toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Shafiei, M.; Fazileh, F.; Peeters, F.M.; Milošević, M.V. url  doi
openurl 
  Title Floquet engineering of axion and high-Chern number phases in a topological insulator under illumination Type A1 Journal article
  Year 2024 Publication SciPost Physics Core Abbreviated Journal  
  Volume 7 Issue 7 Pages 024-16  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Quantum anomalous Hall, high-Chern number, and axion phases in topological insulators are characterized by its Chern invariant C (respectively, C = 1, integer C > 1, and C = 0 with half-quantized Hall conductance of opposite signs on top and bottom surfaces). They are of recent interest because of novel fundamental physics and prospective applications, but identifying and controlling these phases has been challenging in practice. Here we show that these states can be created and switched between in thin films of Bi2Se3 by Floquet engineering, using irradiation by circularly polarized light. We present the calculated phase diagrams of encountered topological phases in Bi2Se3, as a function of wavelength and amplitude of light, as well as sample thickness, after properly taking into account the penetration depth of light and the variation of the gap in the surface states. These findings open pathways towards energy-efficient optoelectronics, advanced sensing, quantum information processing and metrology.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001217885300001 Publication Date 2024-05-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ admin @ c:irua:205972 Serial 9151  
Permanent link to this record
 

 
Author Moura, V.N.; Chaves, A.; Peeters, F.M.; Milošević, M.V. url  doi
openurl 
  Title McMillan-Ginzburg-Landau theory of singularities and discommensurations in charge density wave states of transition metal dichalcogenides Type A1 Journal article
  Year 2024 Publication Physical review B Abbreviated Journal  
  Volume 109 Issue 9 Pages 094507-94511  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The McMillan-Ginzburg-Landau (MGL) model for charge density waves (CDW) is employed in a systematic phenomenological study of the different phases that have been probed in recent experiments involving transition metal dichalcogenides. We implemented an efficient imaginary time evolution method to solve the MGL equations, which enabled us to investigate the role of different coupling parameters on the CDW patterns and to perform calculations with different energy functionals that lead to several experimentally observed singularities in the CDW phase profiles. In particular, by choosing the appropriate energy functionals, we were able to obtain phases that go beyond the well-known periodic phase slips (discommensurations), exhibiting also topological defects (i.e., vortex-antivortex pairs), domain walls where the CDW order parameter is suppressed, and even CDW with broken rotational symmetry. Finally, we briefly discuss the effect of these different CDW phases on the profile and critical temperature of the competing superconducting state.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001199651500001 Publication Date 2024-03-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.7 Times cited Open Access  
  Notes Approved Most recent IF: 3.7; 2024 IF: 3.836  
  Call Number UA @ admin @ c:irua:205491 Serial 9158  
Permanent link to this record
 

 
Author Zhou, S.; Zhang, C.; Xu, W.; Zhang, J.; Xiao, Y.; Ding, L.; Wen, H.; Cheng, X.; Hu, C.; Li, H.; Li, X.; Peeters, F.M. pdf  doi
openurl 
  Title Observation of temperature induced phase transitions in TiO superconducting thin film via infrared measurement Type A1 Journal article
  Year 2024 Publication Infrared physics and technology Abbreviated Journal  
  Volume 137 Issue Pages 105160-105169  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In contrast to conventional polycrystalline titanium oxide (TiO), it was found recently that the superconducting transition temperature Tc can be significantly enhanced from about 2 K to 7.4 K in cubic TiO thin films grown epitaxially on alpha-Al2O3 substrates. This kind of TiO film is also expected to have distinctive optoelectronic properties, which are still not very clear up to now. Herein, by using infrared (IR) reflection measurement we investigate the temperature-dependent optoelectronic response of a cubic TiO thin film, in which temperature induced phase transitions are observed. The semiconductor-, metallic- and semiconductor-like electronic phases of this superconducting film are found in the temperature regimes from 10 to 110 K, 110 to 220 K and above 220 K, respectively. The results obtained optically are consistent with those measured by transport experiment. Furthermore, based on an improved reflection model developed here, we extract the complex optical conductivity of the cubic TiO thin film. We are able to approximately determine the characteristic parameters (e.g., effective electron mass, carrier density, scattering time, etc.) for different electronic phases by fitting the optical conductivity with the modified Lorentz formula. These results not only deepen our understanding of the fundamental physics for cubic TiO thin films but also may find applications in optoelectronic devices based on superconductors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001170490200001 Publication Date 2024-01-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 1350-4495 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.3 Times cited Open Access  
  Notes Approved Most recent IF: 3.3; 2024 IF: 1.713  
  Call Number UA @ admin @ c:irua:204853 Serial 9162  
Permanent link to this record
 

