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Records |
Links |
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Author |
Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G. |
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Title |
Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Journal of alloys and compounds
T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
J Alloy Compd |
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Volume |
251 |
Issue |
1-2 |
Pages |
206-208 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier Science |
Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1997XM34000046 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0925-8388; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.133 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.133; 1997 IF: 1.035 |
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Call Number |
UA @ lucian @ c:irua:95868 |
Serial |
310 |
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Permanent link to this record |
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Author |
Mortet, V.; Zhang, L.; Echert, M.; Soltani, A.; d' Haen, J.; Douheret, O.; Moreau, M.; Osswald, S.; Neyts, E.; Troadec, D.; Wagner, P.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K. |
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Title |
Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition |
Type |
A3 Journal article |
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Year |
2009 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
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Volume |
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Issue |
1203 |
Pages |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data. |
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Corporate Author |
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Publisher |
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Place of Publication |
Wuhan |
Editor |
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Language |
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Wos |
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Publication Date |
2010-03-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1946-4274; |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:81646 |
Serial |
327 |
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Permanent link to this record |
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Author |
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
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Title |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
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Volume |
4 |
Issue |
1/3 |
Pages |
109-111 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000167727200026 |
Publication Date |
2002-10-14 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1369-8001; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
2.359 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
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Call Number |
UA @ lucian @ c:irua:94967 |
Serial |
343 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
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Volume |
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Issue |
164 |
Pages |
495-498 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Wos |
000166835300106 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
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Permanent link to this record |
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Author |
Moshnyaga, V.; Damaschke, B.; Shapoval, O.; Belenchuk, A.; Faupel, J.; Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Mücksch, M.; Tsurkan, V.; Tidecks, R.; Samwer, K. |
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Title |
Corrigendum: Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Nature materials |
Abbreviated Journal |
Nat Mater |
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Volume |
4 |
Issue |
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Pages |
104 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1476-1122 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
39.737 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 39.737; 2005 IF: 15.941 |
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Call Number |
UA @ lucian @ c:irua:54856 |
Serial |
530 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
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Title |
Crystallography of fullerites and related graphene textures |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
150/151 |
Issue |
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Pages |
53-64 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1994BC12F00004 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10001 |
Serial |
590 |
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Permanent link to this record |
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Author |
Kalitzova, M.; Lebedev, O.I.; Zollo, G.; Gesheva, K.; Vlakhov, E.; Marinov, Y.; Ivanova, T.; |
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Title |
Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Applied physics A : materials science & processing |
Abbreviated Journal |
Appl Phys A-Mater |
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Volume |
91 |
Issue |
3 |
Pages |
515-519 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Heidelberg |
Editor |
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Language |
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Wos |
000255089300027 |
Publication Date |
2008-03-13 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0947-8396;1432-0630; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.455 |
Times cited |
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Open Access |
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Notes |
Iuap Vi |
Approved |
Most recent IF: 1.455; 2008 IF: 1.884 |
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Call Number |
UA @ lucian @ c:irua:69129 |
Serial |
780 |
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Permanent link to this record |
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Author |
Milat, O.; Van Tendeloo, G.; Amelinckx, S.; Wright, A.J.; Greaves, C. |
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Title |
Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Chemistry of materials |
Abbreviated Journal |
Chem Mater |
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Volume |
7 |
Issue |
9 |
Pages |
1709-1715 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
A1995RW21200021 |
Publication Date |
2005-03-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0897-4756;1520-5002; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
8.354 |
Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13326 |
Serial |
850 |
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Permanent link to this record |
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Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
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Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
415-418 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
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Permanent link to this record |
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Author |
Avetisyan, A.A.; Partoens, B.; Peeters, F.M. |
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Title |
Electric field tuning of the band gap in four layers of graphene with different stacking order |
Type |
P1 Proceeding |
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Year |
2012 |
Publication |
Proceedings of the Society of Photo-optical Instrumentation Engineers
T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
84140-84148 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000303856600012 |
Publication Date |
2012-01-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
8414 |
Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; |
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:113046 |
Serial |
886 |
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Permanent link to this record |
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Author |
Ghica, C.; Enculescu, I.; Nistor, L.C.; Matei, E.; Van Tendeloo, G. |
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Title |
Electrochemical growth and characterization of nanostructured ZnO thin films |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Journal of optoelectronics and advanced materials |
Abbreviated Journal |
J Optoelectron Adv M |
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Volume |
10 |
Issue |
12 |
Pages |
3237-3240 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
ZnO is a wide band-gap (ca. 3.4 eV) semiconductor, piezoelectric, pyroelectric, biocompatible, transparent in the visible spectrum and UV light emitting material. The fabrication in 2001 of the first nanobelts of semiconductor oxide materials lead to a rapid expansion of researches concerning one dimensional nanostructures (nanotubes, nanowires, nanobelts), given their possible application in optics, optoelectronics, piezoelectricity, catalysis. Researches carried on up to date evidenced the possibility to obtain an extraordinary variety of ZnO nanostructures, in function of the experimental parameters and the used growth methods. In this work we present morphostructural results on nanostructured ZnO layers obtained by electrochemical deposition. The films have been grown on gold covered glass plates and Si wafers, in various experimental conditions such as: nature of the wetting agents, electrical polarization of the substrate (continuous, pulsed). The influence of the growth conditions on the crystalline structure and morphology of the films is revealed by scanning and transmission electron microscopy studies. The films show a variety of growth morphologies, from entangled-wires-like to honeycomb-like layers. These large-specific-surface layers will be tested as nanostructured substrates for photovoltaic cells with improved efficiency. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Bucharest |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1454-4164 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
0.449 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 0.449; 2008 IF: 0.577 |
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Call Number |
UA @ lucian @ c:irua:75746 |
Serial |
899 |
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Permanent link to this record |
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Author |
Colomer, J.-F.; Henrard, L.; Lambin, P.; Van Tendeloo, G. |
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Title |
Electron diffraction of nanotubes bundles : unique helicity and tube-tube atomically coherent packing |
Type |
P1 Proceeding |
|
Year |
2002 |
Publication |
AIP conference proceedings
T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
314-317 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
The atomic structure of single-wall carbon nanotube bundles produced by three different techniques has been characterized by electron diffraction and microscopy. Small bundles produced by Catalytical Chemical Vapor Deposition (CCVD) exhibit only one or two tube chiralities within a single bundle while bundles produced by arc-discharge or laser-ablation exhibit more chiralities. A detailed analysis of the central line of diffraction is also presented. The CCVD nanotubes present more intense spots around 1.7 Angstrom(-1) < k < 2Angstrom(-1) (k is the momentum transfer) compared to what is observed for nanotubes produced by other methods. Amongst the possible explanation for such an anomaly, we put forward that in this range of momentum transfer, the relative tube orientations and translations are important for what concerns the interpretation of the diffraction peaks intensities. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York |
Editor |
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|
|
Language |
|
Wos |
000178866600070 |
Publication Date |
2003-02-26 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
633 |
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7354-0088-1; 0094-243x |
ISBN |
|
Additional Links |
UA library record; WoS full record |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:104172 |
Serial |
921 |
|
Permanent link to this record |
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|
|
Author |
Van Tendeloo, G.; Amelinckx, S. |
|
|
Title |
Electron-microscopy and the structural studies of superconducting materials and fullerites |
Type |
P1 Proceeding |
|
Year |
1994 |
Publication |
NATO Advanced Study Institutes series: series E : applied sciences
T2 – NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy |
Abbreviated Journal |
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|
|
Volume |
|
Issue |
|
Pages |
521-538 |
|
|
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Kluwer Academic |
Place of Publication |
Dordrecht |
Editor |
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Language |
|
Wos |
A1994BA54N00025 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
263 |
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7923-2773-X |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
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|
Notes |
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Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95934 |
Serial |
949 |
|
Permanent link to this record |
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|
Author |
Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E. |
|
|
Title |
EM study of twinning in the Ni5Al3 bainitic phase |
Type |
A3 Journal article |
|
Year |
1993 |
Publication |
Twinning in advanced materials |
Abbreviated Journal |
|
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Volume |
|
Issue |
|
Pages |
395-402 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
|
Editor |
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Language |
|
Wos |
A1994BB13P00037 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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|
Call Number |
UA @ lucian @ c:irua:48358 |
Serial |
1031 |
|
Permanent link to this record |
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Author |
Saniz, R.; Barbiellini, B.; Denison, A.B.; Bansil, A. |
|
|
Title |
Erratum: Spontaneous magnetization and electron momentum density in three-dimensional quantum dots [Phys. Rev. B 68, 165326 (2003)] |
Type |
A1 Journal article |
|
Year |
2011 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
|
Volume |
84 |
Issue |
11 |
Pages |
119907 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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|
Abstract |
|
|
|
Address |
|
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Wos |
000295263600015 |
Publication Date |
2011-09-28 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1098-0121;1550-235X; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
3.836 |
Times cited |
|
Open Access |
|
|
|
Notes |
; ; |
Approved |
Most recent IF: 3.836; 2011 IF: 3.691 |
|
|
Call Number |
UA @ lucian @ c:irua:92919 |
Serial |
1081 |
|
Permanent link to this record |
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Author |
Mishra, R.S.K.; Pandey, D.; Lemmens, H.; Van Tendeloo, G. |
|
|
Title |
Evidence for another low-temperature phase transition in tetragonal Pb(ZrxTi1-x)O3 (x=0.515,0.520) |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
|
Volume |
64 |
Issue |
5 |
Pages |
054104 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Lancaster, Pa |
Editor |
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Language |
|
Wos |
000170267000028 |
Publication Date |
2002-07-27 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0163-1829;1095-3795; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.836 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.836; 2001 IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:103407 |
Serial |
1093 |
|
Permanent link to this record |
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Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
|
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Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
169 |
Pages |
53-56 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
IOP Publishing |
Place of Publication |
Bristol |
Editor |
|
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
|
Permanent link to this record |
|
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|
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Author |
Veljkovic, D.; Tadić, M.; Peeters, F.M. |
|
|
Title |
Intersublevel absorption in stacked n-type doped self-assembled quantum dots |
Type |
A1 Journal article |
|
Year |
2005 |
Publication |
Materials science forum |
Abbreviated Journal |
Mater Sci Forum |
|
|
Volume |
494 |
Issue |
|
Pages |
37-42 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:94746 |
Serial |
1715 |
|
Permanent link to this record |
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Author |
Veljkovic, D.; Tadić, M.; Peeters, F.M. |
|
|
Title |
Magnetoexcitons in type-II self-assembled quantum dots and quantum-dot superlattices |
Type |
A1 Journal article |
|
Year |
2006 |
Publication |
Recent developments in advanced materials and processes |
Abbreviated Journal |
|
|
|
Volume |
518 |
Issue |
|
Pages |
51-56 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:60841 |
Serial |
1918 |
|
Permanent link to this record |
|
|
|
|
Author |
Partoens, B.; Matulis, A.; Peeters, F.M. |
|
|
Title |
Magnetoplasma excitations in vertically coupled quantum dot systems |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Materials science forum |
Abbreviated Journal |
Mater Sci Forum |
|
|
Volume |
297/298 |
Issue |
|
Pages |
225-228 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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|
Abstract |
|
|
|
Address |
|
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Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
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Language |
|
Wos |
000080081600043 |
Publication Date |
0000-00-00 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:24176 |
Serial |
1920 |
|
Permanent link to this record |
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|
|
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Author |
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R. |
|
|
Title |
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography |
Type |
A1 Journal article |
|
Year |
2005 |
Publication |
Microscopy of Semiconducting Materials |
Abbreviated Journal |
|
|
|
Volume |
107 |
Issue |
|
Pages |
303-306 |
|
|
Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT) |
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Abstract |
|
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Berlin |
Editor |
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Language |
|
Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
SPRINGER PROCEEDINGS IN PHYSICS |
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0930-8989 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:72914 |
Serial |
1962 |
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Permanent link to this record |
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Author |
Hervieu, M.; Michel, C.; Martin, C.; Huvé, M.; Van Tendeloo, G.; Maignan, A.; Pelloquin, D.; Goutenoire, F.; Raveau, B. |
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Title |
Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à haute Tc |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation |
Abbreviated Journal |
|
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Volume |
4 |
Issue |
|
Pages |
2057-2067 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Les Ulis |
Editor |
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Language |
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Wos |
A1994PT17900002 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
1155-4320 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
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Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:10041 |
Serial |
1973 |
|
Permanent link to this record |
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Author |
Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. |
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Title |
A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films |
Type |
A1 Journal article |
|
Year |
2003 |
Publication |
Institute of physics conference series
T2 – Microscopy of semiconducting materials |
Abbreviated Journal |
|
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Volume |
|
Issue |
|
Pages |
397-400 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Iop |
Place of Publication |
Cambridge |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0979-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:54860 |
Serial |
2048 |
|
Permanent link to this record |
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|
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Author |
Verbist, K.; Tafuri, F.; Granozio, F.M.; Di Chiara, S.; Van Tendeloo, G. |
|
|
Title |
Microstructure of artificial [100] 45 degrees twist grain boundaries in YBa2Cu3O7-delta |
Type |
P1 Proceeding |
|
Year |
1998 |
Publication |
Electron Microscopy 1998, Vol 2: Materials Science 1 |
Abbreviated Journal |
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|
Volume |
|
Issue |
|
Pages |
593-594 |
|
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
|
Editor |
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Language |
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Wos |
000077019900291 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0565-7 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:104356 |
Serial |
2066 |
|
Permanent link to this record |
|
|
|
|
Author |
Nikolaev, A.V.; Michel, K.H. |
|
|
Title |
Molecular terms and optical transitions of C60n+/- molecular ions |
Type |
P1 Proceeding |
|
Year |
2002 |
Publication |
AIP conference proceedings
T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
417-420 |
|
|
Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
|
|
Abstract |
We have studied the molecular energy terms of the hole configurations (h(u)(+))(m), m=2,3,4,5 of C-60(m+) cations and the electronic configurations (t(1u))(n) n=2,3,4, as well as (t(1u))(n-1)t(1g) of the C-60(n-) anions. The lowest terms (within an energy span of 0.03 eV) for C-60(2+) are three triplets T-3(1g), (3)G(g), T-3(2g) and for C-60(3+) are three quartets T-4(1u), (4)G(u), T-4(2u), which favor Jahn-Teller distortions. For the ground state of C-60(2-) we find a triplet T-3(1g) in agreement with Hund's rules. Our method takes into account intramolecular direct and exchange multipolar Coulomb interactions. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
New York |
Editor |
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
633 |
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7354-0088-1 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103905 |
Serial |
2187 |
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Permanent link to this record |
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Author |
Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P. |
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Title |
Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen |
Type |
A1 Journal article |
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Year |
2015 |
Publication |
Physica status solidi : A : applications and materials science |
Abbreviated Journal |
Phys Status Solidi A |
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Volume |
212 |
Issue |
212 |
Pages |
1191-1201 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000356706500003 |
Publication Date |
2015-04-21 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1862-6300; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.775 |
Times cited |
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Open Access |
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Notes |
Methusalem project NANO; FWO; 246791 COUNTATOMS |
Approved |
Most recent IF: 1.775; 2015 IF: 1.616 |
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Call Number |
c:irua:126732 |
Serial |
2204 |
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Permanent link to this record |
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Author |
Cheng, J.P.; Zhang, X.B.; Ye, Y.; Tao, X.Y.; Liu, F.; Li, Y.; Van Tendeloo, G. |
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Title |
Natural mineral-marine manganese nodule as a novel catalyst for the synthesis of carbon nanotubes |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
Journal of Wuhan University of Technology: materials science edition |
Abbreviated Journal |
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Volume |
21 |
Issue |
1 |
Pages |
29-31 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:57740 |
Serial |
2286 |
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Permanent link to this record |
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Author |
Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E. |
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Title |
Nucleation and growth of Ni5Al3 in austenite and martensite matrices |
Type |
P1 Proceeding |
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Year |
1994 |
Publication |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
509-510 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
A1994BE09Y00247 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2-86883-226-1 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:104476 |
Serial |
2386 |
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Permanent link to this record |
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Author |
Neyts, E.C.; Bogaerts, A. |
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Title |
Numerical study of the size-dependent melting mechanisms of nickel nanoclusters |
Type |
A1 Journal article |
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Year |
2009 |
Publication |
The journal of physical chemistry: C : nanomaterials and interfaces |
Abbreviated Journal |
J Phys Chem C |
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Volume |
113 |
Issue |
7 |
Pages |
2771-2776 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Molecular dynamics simulations were used to investigate the size-dependent melting mechanism of nickel nanoclusters of various sizes. The melting process was monitored by the caloric curve, the overall cluster Lindemann index, and the atomic Lindemann index. Size-dependent melting temperatures were determined, and the correct linear dependence on inverse diameter was recovered. We found that the melting mechanism gradually changes from dynamic coexistence melting to surface melting with increasing cluster size. These findings are of importance in better understanding carbon nanotube growth by catalytic chemical vapor deposition as the phase state of the catalyst nanoparticle codetermines the growth mechanism. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1932-7447 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
4.536 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 4.536; 2009 IF: 4.224 |
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Call Number |
UA @ lucian @ c:irua:76495 |
Serial |
2410 |
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Permanent link to this record |
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Author |
Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. |
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Title |
Ordering and defects in BanTaxTiyO3n ternary oxides |
Type |
P1 Proceeding |
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Year |
1994 |
Publication |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
869-870 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
A1994BE09Y00422 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2-86883-226-1 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:104477 |
Serial |
2504 |
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Permanent link to this record |