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Author |
Tian, X.; Xie, X.; Li, J.; Kong, X.; Gong, W.-J.; Peeters, F.M.; Li, L. |
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Title |
Multiferroic ScLaX₂ (X = P, As, and Sb) monolayers : bidirectional negative Poisson's ratio effects and phase transformations driven by rare-earth (main-group) elements |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
8 |
Pages |
084407-84411 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The combination of auxetic property, ferroelasticity, and ferroelectricity in two-dimensional materials offers new avenues for next-generation multifunctional devices. However, two-dimensional materials that simultaneously exhibit those properties are rarely reported. Here, we present a class of two-dimensional Janus-like structures ScLaX2 X 2 (X X = P, As, and Sb) with a rectangular lattice based on first-principles calculations. We predict that those ScLaX2 X 2 monolayers are stable semiconductors with both intrinsic in-plane and out-of-plane auxetic properties, showing a bidirectional negative Poisson's ratio effect. The value of the out-of-plane negative Poisson's ratio effect can reach – 2.28 /- 3.06 /- 3.89. By applying uniaxial strain engineering, two transition paths can be found, including the VA main group element path and the rare-earth metal element path, corresponding to the ferroelastic and the multiferroic (ferroelastic and ferroelectric) phase transition, respectively. For the ScLaSb2 2 monolayer, the external force field can not only control the ferroelastic phase transition, but it can also lead to the reversal of the out-of-plane polarization, exhibiting potential multiferroicity. The coupling between the bidirectional negative Poisson's ratio effect and multiferroicity makes the ScLaX2 X 2 monolayers promising for future device applications. |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001293 |
Publication Date |
2024-08-13 |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited  |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:207592 |
Serial |
9306 |
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Author |
Kandemir, Z.; D'Amico, P.; Sesti, G.; Cardoso, C.; Milošević, M.V.; Sevik, C. |
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Title |
Optical properties of metallic MXene multilayers through advanced first-principles calculations |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
7 |
Pages |
075201-75210 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Having a strong electromagnetic absorption, MXene multilayers are readily envisaged for applications in electromagnetic shields and related prospective technology. However, an ab initio characterization of the optical properties of MXenes is still lacking, due in part to major difficulties with the treatment of metallicity in the first-principles approaches. Here we addressed the latter challenge, after a careful treatment of intraband transitions, to present a thorough analysis of the electronic and optical properties of a selected set of metallic MXene layers based on density functional theory (DFT) and many-body perturbation theory calculations. Our results reveal that the GW corrections are particularly important in regions of the band structure where d and p states hybridize. For some systems, we show that GW corrections open a gap between occupied states, resulting in a band structure that closely resembles that of an intrinsic transparent conductor, thereby opening an additional line of prospective applications for the MXenes family. Nevertheless, GW and Bethe-Salpeter corrections have a minimal influence on the absorption spectra, in contrast to what is typically observed in semiconductor layers. Our present results suggest that calculations within the independent particle approximation (IPA) calculations are sufficiently accurate for assessing the optical characteristics of bulk-layered MXene materials. Finally, our calculated dielectric properties and absorption spectra, in agreement with existing experimental data, confirm the potential of MXenes as effective infrared emitters. |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001275 |
Publication Date |
2024-07-22 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:207597 |
Serial |
9309 |
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Author |
Yari, S.; Bird, L.; Rahimisheikh, S.; Reis, A.C.; Mohammad, M.; Hadermann, J.; Robinson, J.; Shearing, P.R.; Safari, M. |
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Title |
Probing charge transport and microstructural attributes in solvent- versus water-based electrodes with a spotlight on Li-S battery cathode |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Advanced energy materials |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
2402163 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
In the quest for environmentally benign battery technologies, this study examines the microstructural and transport properties of water-processed electrodes and compares them to conventionally formulated electrodes using the toxic solvent, N-Methyl-2-pyrrolidone (NMP). Special focus is placed on sulfur electrodes utilized in lithium-sulfur batteries for their sustainability and compatibility with diverse binder/solvent systems. The characterization of the electrodes by X-ray micro-computed tomography reveals that in polyvinylidene fluoride (PVDF) Lithium bis(trifluoromethanesulfonyl)imide/NMP, sulfur particles tend to remain in large clusters but break down into finer particles in carboxymethyl cellulose-styrene butadiene rubber (CMC-SBR)/water and lithium polyacrylate (LiPAA)/water dispersions. The findings reveal that in the water-based electrodes, the binder properties dictate the spatial arrangement of carbon particles, resulting in either thick aggregates with short-range connectivity or thin films with long-range connectivity among sulfur particles. Additionally, cracking is found to be particularly prominent in thicker water-based electrodes, propagating especially in regions with larger particle agglomerates and often extending to cause local delamination of the electrodes. These microstructural details are shown to significantly impact the tortuosity and contact resistance of the sulfur electrodes and thereby affecting the cycling performance of the Li-S battery cells. The choice of solvent and binder is crucial in determining particle surface charge, which directly influences active material dispersion and carbon-binder arrangement within the battery porous electrodes. This, in turn, affects ionic and electronic transport properties, ultimately impacting electrochemical performance. Meticulous engineering of the slurry to control these factors is essential for efficient and sustainable water-based electrode processing. image |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001291 |
Publication Date |
2024-08-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1614-6832; 1614-6840 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
27.8 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 27.8; 2024 IF: 16.721 |
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Call Number |
UA @ admin @ c:irua:207624 |
Serial |
9311 |
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Author |
Gonzalez-Garcia, A.; Bacaksiz, C.; Frauenheim, T.; Milošević, M.V. |
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Title |
Strong spin-lattice coupling and high-temperature magnetic ordering in monolayer chromium dichalcogenides |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
6 |
Pages |
064001-64009 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We detail the magnetic properties of monolayer CrX2 and its Janus counterparts CrXY (X, Y = S, Se, Te, with X not equal Y) using ab initio methods and Landau-Lifshitz-Gilbert magnetization dynamics, and uncover the pronouncedly strong interplay between their structure symmetry and the magnetic order. The relaxation of nonmagnetic chalcogen atoms, that carry large spin-orbit coupling, changes the energetically preferential magnetic order between in-plane antiferromagnetic and tilted ferromagnetic one. The considered Janus monolayers exhibit sizable Dzyaloshinskii-Moriya interaction, in some cases above 20% of the isotropic exchange, and critical temperature of the long-range magnetic order in the vicinity or even significantly above the room temperature. |
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Wos |
001247462600001 |
Publication Date |
2024-06-13 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:206660 |
Serial |
9317 |
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Author |
Hoekx, S.; Daems, N.; Arenas Esteban, D.; Bals, S.; Breugelmans, T. |
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Title |
Toward the rational design of Cu electrocatalysts for improved performance of the NO3RR |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
ACS applied energy materials |
Abbreviated Journal |
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Volume |
7 |
Issue |
9 |
Pages |
3761-3775 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Applied Electrochemistry & Catalysis (ELCAT) |
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Abstract |
Cu is one of the most promising materials as an electrocatalyst for the nitrate reduction reaction (NO3RR) to ammonia, a reaction that can simultaneously remove nitrates from wastewater and produce ammonia, a high-value commodity chemical. However, a rational approach to catalyst design is lacking, limiting efficient catalyst optimization. In this work, we propose a way to synthesize monodisperse, polycrystalline Cu NPs with small variances in size by changing the carbon chain length of the phosphonic acid-based ligand. Cu NPs with 8.3, 10.0, and 11.9 nm diameters are successfully synthesized, and high-resolution electron microscopy and tomography are used to characterize these NPs in depth. By isolating Cu NP size as a parameter, we can unequivocally establish its effect on electrochemical performance for the NO3RR to ammonia under optimal operating conditions for the catalyst (0.1 M KOH electrolyte at -1.25 V vs RHE, as established in the first phase). The smallest Cu NPs (8.3 nm with a TDPA ligand) perform best, achieving Faradaic efficiencies (FEs) of 85.4% and absolute current densities of similar to 250 mA cm(-2), with increasing current densities and constant FEs as the particle size decreases. To allow for a rational approach to Cu-based catalyst design from a stability perspective, this work completed a first study of the main degradation pathway that the Cu NPs undergo during NO3RR. High-resolution electron microscopy and tomography are used to characterize the particles at various stages of the reaction. The NPs undergo agglomeration, pulverization, and particle detachment due to the reaction, starting at a particle size of 8.3 nm and progressively getting smaller, but leveling off, until a NP size of 2.6 nm is reached after 2 h of electrolysis. This decrease in NP size goes paired with a decrease in FE from 83% after the first 15 min to 74% after 2 h at -0.75 V vs RHE, despite the increase in active surface area. These insights into the most prominent degradation mechanisms allow for rational adjustments to future catalysts to combat these changes; for example, by embedding NPs in a tailored support, morphological degradation could be impeded. Therefore, these insights allow for a rational approach to the improvement of the stability of Cu-based catalysts for the NO3RR, a very important but often an overlooked aspect of catalyst design. |
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Wos |
001228056800001 |
Publication Date |
2024-04-30 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2574-0962 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
6.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 6.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:206469 |
Serial |
9323 |
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Author |
Shafiei, M.; Fazileh, F.; Peeters, F.M.; Milošević, M.V. |
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Title |
Tuning the quantum phase transition of an ultrathin magnetic topological insulator |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
7 |
Pages |
074201-74208 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We explore the effect of thickness, magnetization direction, strain, and gating on the topological quantum phase transition of a thin-film magnetic topological insulator. Reducing the film thickness to the ultrathin regime couples the edge states on the two surfaces, opening a gap known as the hybridization gap, and causing a phase transition from a topological insulator to a normal insulator (NI). An out-of-plane/in-plane magnetization of size proportional to the hybridization gap triggers a phase transition from a normal insulator state to a quantum anomalous Hall (QAH)/semimetal state. A magnetization tilt by angle 0 from the out-of-plane axis influences the topological phase transition in a way that for sufficiently large 0, no phase transition from NI to QAH can be observed regardless of the sample thickness or magnetization, and for 0 close to pi /2 the system transits to a semimetal phase. Furthermore, we demonstrate that compressive/tensile strain can be used to decrease/increase the magnetization threshold for the topological phase transition. Finally, we reveal the effect of a vertical potential acting on the film, be it due to the substrate or applied gating, which breaks inversion symmetry and raises the magnetization threshold for the transition from NI to QAH state. |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001281 |
