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Author Moors, K.; Soree, B.; Tokei, Z.; Magnus, W.
  Title Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes Type P1 Proceeding
  Year 2015 Publication On Ultimate Integration On Silicon (eurosoi-ulis) Abbreviated Journal
  Volume Issue Pages 201-204
  Keywords P1 Proceeding; Condensed Matter Theory (CMT)
  Abstract We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.
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  Corporate Author Thesis
  Publisher Ieee Place of Publication New york Editor
  Language Wos Publication Date
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-4799-6911-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited (up) Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:144776 Serial 4651
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