|
Author |
Title |
Year |
Publication |
Volume |
Times cited ![sorted by Times cited field, ascending order (up)](img/sort_asc.gif) |
Additional Links |
Links |
|
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
|
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
|