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Author |
Alloul, A.; Vlaeminck, S.E. |
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Title |
Towards upgrading of wastewater resources to microbial protein : volatile fatty acids impacting growth kinetics and yield of purple bacteria |
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P3 Proceeding |
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Year |
2017 |
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Abbreviated Journal |
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Volume |
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Pages |
2 p.
T2 - 5th IWA Benelux Young Water Professional |
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Keywords |
P3 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL) |
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no |
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Call Number |
UA @ admin @ c:irua:151115 |
Serial |
8683 |
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Author |
Bencs, L.; Horemans, B.; Buczyńska, A.J.; Van Grieken, R. |
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Title |
Uneven distribution of inorganic pollutants in marine air originating from ocean-going ships |
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A1 Journal article |
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Year |
2017 |
Publication |
Environmental pollution |
Abbreviated Journal |
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Volume |
222 |
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Pages |
226-233 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
The distribution of mass, water-soluble inorganic salts and mineral elements of size-segregated aerosols (PM1, PM2.5-1 and PM10-2.5), precursor gaseous pollutants, black carbon, and nanoparticles (10-300 nm size range) at the Southern Bight of the North Sea has been studied. The concentrations of air pollutants peaked over shipping lanes, open-water anchorage areas and frequently navigated waters, due to the presence of mobile emission sources. A considerable decrease in air pollutant levels was seen when diverting from these marine areas towards remote or coastal banks. These findings showed the rapid dispersion of pollutants in the marine air. The nano-aerosol count, originating from ocean-going ships, peaked at lower average aerodynamic diameters (e.g., approximate to 28 nm) than those, observed from low displacement vessels (45-50 nm, e.g., for fishing boats). The average diameter of nano-PM depended also on weather conditions, e.g., it was higher (approximate to 50 nm) in air of higher humidity. (C) 2016 Elsevier Ltd. All rights reserved. |
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000395360900028 |
Publication Date |
2017-01-06 |
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ISSN |
0269-7491; 1873-6424 |
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UA library record; WoS full record; WoS citing articles |
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Call Number |
UA @ admin @ c:irua:142516 |
Serial |
8710 |
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Author |
Defoirdt, T.; Vlaeminck, S.E.; Sun, X.; Boon, N.; Clauwaert, P. |
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Title |
Ureolytic activity and its regulation in vibrio campbellii and vibrio harveyi in relation to nitrogen recovery from human urine |
Type |
A1 Journal article |
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Year |
2017 |
Publication |
Environmental science and technology |
Abbreviated Journal |
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Volume |
51 |
Issue |
22 |
Pages |
13335-13343 |
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Keywords |
A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL) |
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Abstract |
Human urine contains a high concentration of nitrogen and is therefore an interesting source for nutrient recovery. Ureolysis is a key requirement in many processes aiming at nitrogen recovery from urine. Although ureolytic activity is widespread in terrestrial and aquatic environments, very little is known about the urease activity and regulation in specific bacteria other than human pathogens. Given the relatively high salt concentration of urine, marine bacteria would be particularly well suited for biotechnological applications involving nitrogen recovery from urine, and therefore, in this study, we investigated ureolytic activity and its regulation in marine vibrios. Thirteen out of 14 strains showed ureolytic activity. The urease activity was induced by urea, since complete and very rapid hydrolysis, up to 4 g L-1 of urea, was observed in synthetic human urine when the bacteria were pretreated with 10 g L-1 urea, whereas slow hydrolysis occurred when they were pretreated with 1 g L-1 urea (14-35% hydrolysis after 2 days). There was no correlation between biofilm formation and "motility on one hand, and ureolysis on the other hand, and biofilm and motility inhibitors did not affect ureolysis. Together, our data demonstrate for the first time the potential of marine vibrios as fast urea hydrolyzers for biotechnological applications aiming at nutrient recovery from human urine. |
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000416496700032 |
Publication Date |
2017-10-30 |
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ISSN |
0013-936x; 1520-5851 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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no |
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Call Number |
UA @ admin @ c:irua:147703 |
Serial |
8716 |
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Author |
da Costa, D.R.; Chaves, A.; Farias, G.A.; Peeters, F.M. |
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Title |
Valley filtering in graphene due to substrate-induced mass potential |
Type |
A1 Journal article |
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Year |
2017 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
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Volume |
29 |
Issue |
21 |
Pages |
215502 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The interaction of monolayer graphene with specific substrates may break its sublattice symmetry and results in unidirectional chiral states with opposite group velocities in the different Dirac cones (Zarenia et al 2012 Phys. Rev. B 86 085451). Taking advantage of this feature, we propose a valley filter based on a transversal mass kink for low energy electrons in graphene, which is obtained by assuming a defect region in the substrate that provides a change in the sign of the substrate-induced mass and thus creates a non-biased channel, perpendicular to the kink, for electron motion. By solving the time-dependent Schrodinger equation for the tight-binding Hamiltonian, we investigate the time evolution of a Gaussian wave packet propagating through such a system and obtain the transport properties of this graphene-based substrate-induced quantum point contact. Our results demonstrate that efficient valley filtering can be obtained, provided: (i) the electron energy is sufficiently low, i.e. with electrons belonging mostly to the lowest sub-band of the channel, and (ii) the channel length (width) is sufficiently long (narrow). Moreover, even though the transmission probabilities for each valley are significantly affected by impurities and defects in the channel region, the valley polarization in this system is shown to be robust against their presence. |
