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Author Mortet, V.; Zhang, L.; Echert, M.; Soltani, A.; d' Haen, J.; Douheret, O.; Moreau, M.; Osswald, S.; Neyts, E.; Troadec, D.; Wagner, P.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K.
Title Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition Type A3 Journal article
Year 2009 Publication Materials Research Society symposium proceedings Abbreviated Journal
Volume Issue 1203 Pages
Keywords A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data.
Address
Corporate Author Thesis
Publisher Place of Publication Wuhan Editor
Language Wos Publication Date 2010-03-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1946-4274; ISBN Additional Links UA library record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:81646 Serial 327
Permanent link to this record
 
 
Author Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S.
Title Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy Type A1 Journal article
Year 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc
Volume 4 Issue 1/3 Pages 109-111
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000167727200026 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.359 Times cited (up) Open Access
Notes Approved Most recent IF: 2.359; 2001 IF: 0.419
Call Number UA @ lucian @ c:irua:94967 Serial 343
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation Type A1 Journal article
Year 1999 Publication Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal Inst Phys Conf Ser
Volume Issue 164 Pages 495-498
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000166835300106 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0650-5; 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:102918 Serial 376
Permanent link to this record
 
 
Author Moshnyaga, V.; Damaschke, B.; Shapoval, O.; Belenchuk, A.; Faupel, J.; Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Mücksch, M.; Tsurkan, V.; Tidecks, R.; Samwer, K.
Title Corrigendum: Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films Type A1 Journal article
Year 2005 Publication Nature materials Abbreviated Journal Nat Mater
Volume 4 Issue Pages 104
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1476-1122 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 39.737 Times cited (up) Open Access
Notes Approved Most recent IF: 39.737; 2005 IF: 15.941
Call Number UA @ lucian @ c:irua:54856 Serial 530
Permanent link to this record
 
 
Author van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W.
Title Crystallography of fullerites and related graphene textures Type A1 Journal article
Year 1994 Publication Materials science forum Abbreviated Journal
Volume 150/151 Issue Pages 53-64
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1994BC12F00004 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10001 Serial 590
Permanent link to this record
 
 
Author Kalitzova, M.; Lebedev, O.I.; Zollo, G.; Gesheva, K.; Vlakhov, E.; Marinov, Y.; Ivanova, T.;
Title Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing Type A1 Journal article
Year 2008 Publication Applied physics A : materials science & processing Abbreviated Journal Appl Phys A-Mater
Volume 91 Issue 3 Pages 515-519
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Heidelberg Editor
Language Wos 000255089300027 Publication Date 2008-03-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0947-8396;1432-0630; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.455 Times cited (up) Open Access
Notes Iuap Vi Approved Most recent IF: 1.455; 2008 IF: 1.884
Call Number UA @ lucian @ c:irua:69129 Serial 780
Permanent link to this record
 
 
Author Milat, O.; Van Tendeloo, G.; Amelinckx, S.; Wright, A.J.; Greaves, C.
Title Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study Type A1 Journal article
Year 1995 Publication Chemistry of materials Abbreviated Journal Chem Mater
Volume 7 Issue 9 Pages 1709-1715
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos A1995RW21200021 Publication Date 2005-03-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record
Impact Factor 8.354 Times cited (up) Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13326 Serial 850
Permanent link to this record
 
 
Author Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J.
Title EFTEM study of plasma etched low-k Si-O-C dielectrics Type A1 Journal article
Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal
Volume Issue 169 Pages 415-418
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4; 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103432 Serial 877
Permanent link to this record
 
 
Author Avetisyan, A.A.; Partoens, B.; Peeters, F.M.
Title Electric field tuning of the band gap in four layers of graphene with different stacking order Type P1 Proceeding
Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal
Volume Issue Pages 84140-84148
Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000303856600012 Publication Date 2012-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume 8414 Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:113046 Serial 886
Permanent link to this record
 
