Abstract: Diffusive properties of a monodisperse system of interacting particles confined to a quasi-one-dimensional channel are studied using molecular dynamics simulations. We calculate numerically the mean-squared displacement (MSD) and investigate the influence of the width of the channel (or the strength of the confinement potential) on diffusion in finite-size channels of different shapes (i.e., straight and circular). The transition from single-file diffusion to the two-dimensional diffusion regime is investigated. This transition [ regarding the calculation of the scaling exponent (alpha) of the MSD <Delta x(2)(t)> proportional to t(alpha)] as a function of the width of the channel is shown to change depending on the channel's confinement profile. In particular, the transition can be either smooth (i.e., for a parabolic confinement potential) or rather sharp (i.e., for a hard-wall potential), as distinct from infinite channels where this transition is abrupt. This result can be explained by qualitatively different distributions of the particle density for the different confinement potentials.

Abstract: Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.

Abstract: Superelastic deformation of thin NiTi wires containing various nanograined microstructures was investigated by tensile cyclic loading with in situ evaluation of electric resistivity. Defects created by the superelastic cycling in these wires were analyzed by transmission electron microscopy. The role of dislocation slip in superelastic deformation is discussed. NiTi wires having finest microstructures (grain diameter <100 nm) are highly resistant against dislocation slip, while those with fully recrystallized microstructure and grain size exceeding 200 nm are prone to dislocation slip. The density of the observed dislocation defects increases significantly with increasing grain size. The upper plateau stress of the superelastic stressstrain curves is largely grain size independent from 10 up to 1000 nm. It is hence claimed that the HallPetch relationship fails for the stress-induced martensitic transformation in this grain size range. It is proposed that dislocation slip taking place during superelastic cycling is responsible for the accumulated irreversible strains, cyclic instability and degradation of functional properties. No residual martensite phase was found in the microstructures of superelastically cycled wires by TEM and results of the in situ electric resistance measurements during straining also indirectly suggest that none or very little martensite phase remains in the studied cycled superelastic wires after unloading. The accumulation of dislocation defects, however, does not prevent the superelasticity. It only affects the shape of the stressstrain response, makes it unstable upon cycling and changes the deformation mode from localized to homogeneous. The activity of dislocation slip during superelastic deformation of NiTi increases with increasing test temperature and ultimately destroys the superelasticity as the plateau stress approaches the yield stress for slip. Deformation twins in the austenite phase ({1 1 4} compound twins) were frequently found in cycled wires having largest grain size. It is proposed that they formed in the highly deformed B19′ martensite phase during forward loading and are retained in austenite after unloading. Such twinning would represent an additional deformation mechanism of NiTi yielding residual irrecoverable strains.

Abstract: Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling.

Abstract: Transmission electron microscopy and mechanical testing were employed to investigate the evolution of microstructure and functional superelastic properties of 0.1mm diameter as-drawn Ni-Ti wires subjected to a non-conventional heat treatment by controlled electric pulse current. This method enables a finer control of the recovery and recrystallisation processes taking place during the heat treatment and accordingly a better control on the final microstructure. The best functional properties were obtained for heat-treated Ni-Ti wires having a nanograined microstructure (20-50 nm) partially recovered through polygonization and partially recrystallized. Such microstructure is highly resistant against dislocation slip upon cycling, while microstructures annealed for longer time and showing mostly recrystallized grains were prone to dislocation slip, particularly as the grain size exceeds 100 nm. The density of dislocation defects increased significantly with increasing grain size of the microstructure. The activity of three <100>/{011} slip systems was identified in the largest grains of 500-1200 nm. An additional mode of plastic deformation, {114} compound austenite twinning, was observed in the largest grains of fully recrystallized microstructures. It is proposed that dislocation slip (and possibly deformation twinning) occurring in superelastic cycling is coupled with the stress-induced martensitic transformation.

Abstract: Low-temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point (CNP). Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic magnetoconductance quantum interference features which develop rapidly as a function of density. At slightly higher fields (>0.5 T), close to the CNP, additional fluctuations track the quantum Hall (QH) sequence expected for monolayer graphene. These additional features are attributed to effects of locally charging individual QH localized states. These effects reveal a precursor to the quantum Hall effect since, unlike previous transport observations of QH dot charging effects, they occur in the absence of quantum Hall plateaus or Shubnikov-de Haas oscillations. From our transport data we are able to extract parameters that characterize the inhomogeneities in our device.

Abstract: Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at 720 °C and oxygen pressure pO2=125 Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO2 as a secondary phase could be avoided for pO28 Pa. However, transmission electron microscopy shows the presence of CeO2 nanoclusters even in those films which appear to be single phase in XRD. With O2 annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La0.7Ce0.3MnO3 with mixed Mn3+/Mn2+ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn3+ and Mn4+, and only a small amount of Mn2+ ions can be observed by XAS. Mn2+ and Ce4+ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.