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Author de Backer, A.; Fatermans, J.; den Dekker, A.J.; Van Aert, S.
  Title Atom counting Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 91-144
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
  Abstract In this chapter, a statistical model-based method to count the number of atoms of monotype crystalline nanostructures from high-resolution annular dark-field (ADF) scanning transmission electron microscopy (STEM) images is discussed in detail together with a thorough study on the possibilities and inherent limitations. We show that this method can be applied to nanocrystals of arbitrary shape, size, and atom type. The validity of the atom-counting results is confirmed by means of detailed image simulations and it is shown that the high sensitivity of our method enables us to count atoms with single atom sensitivity.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177529 Serial 6776
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Author de Backer, A.; Fatermans, J.; den Dekker, A.J.; Van Aert, S.
  Title Efficient fitting algorithm Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 73-90
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT)
  Abstract An efficient model-based estimation algorithm is introduced to quantify the atomic column positions and intensities from atomic-resolution (scanning) transmission electron microscopy ((S)TEM) images. This algorithm uses the least squares estimator on image segments containing individual columns fully accounting for overlap between neighboring columns, enabling the analysis of a large field of view. To provide end-users with this well-established quantification method, a user friendly program, StatSTEM, is developed which is freely available under a GNU public license. In this chapter, this efficient algorithm is applied to three different nanostructures for which the analysis of a large field of view is required.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177528 Serial 6778
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Author de Backer, A.; Fatermans, J.; den Dekker, A.J.; Van Aert, S.
  Title General conclusions and future perspectives Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 243-253
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
  Abstract This chapter provides an overview of statistical and quantitative methodologies that have pushed (scanning) transmission electron microscopy ((S)TEM) toward accurate and precise measurements of unknown structure parameters for understanding the relation between the structure of a material and its properties. Hereby, statistical parameter estimation theory has extensively been used which enabled not only measuring atomic column positions, but also quantifying the number of atoms, and detecting atomic columns as accurately and precisely as possible from experimental images. As a general conclusion, it can be stated that advanced statistical techniques are ideal tools to perform quantitative electron microscopy at the atomic scale. In the future, statistical methods will continue to be developed and novel quantification procedures will open up new possibilities for studying material structures at the atomic scale.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177533 Serial 6781
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Author Fatermans, J.; de Backer, A.; den Dekker, A.J.; Van Aert, S.
  Title Image-quality evaluation and model selection with maximum a posteriori probability Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 215-242
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
  Abstract The maximum a posteriori (MAP) probability rule for atom column detection can also be used as a tool to evaluate the relation between scanning transmission electron microscopy (STEM) image quality and atom detectability. In this chapter, a new image-quality measure is proposed that correlates well with atom detectability, namely the integrated contrast-to-noise ratio (ICNR). Furthermore, the working principle of the MAP probability rule is described in detail showing a close relation to the principles of model-selection methods.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177532 Serial 6782
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Author de Backer, A.; Fatermans, J.; den Dekker, A.J.; Van Aert, S.
  Title Introduction Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 1-28
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177525 Serial 6784
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Author de Backer, A.; Fatermans, J.; den Dekker, A.J.; Van Aert, S.
  Title Optimal experiment design for nanoparticle atom counting from ADF STEM images Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 145-175
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
  Abstract In this chapter, the principles of detection theory are used to quantify the probability of error for atom counting from high-resolution scanning transmission electron microscopy (HRSTEM) images. Binary and multiple hypothesis testing have been investigated in order to determine the limits to the precision with which the number of atoms in a projected atomic column can be estimated. The probability of error has been calculated when using STEM images, scattering cross-sections or peak intensities as a criterion to count atoms. Based on this analysis, we conclude that scattering cross-sections perform almost equally well as images and perform better than peak intensities. Furthermore, the optimal STEM detector design can be derived for atom counting using the expression of the probability of error. We show that for very thin objects the low-angle annular dark-field (LAADF) regime is optimal and that for thicker objects the optimal inner detector angle increases.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177530 Serial 6785
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Author de Backer, A.; Fatermans, J.; den Dekker, A.J.; Van Aert, S.
  Title Statistical parameter estimation theory : principles and simulation studies Type H2 Book chapter
  Year 2021 Publication Advances in imaging and electron physics T2 – Advances in imaging and electron physics Abbreviated Journal
  Volume Issue Pages 29-72
  Keywords H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
  Abstract In this chapter, the principles of statistical parameter estimation theory for a quantitative analysis of atomic-resolution electron microscopy images are introduced. Within this framework, electron microscopy images are described by a parametric statistical model. Here, parametric models are introduced for different types of electron microscopy images: reconstructed exit waves, annular dark-field (ADF) scanning transmission electron microscopy (STEM) images, and simultaneously acquired ADF and annular bright-field (ABF) STEM images. Furthermore, the Cramér-Rao lower bound (CRLB) is introduced, i.e. a theoretical lower bound on the variance of any unbiased estimator. This CRLB is used to quantify the precision of the structure parameters of interest, such as the atomic column positions and the integrated atomic column intensities.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-03-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 217 Series Issue Edition
  ISSN ISBN 978-0-12-824607-8; 1076-5670 Additional Links UA library record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes ERC Consolidator project funded by the European Union grant #770887 Picometrics Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:177527 Serial 6788
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Author Van Tendeloo, G.; Amelinckx, S.
  Title Electron-microscopy and the structural studies of superconducting materials and fullerites Type P1 Proceeding
  Year 1994 Publication NATO Advanced Study Institutes series: series E : applied sciences T2 – NATO Advanced Study Institute on Materials and crystallographic Aspects, of HT(c)-Superconductivity, May 17-30, 1993, Erice, Italy Abbreviated Journal
  Volume Issue Pages 521-538
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Kluwer Academic Place of Publication Dordrecht Editor
  Language Wos A1994BA54N00025 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 263 Series Issue Edition
  ISSN 0-7923-2773-X ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:95934 Serial 949
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Author Zhang, Z.; Bourgeois, L.; Zhang, Y.; Rosalie, J.M.; Medhekar, N.
  Title Advanced imaging and simulations of precipitate interfaces in aluminium alloys and their role in phase transformations Type P1 Proceeding
  Year 2020 Publication MATEC web of conferences T2 – 17th International Conference on Aluminium Alloys (ICAA), October 26-29, 2020 Abbreviated Journal
  Volume Issue Pages 09003
  Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract Precipitation is accompanied by the formation and migration of heterophase interfaces. Using the combined approach of advanced imaging and atomistic simulations, we studied the precipitate-matrix interfaces in various aluminium alloy systems, aiming to resolve their detailed atomic structures and illuminate their role in phase transformations.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000652552200053 Publication Date 2020-11-05
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 326 Series Issue Edition
  ISSN 2261-236x; 2274-7214 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:179147 Serial 6851
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Author Lao, M.; Eisterer, M.; Stadel, O.; Meledin, A.; Van Tendeloo, G.
  Title The effect of Y2O3 and YFeO3 additions on the critical current density of YBCO coated conductors Type P1 Proceeding
  Year 2014 Publication 1-4 Abbreviated Journal
  Volume Issue Pages
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract The pinning mechanism of MOCVD-grown YBCO coated conductors with Y2O3 precipitates was investigated by angle-resolved transport measurement of Je in a wide range of temperature and magnetic fields. Aside from the Y2O3 nanoprecipitates, a-axis grains and threading dislocation along the c-axis were found in the YBCO layer. The Y2O3 precipitates are less effective pinning centers at lower temperature. The tapes with precipitates show a higher anisotropy with larger J(c) at H parallel to ab than H parallel to c. This behavior was attributed to the preferred alignment of the nanoprecipitates along the ab-plane.
  Address
  Corporate Author Thesis
  Publisher Iop publishing ltd Place of Publication Bristol Editor
  Language Wos 000350818300068 Publication Date 2014-05-12
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 507 Series Issue Edition
  ISSN 1742-6596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 1 Open Access
  Notes eurotapes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:125444 Serial 3577
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Author Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S.; Leibold, B.; Habermeier, H.U.; Phillipp, F.
  Title Structure and magnetotransport properties of La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition Type P1 Proceeding
  Year 1998 Publication Materials Research Society symposium proceedings T2 – Symposium on Advances in Laser Ablation of Materials at the 1998 MRS, Spring Meeting, April 13-16, 1998, San Francisco, Calif. Abbreviated Journal
  Volume Issue Pages 219-224
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract La1-xCaxMnO3-delta (LCMO) thin films are grown by pulsed laser deposition on a (100) SrTiO3 substrate at temperatures between 530 degrees C and 890 degrees C. The magnetotransport properties show a high negative magnetoresistance and a shift of the maximum of the R(T) curve as function of temperature. The Curie temperature changes with deposition temperature and film quality in the range of 100-220K. The film quality is characterised by X-ray diffraction and transmission electron microscopy (TEM); film and target compositions were verified by atomic emission spectroscopy. The local structure of the film depends on the growth conditions and substrate temperature. TEM reveals a slight distortion of the film leading to a breakdown of the symmetry from orthorhombic to monoclinic. At the highest growth temperatures, a well defined interface is observed within the LCMO film, parallel to the substrate surface; this interface divides the film into two lamellae with a different microstructure. The lamella close to the substrate is perfectly coherent with the substrate, suggesting that it is strained as a result of the lattice parameter mismatch; the upper lamella shows a typical domain structure with unusual translation interfaces characterised by a displacement vector of the type 1/2[010](m) and 1/2[001](m) when referred ten the monoclinic lattice.
  Address
  Corporate Author Thesis
  Publisher Materials research society Place of Publication Warrendale Editor
  Language Wos 000077696000032 Publication Date 2011-04-05
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 526 Series Issue Edition
  ISSN 1946-4274; ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95838 Serial 3283
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Author Colomer, J.-F.; Henrard, L.; Lambin, P.; Van Tendeloo, G.
  Title Electron diffraction of nanotubes bundles : unique helicity and tube-tube atomically coherent packing Type P1 Proceeding
  Year 2002 Publication AIP conference proceedings T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA Abbreviated Journal
  Volume Issue Pages 314-317
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract The atomic structure of single-wall carbon nanotube bundles produced by three different techniques has been characterized by electron diffraction and microscopy. Small bundles produced by Catalytical Chemical Vapor Deposition (CCVD) exhibit only one or two tube chiralities within a single bundle while bundles produced by arc-discharge or laser-ablation exhibit more chiralities. A detailed analysis of the central line of diffraction is also presented. The CCVD nanotubes present more intense spots around 1.7 Angstrom(-1) < k < 2Angstrom(-1) (k is the momentum transfer) compared to what is observed for nanotubes produced by other methods. Amongst the possible explanation for such an anomaly, we put forward that in this range of momentum transfer, the relative tube orientations and translations are important for what concerns the interpretation of the diffraction peaks intensities.
  Address
  Corporate Author Thesis
  Publisher Place of Publication New York Editor
  Language Wos 000178866600070 Publication Date 2003-02-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 633 Series Issue Edition
  ISSN 0-7354-0088-1; 0094-243x ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:104172 Serial 921
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Author Vishwakarma, M.; Thota, N.; Karakulina, O.; Hadermann, J.; Mehta, B.R.
  Title Role of graphene inter layer on the formation of the MoS2 – CZTS interface during growth Type P1 Proceeding
  Year 2018 Publication (icc-2017) Abbreviated Journal
  Volume Issue Pages
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract The growth of MoS2 layer near the Mo/CZTS interface during sulphurization process can have an impact on back contact cell parameters (series resistance and fill factor) depending upon the thickness or quality of MoS2. This study reports the dependence of the thickness of interfacial MoS2 layer on the growth of graphene at the interface between molybdenum back contact and deposited CZTS layer. The graphene layer reduces the accumulation of Zn/ZnS, Sn/SnO2 and formation of pores near the MoS2-CZTS interface. The use of graphene as interface layer can be potentially useful for improving the quality of Mo/MoS2/CZTS interface.
  Address
  Corporate Author Thesis
  Publisher Amer inst physics Place of Publication Melville Editor
  Language Wos 000436313003046 Publication Date 2018-05-09
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 1953 Series Issue Edition
  ISSN 978-0-7354-1648-2; 0094-243x; 0094-243x ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 1 Open Access OpenAccess
  Notes ; The authors acknowledge support provided by DST project. M.V. acknowledges IIT Delhi for MHRD fellowship. Prof. B. R. Mehta acknowledges the support of the Schlumberger chair professorship. ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:153203 Serial 5126
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Author Shestakov, M.V.; Meledina, M.; Turner, S.; Baekelant, W.; Verellen, N.; Chen, X.; Hofkens, J.; Van Tendeloo, G.; Moshchalkov, V.V.
  Title Luminescence of fixed site Ag nanoclusters in a simple oxyfluoride glass host and plasmon absorption of amorphous Ag nanoparticles in a complex oxyfluoride glass host Type P1 Proceeding
  Year 2015 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – 8th International Conference on Photonics, Devices, and System VI, AUG 27-29, 2014, Prague, CZECH REPUBLIC Abbreviated Journal
  Volume Issue Pages Unsp 94501n
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract Ag nanocluster-doped glasses have been prepared by a conventional melt-quenching method. The effect of melt temperature and dwell time on the formation of Ag nanoclusters and Ag nanoparticles in simple host oxyfluoride glasses has been studied. The increase of melt temperature and dwell time results in the dissolution of Ag nanoparticles and substantial red-shift of absorption and photoluminescence spectra of the prepared glasses. The quantum yield of the glasses is similar to 5% and does not depend on melt temperature and dwell time. The prepared glasses may be used as red phosphors or down-conversion layers for solar-cells.
  Address
  Corporate Author Thesis
  Publisher Spie-int soc optical engineering Place of Publication Bellingham Editor
  Language Wos 000349404500057 Publication Date 2015-01-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume (up) 9450 Series Issue Edition
  ISSN 978-1-62841-566-7 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:144783 Serial 4668
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