 
Author Gogoi, A.; Neyts, E.C.; Peeters, F.M. doi  openurl
  Title Reduction-enhanced water flux through layered graphene oxide (GO) membranes stabilized with H3O+ and OH- ions Type A1 Journal article
  Year 2024 Publication Physical chemistry, chemical physics Abbreviated Journal  
  Volume 26 Issue 13 Pages 10265-10272  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Modelling and Simulation in Chemistry (MOSAIC)  
  Abstract Graphene oxide (GO) is one of the most promising candidates for next generation of atomically thin membranes. Nevertheless, one of the major issues for real world application of GO membranes is their undesirable swelling in an aqueous environment. Recently, we demonstrated that generation of H3O+ and OH- ions (e.g., with an external electric field) in the interlayer gallery could impart aqueous stability to the layered GO membranes (A. Gogoi, ACS Appl. Mater. Interfaces, 2022, 14, 34946). This, however, compromises the water flux through the membrane. In this study, we report on reducing the GO nanosheets as a solution to this issue. With the reduction of the GO nanosheets, the water flux through the layered GO membrane initially increases and then decreases again beyond a certain degree of reduction. Here, two key factors are at play. Firstly, the instability of the H-bond network between water molecules and the GO nanosheets, which increases the water flux. Secondly, the pore size reduction in the interlayer gallery of the membranes, which decreases the water flux. We also observe a significant improvement in the salt rejection of the membranes, due to the dissociation of water molecules in the interlayer gallery. In particular, for the case of 10% water dissociation, the water flux through the membranes can be enhanced without altering its selectivity. This is an encouraging observation as it breaks the traditional tradeoff between water flux and salt rejection of a membrane.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001186465400001 Publication Date 2024-03-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 1463-9076; 1463-9084 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.3 Times cited Open Access  
  Notes Approved Most recent IF: 3.3; 2024 IF: 4.123  
  Call Number UA @ admin @ c:irua:204792 Serial 9168  
Permanent link to this record
 

 
Author Shafiei, M.; Fazileh, F.; Peeters, F.M.; Milošević, M.V. url  doi
openurl 
  Title Tailoring weak and metallic phases in a strong topological insulator by strain and disorder : conductance fluctuations signatures Type A1 Journal article
  Year 2024 Publication Physical review B Abbreviated Journal  
  Volume 109 Issue 4 Pages 045129-7  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Transport measurements are readily used to probe different phases in disordered topological insulators (TIs), where determining topological invariants explicitly is challenging. On that note, universal conductance fluctuations (UCF) theory asserts the conductance G for an ensemble has a Gaussian distribution, and that standard deviation 8G depends solely on the symmetries and dimensions of the system. Using a real-space tight -binding Hamiltonian on a system with Anderson disorder, we explore conductance fluctuations in a thin Bi2Se3 film and demonstrate the agreement of their behavior with UCF hypotheses. We further show that magnetic field applied out-of-plane breaks the time -reversal symmetry and transforms the system's Wigner-Dyson class from root symplectic to unitary, increasing 8G by 2. Finally, we reveal that while Bi2Se3 is a strong TI, weak TI and metallic phases can be stabilized in presence of strain and disorder, and detected by monitoring the conductance fluctuations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001173938400008 Publication Date 2024-01-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.7 Times cited 1 Open Access  
  Notes Approved Most recent IF: 3.7; 2024 IF: 3.836  
  Call Number UA @ admin @ c:irua:204765 Serial 9177  
Permanent link to this record
 

 
Author Xiao, H.; Wen, H.; Xu, W.; Cheng, Y.; Zhang, J.; Cheng, X.; Xiao, Y.; Ding, L.; Li, H.; He, B.; Peeters, F.M. pdf  doi
openurl 
  Title Terahertz magneto-optical properties of Nitrogen-doped diamond Type A1 Journal article
  Year 2024 Publication Infrared physics and technology Abbreviated Journal  
  Volume 138 Issue Pages 105237-105239  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Nitrogen-doped diamond (N-D) is one of the most important carbon-based electronic and optical materials. Here we study the terahertz (THz) magneto-optical (MO) properties of N-D grown by microwave plasma-enhanced chemical vapor deposition. The optical microscope, SEM, XRD, Raman spectrum, FTIR spectroscopy and XPS are used for the characterization of N-D samples. Applying THz time-domain spectroscopy (TDS), in combination with the polarization test and the presence of magnetic field in Faraday geometry, THz MO transmissions through N-D are measured from 0 to 8 T at 80 K. The complex right- and left-handed circular transmission coefficients and MO conductivities for N-D are obtained accordingly. Through fitting the experimental results with theoretical formulas of the dielectric constant and MO conductivities for an electron gas, we are able to determine magneto-optically the key electronic parameters of N-D, such as the static dielectric constant epsilon b, the electron density ne, the electronic relaxation time tau, the electronic localization factor alpha and, particularly, the effective electron mass m* obtained under non-resonant condition. The dependence of these parameters upon magnetic field is examined and analyzed. We find that the MO conductivities of N-D can be described rightly by the MO Drude-Smith formulas developed by us previously. It is shown that N-doping and the presence of the magnetic field can lead towards the larger epsilon b and heavier m* in diamond, while ne/tau/alpha in N-D decreases/increases/decreases with increasing magnetic field. The results obtained from this work are benefit to us in gaining an in-depth understanding of the electronic and optoelectronic properties of N-D.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001200173100001 Publication Date 2024-02-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 1350-4495 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.3 Times cited Open Access  
  Notes Approved Most recent IF: 3.3; 2024 IF: 1.713  
  Call Number UA @ admin @ c:irua:205523 Serial 9178  
Permanent link to this record
 

 
Author Hassani, N.; Movafegh-Ghadirli, A.; Mahdavifar, Z.; Peeters, F.M.; Neek-Amal, M. pdf  doi
openurl 
  Title Two new members of the covalent organic frameworks family : crystalline 2D-oxocarbon and 3D-borocarbon structures Type A1 Journal article
  Year 2024 Publication Computational materials science Abbreviated Journal  
  Volume 241 Issue Pages 1-9  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Oxocarbons, known for over two centuries, have recently revealed a long-awaited facet: two-dimensional crystalline structures. Employing an intelligent global optimization algorithm (IGOA) alongside densityfunctional calculations, we unearthed a quasi -flat oxocarbon (C 6 0 6 ), featuring an oxygen -decorated hole, and a novel 3D-borocarbon. Comparative analyses with recently synthesized isostructures, such as 2D -porous carbon nitride (C 6 N 6 ) and 2D -porous boroxine (B 6 0 6 ), highlight the unique attributes of these compounds. All structures share a common stoichiometry of X 6 Y 6 (which we call COF-66), where X = B, C, and Y = B, N, O (with X not equal Y), exhibiting a 2D -crystalline structure, except for borocarbon C 6 B 6 , which forms a 3D crystal. In our comprehensive study, we conducted a detailed exploration of the electronic structure of X 6 Y 6 compounds, scrutinizing their thermodynamic properties and systematically evaluating phonon stability criteria. With expansive surface areas, diverse pore sizes, biocompatibility, pi-conjugation, and distinctive photoelectric properties, these structures, belonging to the covalent organic framework (COF) family, present enticing prospects for fundamental research and hold potential for biosensing applications.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001215960700001 Publication Date 2024-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 0927-0256 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.3 Times cited Open Access  
  Notes Approved Most recent IF: 3.3; 2024 IF: 2.292  
  Call Number UA @ admin @ c:irua:206005 Serial 9179  
Permanent link to this record
 

 
Author Li, C.; Lyu, Y.-Y.; Yue, W.-C.; Huang, P.; Li, H.; Li, T.; Wang, C.-G.; Yuan, Z.; Dong, Y.; Ma, X.; Tu, X.; Tao, T.; Dong, S.; He, L.; Jia, X.; Sun, G.; Kang, L.; Wang, H.; Peeters, F.M.; Milošević, M.V.; Wu, P.; Wang, Y.-L. pdf  doi
openurl 
  Title Unconventional superconducting diode effects via antisymmetry and antisymmetry breaking Type A1 Journal article
  Year 2024 Publication Nano letters Abbreviated Journal  
  Volume 24 Issue 14 Pages 4108-4116  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Symmetry breaking plays a pivotal role in unlocking intriguing properties and functionalities in material systems. For example, the breaking of spatial and temporal symmetries leads to a fascinating phenomenon: the superconducting diode effect. However, generating and precisely controlling the superconducting diode effect pose significant challenges. Here, we take a novel route with the deliberate manipulation of magnetic charge potentials to realize unconventional superconducting flux-quantum diode effects. We achieve this through suitably tailored nanoengineered arrays of nanobar magnets on top of a superconducting thin film. We demonstrate the vital roles of inversion antisymmetry and its breaking in evoking unconventional superconducting effects, namely a magnetically symmetric diode effect and an odd-parity magnetotransport effect. These effects are nonvolatilely controllable through in situ magnetization switching of the nanobar magnets. Our findings promote the use of antisymmetry (breaking) for initiating unconventional superconducting properties, paving the way for exciting prospects and innovative functionalities in superconducting electronics.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 001193010700001 Publication Date 2024-03-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 1530-6984 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 10.8 Times cited Open Access  
  Notes Approved Most recent IF: 10.8; 2024 IF: 12.712  
  Call Number UA @ admin @ c:irua:205553 Serial 9180  
Permanent link to this record
 

 
Author Tong, J.; Fu, Y.; Domaretskiy, D.; Della Pia, F.; Dagar, P.; Powell, L.; Bahamon, D.; Huang, S.; Xin, B.; Costa Filho, R.N.; Vega, L.F.; Grigorieva, I.V.; Peeters, F.M.; Michaelides, A.; Lozada-Hidalgo, M. pdf  url
doi  openurl
  Title Control of proton transport and hydrogenation in double-gated graphene Type A1 Journal Article
  Year 2024 Publication Nature Abbreviated Journal Nature  
  Volume 630 Issue 8017 Pages 619-624  
  Keywords A1 Journal Article; Condensed Matter Theory (CMT) ;  
  Abstract The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor–insulator transition that has been explored intensively in graphene electronic devices. However, both processes face energy barriersand various strategies have been proposed to accelerate proton transport, for example by introducing vacancies, incorporating catalytic metalsor chemically functionalizing the lattice. But these techniques can compromise other properties, such as ion selectivity or mechanical stability. Here we show that independent control of the electric field,<italic>E</italic>, at around 1 V nm<sup>−1</sup>, and charge-carrier density,<italic>n</italic>, at around 1 × 10<sup>14</sup> cm<sup>−2</sup>, in double-gated graphene allows the decoupling of proton transport from lattice hydrogenation and can thereby accelerate proton transport such that it approaches the limiting electrolyte current for our devices. Proton transport and hydrogenation can be driven selectively with precision and robustness, enabling proton-based logic and memory graphene devices that have on–off ratios spanning orders of magnitude. Our results show that field effects can accelerate and decouple electrochemical processes in double-gated 2D crystals and demonstrate the possibility of mapping such processes as a function of<italic>E</italic>and<italic>n</italic>, which is a new technique for the study of 2D electrode–electrolyte interfaces.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 2024-06-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) Series Issue Edition  
  ISSN 0028-0836 ISBN Additional Links  
  Impact Factor 64.8 Times cited Open Access  
  Notes This work was supported by UKRI (EP/X017745: M.L.-H; EP/X035891: A.M.), the Directed Research Projects Program of the Research and Innovation Center for Graphene and 2D Materials at Khalifa University (RIC2D-D001: M.L.-H., L.F.V. and D.B.), The Royal Society (URF\R1\201515: M.L.-H.) and the European Research Council (101071937: A.M.). Part of this work was supported by the Flemish Science Foundation (FWO-Vl, G099219N). A.M. acknowledges access to the UK national high-performance computing service (ARCHER2). Approved Most recent IF: 64.8; 2024 IF: 40.137  
  Call Number CMT @ cmt @ Serial 9247  
Permanent link to this record
 

