amorphous objects |
2007 |
Applied physics letters |
90 |
4 |
UA library record; WoS full record; WoS citing articles |
Leenaerts, O.; Vercauteren, S.; Partoens, B. |
Band alignment of lateral two-dimensional heterostructures with a transverse dipole |
2017 |
Applied physics letters |
110 |
4 |
UA library record; WoS full record; WoS citing articles |
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
Yu, Y.; Xie, X.; Liu, X.; Li, J.; Peeters, F.M.; Li, L. |
Two-dimensional semimetal states in transition metal trichlorides : a first-principles study |
2022 |
Applied physics letters |
121 |
4 |
UA library record; WoS full record |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
Zhang, Q.-Z.; Tinck, S.; de Marneffe, J.-F.; Zhang, L.; Bogaerts, A. |
Mechanisms for plasma cryogenic etching of porous materials |
2017 |
Applied physics letters |
111 |
2 |
UA library record; WoS full record; WoS citing articles |
Zarenia, M.; Conti, S.; Peeters, F.M.; Neilson, D. |
Coulomb drag in strongly coupled quantum wells : temperature dependence of the many-body correlations |
2019 |
Applied physics letters |
115 |
2 |
UA library record; WoS full record; WoS citing articles |
Frabboni, S.; Grillo, V.; Gazzadi, G.C.; Balboni, R.; Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Guzzinati, G.; Glas, F.; |
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures |
2012 |
Applied physics letters |
101 |
1 |
UA library record; WoS full record; WoS citing articles |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
Čukarić, N.A.; Tadić, M.Z.; Partoens, B.; Peeters, F.M. |
The interband optical absorption in silicon quantum wells : application of the 30-band k . p model |
2014 |
Applied physics letters |
104 |
1 |
UA library record; WoS full record; WoS citing articles |
Maignan, A.; Lebedev, O.I.; Van Tendeloo, G.; Martin, C.; Hébert, S. |
Negative magnetoresistance in a V3+/V4+ mixed valent vanadate |
2010 |
Applied physics letters |
96 |
|
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy |
2012 |
Applied Physics Letters |
100 |
|
UA library record; WoS full record; WoS citing articles |
Guo, J.; Clima, S.; Pourtois, G.; Van Houdt, J. |
Identifying alternative ferroelectric materials beyond Hf(Zr)O-₂ |
2020 |
Applied Physics Letters |
117 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. |
A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. |
Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |