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“Electronic structure and band gap of zinc spinel oxides beyond LDA : ZnAl2O4, ZnGa2O4 and ZnIn2O4”. Dixit H, Tandon N, Cottenier S, Saniz R, Lamoen D, Partoens B, van Speybroeck V, Waroquier M, New journal of physics 13, 063002 (2011). http://doi.org/10.1088/1367-2630/13/6/063002
Abstract: We examine the electronic structure of the family of ternary zinc spinel oxides ZnX2O4 (X=Al, Ga and In). The band gap of ZnAl2O4 calculated using density functional theory (DFT) is 4.25 eV and is overestimated compared with the experimental value of 3.83.9 eV. The DFT band gap of ZnGa2O4 is 2.82 eV and is underestimated compared with the experimental value of 4.45.0 eV. Since DFT typically underestimates the band gap in the oxide system, the experimental measurements for ZnAl2O4 probably require a correction. We use two first-principles techniques capable of describing accurately the excited states of semiconductors, namely the GW approximation and the modified BeckeJohnson (MBJ) potential approximation, to calculate the band gap of ZnX2O4. The GW and MBJ band gaps are in good agreement with each other. In the case of ZnAl2O4, the predicted band gap values are >6 eV, i.e. ~2 eV larger than the only reported experimental value. We expect future experimental work to confirm our results. Our calculations of the electron effective masses and the second band gap indicate that these compounds are very good candidates to act as transparent conducting host materials.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.786
Times cited: 98
DOI: 10.1088/1367-2630/13/6/063002
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“Interfacial spin glass state and exchange bias in manganite bilayers with competing magnetic orders”. Ding JF, Lebedev OI, Turner S, Tian YF, Hu WJ, Seo JW, Panagopoulos C, Prellier W, Van Tendeloo G, Wu T, Physical review : B : condensed matter and materials physics 87, 054428 (2013). http://doi.org/10.1103/PhysRevB.87.054428
Abstract: The magnetic properties of manganite bilayers composed of G-type antiferromagnetic (AFM) SrMnO3 and double-exchange ferromagnetic (FM) La0.7Sr0.3MnO3 are studied. A spin-glass state is observed as a result of competing magnetic orders and spin frustration at the La0.7Sr0.3MnO3/SrMnO3 interface. The dependence of the irreversible temperature on the cooling magnetic field follows the Almeida-Thouless line. Although an ideal G-type AFM SrMnO3 is featured with a compensated spin configuration, the bilayers exhibit exchange bias below the spin glass freezing temperature, which is much lower than the Néel temperature of SMO, indicating that the exchange bias is strongly correlated with the spin glass state. The results indicate that the spin frustration that originates from the competition between the AFM super-exchange and the FM double-exchange interactions can induce a strong magnetic anisotropy at the La0.7Sr0.3MnO3/SrMnO3 interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 98
DOI: 10.1103/PhysRevB.87.054428
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“Modeling of metastable argon atoms in a direct current glow discharge”. Bogaerts A, Gijbels R, Physical review : A : atomic, molecular and optical physics 52, 3743 (1995). http://doi.org/10.1103/PhysRevA.52.3743
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.808
Times cited: 98
DOI: 10.1103/PhysRevA.52.3743
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“Nanodiamond photoemitters based on strong narrow-band luminescence from silicon-vacancy defects”. Vlasov II, Barnard AS, Ralchenko VG, Lebedev OI, Kanzyuba MV, Saveliev AV, Konov VI, Goovaerts E, Advanced materials 21, 808 (2009). http://doi.org/10.1002/adma.200802160
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Nanostructured and organic optical and electronic materials (NANOrOPT)
Impact Factor: 19.791
Times cited: 98
DOI: 10.1002/adma.200802160
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