 
Author Ghica, C.; Enculescu, I.; Nistor, L.C.; Matei, E.; Van Tendeloo, G.
Title Electrochemical growth and characterization of nanostructured ZnO thin films Type A1 Journal article
Year 2008 Publication Journal of optoelectronics and advanced materials Abbreviated Journal J Optoelectron Adv M
Volume 10 Issue 12 Pages 3237-3240
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract ZnO is a wide band-gap (ca. 3.4 eV) semiconductor, piezoelectric, pyroelectric, biocompatible, transparent in the visible spectrum and UV light emitting material. The fabrication in 2001 of the first nanobelts of semiconductor oxide materials lead to a rapid expansion of researches concerning one dimensional nanostructures (nanotubes, nanowires, nanobelts), given their possible application in optics, optoelectronics, piezoelectricity, catalysis. Researches carried on up to date evidenced the possibility to obtain an extraordinary variety of ZnO nanostructures, in function of the experimental parameters and the used growth methods. In this work we present morphostructural results on nanostructured ZnO layers obtained by electrochemical deposition. The films have been grown on gold covered glass plates and Si wafers, in various experimental conditions such as: nature of the wetting agents, electrical polarization of the substrate (continuous, pulsed). The influence of the growth conditions on the crystalline structure and morphology of the films is revealed by scanning and transmission electron microscopy studies. The films show a variety of growth morphologies, from entangled-wires-like to honeycomb-like layers. These large-specific-surface layers will be tested as nanostructured substrates for photovoltaic cells with improved efficiency.
Address
Corporate Author Thesis
Publisher Place of Publication Bucharest Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1454-4164 ISBN Additional Links UA library record; WoS full record;
Impact Factor 0.449 Times cited (up) Open Access
Notes Approved Most recent IF: 0.449; 2008 IF: 0.577
Call Number UA @ lucian @ c:irua:75746 Serial 899
Permanent link to this record
 
 
Author Colomer, J.-F.; Henrard, L.; Lambin, P.; Van Tendeloo, G.
Title Electron diffraction of nanotubes bundles : unique helicity and tube-tube atomically coherent packing Type P1 Proceeding
Year 2002 Publication AIP conference proceedings T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA Abbreviated Journal
Volume Issue Pages 314-317
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract The atomic structure of single-wall carbon nanotube bundles produced by three different techniques has been characterized by electron diffraction and microscopy. Small bundles produced by Catalytical Chemical Vapor Deposition (CCVD) exhibit only one or two tube chiralities within a single bundle while bundles produced by arc-discharge or laser-ablation exhibit more chiralities. A detailed analysis of the central line of diffraction is also presented. The CCVD nanotubes present more intense spots around 1.7 Angstrom(-1) < k < 2Angstrom(-1) (k is the momentum transfer) compared to what is observed for nanotubes produced by other methods. Amongst the possible explanation for such an anomaly, we put forward that in this range of momentum transfer, the relative tube orientations and translations are important for what concerns the interpretation of the diffraction peaks intensities.
Address
Corporate Author Thesis
Publisher Place of Publication New York Editor
Language Wos 000178866600070 Publication Date 2003-02-26
Series Editor Series Title Abbreviated Series Title
Series Volume 633 Series Issue Edition
ISSN 0-7354-0088-1; 0094-243x ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104172 Serial 921
Permanent link to this record
 
 
Author Van Tendeloo, G.; Amelinckx, S.
Title Electron-microscopy and the structural studies of superconducting materials and fullerites Type P1 Proceeding
Year 1994 Publication NATO Advanced Study Institutes series: series E : applied sciences T2 – NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy Abbreviated Journal
Volume Issue Pages 521-538
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Kluwer Academic Place of Publication Dordrecht Editor
Language Wos A1994BA54N00025 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 263 Series Issue Edition
ISSN 0-7923-2773-X ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95934 Serial 949
Permanent link to this record
 
 
Author Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E.
Title EM study of twinning in the Ni5Al3 bainitic phase Type A3 Journal article
Year 1993 Publication Twinning in advanced materials Abbreviated Journal
Volume Issue Pages 395-402
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BB13P00037 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:48358 Serial 1031
Permanent link to this record
 
 
Author Saniz, R.; Barbiellini, B.; Denison, A.B.; Bansil, A.
Title Erratum: Spontaneous magnetization and electron momentum density in three-dimensional quantum dots [Phys. Rev. B 68, 165326 (2003)] Type A1 Journal article
Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 84 Issue 11 Pages 119907
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000295263600015 Publication Date 2011-09-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record
Impact Factor 3.836 Times cited (up) Open Access
Notes ; ; Approved Most recent IF: 3.836; 2011 IF: 3.691
Call Number UA @ lucian @ c:irua:92919 Serial 1081
Permanent link to this record
 
 
Author Mishra, R.S.K.; Pandey, D.; Lemmens, H.; Van Tendeloo, G.
Title Evidence for another low-temperature phase transition in tetragonal Pb(ZrxTi1-x)O3 (x=0.515,0.520) Type A1 Journal article
Year 2001 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 64 Issue 5 Pages 054104
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000170267000028 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited (up) Open Access
Notes Approved Most recent IF: 3.836; 2001 IF: NA
Call Number UA @ lucian @ c:irua:103407 Serial 1093
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G.
Title HREM investigation of a Fe/GaN/Fe tunnel junction Type A1 Journal article
Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England Abbreviated Journal
Volume Issue 169 Pages 53-56
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Address
Corporate Author Thesis
Publisher IOP Publishing Place of Publication Bristol Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95715 Serial 1503
Permanent link to this record
 
 
Author Veljkovic, D.; Tadić, M.; Peeters, F.M.
Title Intersublevel absorption in stacked n-type doped self-assembled quantum dots Type A1 Journal article
Year 2005 Publication Materials science forum Abbreviated Journal Mater Sci Forum
Volume 494 Issue Pages 37-42
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:94746 Serial 1715
Permanent link to this record
 
 
Author Veljkovic, D.; Tadić, M.; Peeters, F.M.
Title Magnetoexcitons in type-II self-assembled quantum dots and quantum-dot superlattices Type A1 Journal article
Year 2006 Publication Recent developments in advanced materials and processes Abbreviated Journal
Volume 518 Issue Pages 51-56
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:60841 Serial 1918
Permanent link to this record
 
 
Author Partoens, B.; Matulis, A.; Peeters, F.M.
Title Magnetoplasma excitations in vertically coupled quantum dot systems Type A1 Journal article
Year 1999 Publication Materials science forum Abbreviated Journal Mater Sci Forum
Volume 297/298 Issue Pages 225-228
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000080081600043 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:24176 Serial 1920
Permanent link to this record
 
 
Author Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.
Title Measurement of the mean inner potential of ZnO nanorods by transmission electron holography Type A1 Journal article
Year 2005 Publication Microscopy of Semiconducting Materials Abbreviated Journal
Volume 107 Issue Pages 303-306
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title SPRINGER PROCEEDINGS IN PHYSICS Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:72914 Serial 1962
Permanent link to this record
 
 
Author Hervieu, M.; Michel, C.; Martin, C.; Huvé, M.; Van Tendeloo, G.; Maignan, A.; Pelloquin, D.; Goutenoire, F.; Raveau, B.
Title Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à haute Tc Type A1 Journal article
Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal
Volume 4 Issue Pages 2057-2067
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor
Language Wos A1994PT17900002 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4320 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10041 Serial 1973
Permanent link to this record
 
 
Author Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G.
Title A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films Type A1 Journal article
Year 2003 Publication Institute of physics conference series T2 – Microscopy of semiconducting materials Abbreviated Journal
Volume Issue Pages 397-400
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range.
Address
Corporate Author Thesis
Publisher Iop Place of Publication Cambridge Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0979-2 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:54860 Serial 2048
Permanent link to this record
 
 
Author Verbist, K.; Tafuri, F.; Granozio, F.M.; Di Chiara, S.; Van Tendeloo, G.
Title Microstructure of artificial [100] 45 degrees twist grain boundaries in YBa2Cu3O7-delta Type P1 Proceeding
Year 1998 Publication Electron Microscopy 1998, Vol 2: Materials Science 1 Abbreviated Journal
Volume Issue Pages 593-594
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000077019900291 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0565-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104356 Serial 2066
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Author Nikolaev, A.V.; Michel, K.H.
Title Molecular terms and optical transitions of C60n+/- molecular ions Type P1 Proceeding
Year 2002 Publication AIP conference proceedings T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA Abbreviated Journal
Volume Issue Pages 417-420
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract We have studied the molecular energy terms of the hole configurations (h(u)(+))(m), m=2,3,4,5 of C-60(m+) cations and the electronic configurations (t(1u))(n) n=2,3,4, as well as (t(1u))(n-1)t(1g) of the C-60(n-) anions. The lowest terms (within an energy span of 0.03 eV) for C-60(2+) are three triplets T-3(1g), (3)G(g), T-3(2g) and for C-60(3+) are three quartets T-4(1u), (4)G(u), T-4(2u), which favor Jahn-Teller distortions. For the ground state of C-60(2-) we find a triplet T-3(1g) in agreement with Hund's rules. Our method takes into account intramolecular direct and exchange multipolar Coulomb interactions.
Address
Corporate Author Thesis
Publisher Place of Publication New York Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 633 Series Issue Edition
ISSN 0-7354-0088-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103905 Serial 2187
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Author Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P.
Title Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen Type A1 Journal article
Year 2015 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A
Volume 212 Issue 212 Pages 1191-1201
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000356706500003 Publication Date 2015-04-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.775 Times cited (up) Open Access
Notes Methusalem project NANO; FWO; 246791 COUNTATOMS Approved Most recent IF: 1.775; 2015 IF: 1.616
Call Number c:irua:126732 Serial 2204
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Author Cheng, J.P.; Zhang, X.B.; Ye, Y.; Tao, X.Y.; Liu, F.; Li, Y.; Van Tendeloo, G.
Title Natural mineral-marine manganese nodule as a novel catalyst for the synthesis of carbon nanotubes Type A1 Journal article
Year 2006 Publication Journal of Wuhan University of Technology: materials science edition Abbreviated Journal
Volume 21 Issue 1 Pages 29-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:57740 Serial 2286
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Author Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E.
Title Nucleation and growth of Ni5Al3 in austenite and martensite matrices Type P1 Proceeding
Year 1994 Publication Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal
Volume Issue Pages 509-510
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09Y00247 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:104476 Serial 2386
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Author Neyts, E.C.; Bogaerts, A.
Title Numerical study of the size-dependent melting mechanisms of nickel nanoclusters Type A1 Journal article
Year 2009 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume 113 Issue 7 Pages 2771-2776
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Molecular dynamics simulations were used to investigate the size-dependent melting mechanism of nickel nanoclusters of various sizes. The melting process was monitored by the caloric curve, the overall cluster Lindemann index, and the atomic Lindemann index. Size-dependent melting temperatures were determined, and the correct linear dependence on inverse diameter was recovered. We found that the melting mechanism gradually changes from dynamic coexistence melting to surface melting with increasing cluster size. These findings are of importance in better understanding carbon nanotube growth by catalytic chemical vapor deposition as the phase state of the catalyst nanoparticle codetermines the growth mechanism.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited (up) Open Access
Notes Approved Most recent IF: 4.536; 2009 IF: 4.224
Call Number UA @ lucian @ c:irua:76495 Serial 2410
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Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J.
Title Ordering and defects in BanTaxTiyO3n ternary oxides Type P1 Proceeding
Year 1994 Publication Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal
Volume Issue Pages 869-870
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09Y00422 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited (up) Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:104477 Serial 2504
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Author Croitoru, M.D.; Buzdin, A.I.
Title Peculiarities of the orbital effect in the Fulde-Ferrell-Larkin-Ovchinnikov state in quasi-one-dimensional superconductors Type A1 Journal article
Year 2014 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 89 Issue 22 Pages 224506
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Using the quasiclassical formalism, we determine the low-temperature phase diagram of a quasi-one-dimensional superconductor, taking into account the interchain Josephson coupling and the paramagnetic spin splitting. We show that the anisotropy of the onset of superconductivity changes in the FFLO state as compared with the conventional superconducting phase. It can result in anomalous peaks in the field-direction dependence of the upper critical field when the magnetic field length equals to the FFLO period. This regime is characterized by the lock-in effect of the FFLO modulation wave vector, which is governed by the magnetic length. Furthermore, in the FFLO phase, the anisotropy of the upper critical field is inverted at T-1(**) = 0.5T(c0), where the orbital anisotropy disappears. We suggest that an experimental study of the anisotropy of the upper critical field can provide very reach information about the parameters of the FFLO phase in quasi-1D samples.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000336975000005 Publication Date 2014-06-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited (up) Open Access
Notes Approved Most recent IF: 3.836; 2014 IF: 3.736
Call Number UA @ lucian @ c:irua:117749 Serial 2569
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