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Wos |
000400092700002 |
Publication Date |
2017-04-24 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0953-8984 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Times cited |
15 |
Open Access |
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no |
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Call Number |
UA @ admin @ c:irua:152636 |
Serial |
8730 |
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Author |
Han, M.; Seuntjens, D.; Al-Omari, A.; Takacs, I.; Meerburg, F.; Murthy, S.; Vlaeminck, S.E.; De Clippeleir, H. |
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Title |
Water and process parameters as controllers for the ammonia to nitrite oxidation rate ratio in activated sludge |
Type |
P3 Proceeding |
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Year |
2017 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
3 p.
T2 - IWA 2017 Conference on Sustainable Waste |
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Keywords |
P3 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL) |
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Call Number |
UA @ admin @ c:irua:151110 |
Serial |
8748 |
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Author |
de Paepe, J.; Lindeboom, R.E.F.; Vanoppen, M.; Alonso Farinas, B.; Coessens, W.; Abbas, A.; Christiaens, M.; Dotremont, C.; Beckers, H.; Lamaze, B.; Demey, D.; Rabaey, K.; Clauwaert, P.; Verliefde, A.R.D.; Vlaeminck, S.E. |
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Title |
Water treatment unit breadboard : ground test facility for the recycling of urine and shower water for one astronaut |
Type |
P3 Proceeding |
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Year |
2017 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
2 p.
T2 - 5th IWA Benelux Young Water Professional |
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Keywords |
P3 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL) |
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UA library record |
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Call Number |
UA @ admin @ c:irua:151114 |
Serial |
8749 |
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Author |
Leenaerts, O.; Partoens, B.; Peeters, F.M.; Volodin, A.; van Haesendonck, C. |
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Title |
The work function of few-layer graphene |
Type |
A1 Journal article |
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Year |
2017 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
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Volume |
29 |
Issue |
3 |
Pages |
035003 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
A theoretical and experimental study of the work function of few-layer graphene is reported. The influence of the number of layers on the work function is investigated in the presence of a substrate, a molecular dipole layer, and combinations of the two. The work function of few-layer graphene is almost independent of the number of layers with only a difference between monolayer and multilayer graphene of about 60 meV. In the presence of a charge-donating substrate the charge distribution is found to decay exponentially away from the substrate and this is directly reflected in the work function of few-layer graphene. A dipole layer changes the work function only when placed in between the substrate and few-layer graphene through a change of the charge transfer between the two. |
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Wos |
000425250600002 |
Publication Date |
2016-11-16 |
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ISSN |
0953-8984 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Times cited |
61 |
Open Access |
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Call Number |
UA @ admin @ c:irua:164938 |
Serial |
8760 |
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Author |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
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Title |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
Type |
P1 Proceeding |
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Year |
2017 |
Publication |
Semiconductor Process Integration 10 |
Abbreviated Journal |
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Pages |
241-252 |
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Keywords |
P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. |
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Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
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Wos |
000426269800024 |
Publication Date |
2017-10-17 |
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Abbreviated Series Title |
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Series Volume |
80 |
Series Issue |
4 |
Edition |
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ISSN |
978-1-60768-821-1; 978-1-62332-473-5 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:149965 |
Serial |
4966 |
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Author |
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
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Title |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
Type |
P1 Proceeding |
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Year |
2017 |
Publication |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
Abbreviated Journal |
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Volume |
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Pages |
303-311 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity. |
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Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
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Wos |
000426271800028 |
Publication Date |
2017-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
80 |
Series Issue |
1 |
Edition |
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ISSN |
978-1-62332-470-4; 978-1-60768-818-1 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
1 |
Open Access |
Not_Open_Access |
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Notes |
; ; |
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:149966 |
Serial |
4976 |
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