Publication Date |
2024-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:207598 |
Serial |
9324 |
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Author |
Cao, S.; Tirry, W.; van den Broek, W.; Schryvers, D. |
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Title |
3D reconstruction of Ni4Ti3 precipitates in a Ni51Ti49 alloy in a FIB/SEM dual-beam system |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
583 |
Issue |
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Pages |
277-284 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
Ni4Ti3 precipitates play an important role in the shape memory and superelastic behaviour of thermo-mechanically treated Ni-Ti material. The 3D morphology and distribution of such precipitates with lenticular shape and rhombohedral atomic structure in the austenitic B2 matrix of a binary Ni-rich Ni-Ti alloy has been elucidated via a slice view procedure in a Dual-Beam FIB/SEM system. With the sequence of cross-section SE images obtained from the SEM, a 3D reconstruction has been achieved after proper alignment and image processing, from which both qualitative and quantitative analysis can be performed. Careful imaging is needed to ensure that all variants of the precipitates are observed with equal probability, regardless sample orientation. Moreover, due to the weak contrast of the precipitates, proper imaging conditions need to be selected to allow for semi-automated image treatment. Finally, a volume ratio of 10.2% for the Ni4Ti3 precipitates could be calculated, summed over all variants, which yields a net composition of Ni50.36Ti49.64 for the matrix, leading to an increase of 113 degrees for the martensitic start temperature Ms. Also, the expected relative orientation of the different variants of the precipitates could be confirmed. In the near future, other quantitative measures on the distribution of the precipitates can be expected. |
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Place of Publication |
Lausanne |
Editor |
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Wos |
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Publication Date |
2009-03-11 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1662-9752; |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
Multimat; Fwo |
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:77454 |
Serial |
16 |
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Author |
Nikolaev, A.V.; Michel, K.H. |
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Title |
Ab initio approach to superexchange interactions in alkali doped fullerides AC60 |
Type |
P1 Proceeding |
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Year |
2004 |
Publication |
AIP conference proceedings
T2 – 18th International Winterschool/Euroconference on Electronic Properties, of Novel Materials, MAR 06-JUN 13, 2004, Kirchberg, AUSTRIA |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
393-396 |
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Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
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Abstract |
The superexchange interactions between the fullerenes arise as a result of the electron transfer from the C-60 molecule to the alkali atom and back. We present a scheme, which is a configuration interaction approach based on the valence bond (Heitler-London) method. The effect of superexchange is described together with chemical bonding by constructing and solving a secular equation, rather than by using a perturbation treatment. We have considered 180degrees and 90degrees superexchange for the C-60 Cs-C-60 pathways. The calculations account for unusual electronic properties of polymer orthorhombic and quenched cubic phases of CsC60: two lines in nuclear magnetic resonance experiments, the development of a spin-singlet ground state and a decrease of magnetic susceptibility as T-->0. |
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Place of Publication |
New York |
Editor |
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Language |
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Wos |
000224699400085 |
Publication Date |
2004-11-11 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
723 |
Series Issue |
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Edition |
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ISSN |
0-7354-0204-3 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103752 |
Serial |
27 |
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Author |
Van Tendeloo, G.; Schryvers, D. |
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Title |
Atomic structure of alloys close to phase transitions |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Nucleation and growth processes in materials |
Abbreviated Journal |
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Volume |
580 |
Issue |
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Pages |
283-292 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Place of Publication |
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Wos |
000165506200043 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:48377 |
Serial |
197 |
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Author |
Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G. |
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Title |
Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Journal of alloys and compounds
T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
J Alloy Compd |
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Volume |
251 |
Issue |
1-2 |
Pages |
206-208 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions. |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier Science |
Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1997XM34000046 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0925-8388; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.133 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.133; 1997 IF: 1.035 |
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Call Number |
UA @ lucian @ c:irua:95868 |
Serial |
310 |
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| Permanent link to this record |
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Author |
Mortet, V.; Zhang, L.; Echert, M.; Soltani, A.; d' Haen, J.; Douheret, O.; Moreau, M.; Osswald, S.; Neyts, E.; Troadec, D.; Wagner, P.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K. |
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Title |
Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition |
Type |
A3 Journal article |
| |
Year |
2009 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
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Volume |
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Issue |
1203 |
Pages |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Wuhan |
Editor |
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Language |
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Wos |
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Publication Date |
2010-03-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1946-4274; |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:81646 |
Serial |
327 |
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| Permanent link to this record |
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Author |
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
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Title |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
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| |
Volume |
4 |
Issue |
1/3 |
Pages |
109-111 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000167727200026 |
Publication Date |
2002-10-14 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1369-8001; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
2.359 |
Times cited |
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Open Access |
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| |
Notes |
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Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
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Call Number |
UA @ lucian @ c:irua:94967 |
Serial |
343 |
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| Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
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Volume |
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Issue |
164 |
Pages |
495-498 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Wos |
000166835300106 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
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| Permanent link to this record |
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Author |
Moshnyaga, V.; Damaschke, B.; Shapoval, O.; Belenchuk, A.; Faupel, J.; Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Mücksch, M.; Tsurkan, V.; Tidecks, R.; Samwer, K. |
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Title |
Corrigendum: Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Nature materials |
Abbreviated Journal |
Nat Mater |
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Volume |
4 |
Issue |
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Pages |
104 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1476-1122 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
39.737 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 39.737; 2005 IF: 15.941 |
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Call Number |
UA @ lucian @ c:irua:54856 |
Serial |
530 |
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| Permanent link to this record |
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Author |
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
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Title |
Crystallography of fullerites and related graphene textures |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
150/151 |
Issue |
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Pages |
53-64 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1994BC12F00004 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10001 |
Serial |
590 |
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| Permanent link to this record |
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Author |
Kalitzova, M.; Lebedev, O.I.; Zollo, G.; Gesheva, K.; Vlakhov, E.; Marinov, Y.; Ivanova, T.; |
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Title |
Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Applied physics A : materials science & processing |
Abbreviated Journal |
Appl Phys A-Mater |
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Volume |
91 |
Issue |
3 |
Pages |
515-519 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Heidelberg |
Editor |
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Language |
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Wos |
000255089300027 |
Publication Date |
2008-03-13 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0947-8396;1432-0630; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.455 |
Times cited |
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Open Access |
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Notes |
Iuap Vi |
Approved |
Most recent IF: 1.455; 2008 IF: 1.884 |
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Call Number |
UA @ lucian @ c:irua:69129 |
Serial |
780 |
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Author |
Milat, O.; Van Tendeloo, G.; Amelinckx, S.; Wright, A.J.; Greaves, C. |
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Title |
Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Chemistry of materials |
Abbreviated Journal |
Chem Mater |
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Volume |
7 |
Issue |
9 |
Pages |
1709-1715 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
A1995RW21200021 |
Publication Date |
2005-03-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0897-4756;1520-5002; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
8.354 |
Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13326 |
Serial |
850 |
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| Permanent link to this record |
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Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
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Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
415-418 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4; 0951-3248 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
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Author |
Avetisyan, A.A.; Partoens, B.; Peeters, F.M. |
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Title |
Electric field tuning of the band gap in four layers of graphene with different stacking order |
Type |
P1 Proceeding |
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Year |
2012 |
Publication |
Proceedings of the Society of Photo-optical Instrumentation Engineers
T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
84140-84148 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Wos |
000303856600012 |
Publication Date |
2012-01-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
8414 |
Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; |
Approved |
Most recent IF: NA |
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| |
Call Number |
UA @ lucian @ c:irua:113046 |
Serial |
886 |
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Author |
Ghica, C.; Enculescu, I.; Nistor, L.C.; Matei, E.; Van Tendeloo, G. |
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Title |
Electrochemical growth and characterization of nanostructured ZnO thin films |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Journal of optoelectronics and advanced materials |
Abbreviated Journal |
J Optoelectron Adv M |
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Volume |
10 |
Issue |
12 |
Pages |
3237-3240 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
ZnO is a wide band-gap (ca. 3.4 eV) semiconductor, piezoelectric, pyroelectric, biocompatible, transparent in the visible spectrum and UV light emitting material. The fabrication in 2001 of the first nanobelts of semiconductor oxide materials lead to a rapid expansion of researches concerning one dimensional nanostructures (nanotubes, nanowires, nanobelts), given their possible application in optics, optoelectronics, piezoelectricity, catalysis. Researches carried on up to date evidenced the possibility to obtain an extraordinary variety of ZnO nanostructures, in function of the experimental parameters and the used growth methods. In this work we present morphostructural results on nanostructured ZnO layers obtained by electrochemical deposition. The films have been grown on gold covered glass plates and Si wafers, in various experimental conditions such as: nature of the wetting agents, electrical polarization of the substrate (continuous, pulsed). The influence of the growth conditions on the crystalline structure and morphology of the films is revealed by scanning and transmission electron microscopy studies. The films show a variety of growth morphologies, from entangled-wires-like to honeycomb-like layers. These large-specific-surface layers will be tested as nanostructured substrates for photovoltaic cells with improved efficiency. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Bucharest |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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| |
ISSN |
1454-4164 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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| |
Impact Factor |
0.449 |
Times cited |
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Open Access |
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| |
Notes |
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Approved |
Most recent IF: 0.449; 2008 IF: 0.577 |
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Call Number |
UA @ lucian @ c:irua:75746 |
Serial |
899 |
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| Permanent link to this record |
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Author |
Colomer, J.-F.; Henrard, L.; Lambin, P.; Van Tendeloo, G. |
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Title |
Electron diffraction of nanotubes bundles : unique helicity and tube-tube atomically coherent packing |
Type |
P1 Proceeding |
| |
Year |
2002 |
Publication |
AIP conference proceedings
T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
314-317 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
The atomic structure of single-wall carbon nanotube bundles produced by three different techniques has been characterized by electron diffraction and microscopy. Small bundles produced by Catalytical Chemical Vapor Deposition (CCVD) exhibit only one or two tube chiralities within a single bundle while bundles produced by arc-discharge or laser-ablation exhibit more chiralities. A detailed analysis of the central line of diffraction is also presented. The CCVD nanotubes present more intense spots around 1.7 Angstrom(-1) < k < 2Angstrom(-1) (k is the momentum transfer) compared to what is observed for nanotubes produced by other methods. Amongst the possible explanation for such an anomaly, we put forward that in this range of momentum transfer, the relative tube orientations and translations are important for what concerns the interpretation of the diffraction peaks intensities. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York |
Editor |
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Language |
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Wos |
000178866600070 |
Publication Date |
2003-02-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
633 |
Series Issue |
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Edition |
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ISSN |
0-7354-0088-1; 0094-243x |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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| |
Call Number |
UA @ lucian @ c:irua:104172 |
Serial |
921 |
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| Permanent link to this record |
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Author |
Van Tendeloo, G.; Amelinckx, S. |
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Title |
Electron-microscopy and the structural studies of superconducting materials and fullerites |
Type |
P1 Proceeding |
| |
Year |
1994 |
Publication |
NATO Advanced Study Institutes series: series E : applied sciences
T2 – NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
521-538 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Publisher |
Kluwer Academic |
Place of Publication |
Dordrecht |
Editor |
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Language |
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Wos |
A1994BA54N00025 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
263 |
Series Issue |
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Edition |
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ISSN |
0-7923-2773-X |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:95934 |
Serial |
949 |
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| Permanent link to this record |
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Author |
Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E. |
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Title |
EM study of twinning in the Ni5Al3 bainitic phase |
Type |
A3 Journal article |
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Year |
1993 |
Publication |
Twinning in advanced materials |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
395-402 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Place of Publication |
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Wos |
A1994BB13P00037 |
Publication Date |
0000-00-00 |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Times cited |
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Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:48358 |
Serial |
1031 |
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| Permanent link to this record |
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Author |
Saniz, R.; Barbiellini, B.; Denison, A.B.; Bansil, A. |
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Title |
Erratum: Spontaneous magnetization and electron momentum density in three-dimensional quantum dots [Phys. Rev. B 68, 165326 (2003)] |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
84 |
Issue |
11 |
Pages |
119907 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Thesis |
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Place of Publication |
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Wos |
000295263600015 |
Publication Date |
2011-09-28 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.836 |
Times cited |
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Open Access |
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Notes |
; ; |
Approved |
Most recent IF: 3.836; 2011 IF: 3.691 |
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Call Number |
UA @ lucian @ c:irua:92919 |
Serial |
1081 |
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| Permanent link to this record |
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Author |
Mishra, R.S.K.; Pandey, D.; Lemmens, H.; Van Tendeloo, G. |
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Title |
Evidence for another low-temperature phase transition in tetragonal Pb(ZrxTi1-x)O3 (x=0.515,0.520) |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
64 |
Issue |
5 |
Pages |
054104 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature. |
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Place of Publication |
Lancaster, Pa |
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Wos |
000170267000028 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.836; 2001 IF: NA |
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Call Number |
UA @ lucian @ c:irua:103407 |
Serial |
1093 |
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| Permanent link to this record |
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Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
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Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
53-56 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
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Address |
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Publisher |
IOP Publishing |
Place of Publication |
Bristol |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
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| Permanent link to this record |
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Author |
Veljkovic, D.; Tadić, M.; Peeters, F.M. |
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Title |
Intersublevel absorption in stacked n-type doped self-assembled quantum dots |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Materials science forum |
Abbreviated Journal |
Mater Sci Forum |
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Volume |
494 |
Issue |
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Pages |
37-42 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:94746 |
Serial |
1715 |
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| Permanent link to this record |
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Author |
Veljkovic, D.; Tadić, M.; Peeters, F.M. |
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Title |
Magnetoexcitons in type-II self-assembled quantum dots and quantum-dot superlattices |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
Recent developments in advanced materials and processes |
Abbreviated Journal |
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Volume |
518 |
Issue |
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Pages |
51-56 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:60841 |
Serial |
1918 |
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| Permanent link to this record |
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Author |
Partoens, B.; Matulis, A.; Peeters, F.M. |
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Title |
Magnetoplasma excitations in vertically coupled quantum dot systems |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Materials science forum |
Abbreviated Journal |
Mater Sci Forum |
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Volume |
297/298 |
Issue |
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Pages |
225-228 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
000080081600043 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:24176 |
Serial |
1920 |
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Author |
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R. |
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Title |
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Microscopy of Semiconducting Materials |
Abbreviated Journal |
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Volume |
107 |
Issue |
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Pages |
303-306 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT) |
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Abstract |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
SPRINGER PROCEEDINGS IN PHYSICS |
Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0930-8989 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:72914 |
Serial |
1962 |
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| Permanent link to this record |
