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Author |
Ke, X.; Bals, S.; Romo Negreira, A.; Hantschel, T.; Bender, H.; Van Tendeloo, G. |
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Title |
TEM sample preparation by FIB for carbon nanotube interconnects |
Type |
A1 Journal article |
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Year |
2009 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
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Volume |
109 |
Issue |
11 |
Pages |
1353-1359 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A powerful method to study carbon nanotubes (CNTs) grown in patterned substrates for potential interconnects applications is transmission electron microscopy (TEM). However, high-quality TEM samples are necessary for such a study. Here, TEM specimen preparation by focused ion beam (FIB) has been used to obtain lamellae of patterned samples containing CNTs grown inside contact holes. A dual-cap Pt protection layer and an extensive 5 kV cleaning procedure are applied in order to preserve the CNTs and avoid deterioration during milling. TEM results show that the inner shell structure of the carbon nanotubes has been preserved, which proves that focused ion beam is a useful technique to prepare TEM samples of CNT interconnects. |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000270765800006 |
Publication Date |
2009-07-11 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.843 |
Times cited  |
21 |
Open Access |
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Notes |
Esteem 026019; Iap |
Approved |
Most recent IF: 2.843; 2009 IF: 2.067 |
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Call Number |
UA @ lucian @ c:irua:79074 |
Serial |
3485 |
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Author |
Ke, X.; Bals, S.; Cott, D.; Hantschel, T.; Bender, H.; Van Tendeloo, G. |
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Title |
Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Microscopy and microanalysis |
Abbreviated Journal |
Microsc Microanal |
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Volume |
16 |
Issue |
2 |
Pages |
210-217 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The three-dimensional (3D) distribution of carbon nanotubes (CNTs) grown inside semiconductor contact holes is studied by electron tomography. The use of a specialized tomography holder results in an angular tilt range of ±90°, which means that the so-called missing wedge is absent. The transmission electron microscopy (TEM) sample for this purpose consists of a micropillar that is prepared by a dedicated procedure using the focused ion beam (FIB) but keeping the CNTs intact. The 3D results are combined with energy dispersive X-ray spectroscopy (EDS) to study the relation between the CNTs and the catalyst particles used during their growth. The reconstruction, based on the full range of tilt angles, is compared with a reconstruction where a missing wedge is present. This clearly illustates that the missing wedge will lead to an unreliable interpretation and will limit quantitative studies |
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Publisher |
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Place of Publication |
Cambridge, Mass. |
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Wos |
000276137200011 |
Publication Date |
2010-02-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1431-9276;1435-8115; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.891 |
Times cited |
42 |
Open Access |
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Notes |
Esteem 026019; Fwo; Iap-Vi |
Approved |
Most recent IF: 1.891; 2010 IF: 3.259 |
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Call Number |
UA @ lucian @ c:irua:82279 |
Serial |
3642 |
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Author |
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
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Title |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
77 |
Issue |
4 |
Pages |
507-509 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X]. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000088225400016 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
44 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
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Call Number |
UA @ lucian @ c:irua:103448 |
Serial |
712 |
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Author |
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
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Title |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
90 |
Issue |
1 |
Pages |
167-174 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000169361100023 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
97 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
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Call Number |
UA @ lucian @ c:irua:102855 |
Serial |
1587 |
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