 
Author Ivanov, V.A.; Betouras, J.J.; Peeters, F.M. pdf  openurl
  Title MgB2 : superconductivity and pressure effects Type P1 Proceeding
  Year 2003 Publication Abbreviated Journal  
  Volume Issue Pages 35-46  
  Keywords P1 Proceeding; Condensed Matter Theory (CMT)  
  Abstract We present a Ginzburg-Landau theory for a two-band superconductor with emphasis on MgB2. We propose experiments which lead to identification of the possible scenarios: whether both sigma- and pi-bands superconduct or sigma-alone. According to the second scenario a microscopic theory of superconducting MgB2 is proposed based on the strongly interacting or-electrons and non-correlated pi-electrons of boron ions. The kinematic and Coulomb interactions of sigma-electrons provide the superconducting state with an anisotropic gap of s(*)-wave symmetry. The critical temperature T-c has a non-monotonic dependence on the distance r between the centers of gravity of sigma- and pi-bands. The position of MgB2 on a bell-shaped curve T-c (r) is identified in the overdoped region. The derived superconducting density of electronic states is in agreement with available experimental and theoretical data. It is argued that the effects of pressure are crucial to identify the microscopic origin of superconductivity in MgB2. Possibilities for increase of T, are discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Dordrecht Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 106 Series Issue Edition  
  ISSN 1-4020-1372-8 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94869 Serial 2020  
Permanent link to this record
 

 
Author Nguyen, N.T.T.; Peeters, F.M. url  doi
openurl 
  Title Phase-diagram for the magnetic states of the Mn-ion subsystem in a magnetic quantum dot Type P1 Proceeding
  Year 2010 Publication Journal of physics : conference series T2 – Conference on Quantum Dots 2010 (QD2010), APR 26-30, 2010, Nottingham, ENGLAND Abbreviated Journal  
  Volume Issue Pages 012032-12034  
  Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract The interplay between two types of spin-spin exchange interaction (namely of the electron with the Mn-ions and the Mn-ions with each other) that are governed by the positions of the Mn-ions and the magnetic field is studied in the case of a Mn-ion doped CdTe quantum dot. We investigate the formation of different magnetic phases and the existence of frustrated magnetic states due to the dominant contribution of the Mn-Mn energy.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000294907400032 Publication Date 2010-09-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 245 Series Issue Edition  
  ISSN 1742-6596; ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes ; ; Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:113081 Serial 2582  
Permanent link to this record
 

 
Author Nguyen, N.T.T.; Peeters, F.M. url  doi
openurl 
  Title The breakdown of Kohn's theorem in few-electron parabolic quantum dots doped with a single magnetic impurity Mn2+ Type P1 Proceeding
  Year 2010 Publication Journal of physics : conference series T2 – Conference on Quantum Dots 2010 (QD2010), APR 26-30, 2010, Nottingham, ENGLAND Abbreviated Journal  
  Volume Issue Pages 012031-12034  
  Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract The cyclotron resonance (CR) absorption spectrum is calculated for a II-VI parabolic quantum dot (QD) containing few electrons and a single magnetic dopant (Mn(2+)). We find that Kohn's theorem no longer holds for this system and that the CR spectrum depends on the number of electrons inside the QD. The electron-Mn-ion interaction strength can be tuned for example by the magnetic field and by moving the Mn-ion to different positions inside the QD. We demonstrate that due to the presence of the Mn-ion the relative motion of the electrons couple with their center-of-mass motion through the electron-Mn-ion spin-spin exchange term resulting in an electron-electron interaction dependence of the magneto-optical absorption spectrum. At the ferromagnetic-antiferromagnetic transition we observe significant discontinuities in the CR lines.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000294907400031 Publication Date 2010-09-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 245 Series Issue Edition  
  ISSN 1742-6596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes ; ; Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:113080 Serial 3572  
Permanent link to this record
 

 
Author Baelus, B.J.; Kanda, A.; Peeters, F.M.; Ootuka, Y.; Kadowaki openurl 
  Title Different temperature dependence of the phase boundary for multivortex and giant vortex states in mesoscopic superconductors Type P1 Proceeding
  Year 2006 Publication AIP conference proceedings T2 – 24th International Conference on Low Temperature Physics (LT24), AUG 10-17, 2005, Orlando, FL Abbreviated Journal  
  Volume Issue Pages 743-744  
  Keywords P1 Proceeding; Condensed Matter Theory (CMT)  
  Abstract Within the framework of the nonlinear Ginzburg-Landau theory, we calculated the full phase diagram for a superconducting disk with radius R = 4 (T = 0) and we studied the behavior of the penetration and expulsion fields as a function of temperature for multivortex and giant vortex states.  
  Address  
  Corporate Author Thesis  
  Publisher Amer inst physics Place of Publication Melville Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 850 Series Issue Part a-b Edition  
  ISSN 0-7354-0347-3; 0094-243x ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103642 Serial 696  
Permanent link to this record
 

 
Author Kanda, A.; Baelus, B.J.; Peeters, F.M.; Kadowaki, K.; Ootuka, Y. openurl 
  Title Experimental distinction between giant vortex and multivortex states in mesoscopic superconductors Type P1 Proceeding
  Year 2006 Publication AIP conference proceedings T2 – 24th International Conference on Low Temperature Physics (LT24), AUG 10-17, 2005, Orlando, FL Abbreviated Journal  
  Volume Issue Pages 739-742  
  Keywords P1 Proceeding; Condensed Matter Theory (CMT)  
  Abstract We describe an experimental distinction between giant vortex and multivortex states in mesoscopic superconducting disks by using two methods: the multiple-small-tunnel-junction method and the temperature dependence of vortex expulsion fields. The experimental results are in good agreement with the theoretical simulations based on the non-linear Ginzburg-Landau theory.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 850 Series Issue Edition  
  ISSN 0-7354-0347-3; 0094-243x ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103641 Serial 1138  
Permanent link to this record
 

 
Author Pereira, J.M., Jr.; Mlinar, V.; Peeters, F.M.; Vasilopoulos, P. openurl 
  Title Graphene-based quantum wires Type P1 Proceeding
  Year 2007 Publication AIP conference proceedings T2 – 28th International Conference on the Physics of Semiconductors (ICPS-28), JUL 24-28, 2006, Vienna, AUSTRIA Abbreviated Journal  
  Volume Issue Pages 721-722  
  Keywords P1 Proceeding; Condensed Matter Theory (CMT)  
  Abstract We investigate the properties of carriers in graphene-based quantum wires created by potential barriers, by means of analytical and numerical calculations. We obtain expressions for the energy spectrum as a function of barrier height, well width and linear momentum along the wire. The results demonstrate a direction-dependent resonant transmission across the potential well.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 893 Series Issue Edition  
  ISSN 978-0-7354-0397-0; 0094-243x ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103601 Serial 1369  
Permanent link to this record
 

 
Author Avetisyan, A.A.; Partoens, B.; Peeters, F.M. doi  openurl
  Title Electric field tuning of the band gap in four layers of graphene with different stacking order Type P1 Proceeding
  Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal  
  Volume Issue Pages 84140-84148  
  Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000303856600012 Publication Date 2012-01-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 8414 Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:113046 Serial 886  
Permanent link to this record
 

 
Author Djotyan, A.P.; Avetisyan, A.A.; Hao, Y.L.; Peeters, F.M. doi  openurl
  Title Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip Type P1 Proceeding
  Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal  
  Volume Issue Pages 84140-84148  
  Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000303856600020 Publication Date 2012-01-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume (up) 8414 Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the Belgian Science Policy. One of us (AAA) was supported by a fellowship from the Belgian Federal Science Policy Office (Belspo). ; Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:113047 Serial 2987  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: