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Author |
Ignatova, V.A.; Conard, T.; Möller, W.; Vandervorst, W.; Gijbels, R. |
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Title |
Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Applied surface science |
Abbreviated Journal |
Appl Surf Sci |
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Volume |
231/232 |
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Pages |
603-608 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
This study is dedicated to a better understanding of the processes occurring under ion bombardment of ultra-thin ZrO2/SiO2/Si gate dielectric stacks. Complex-shaped depth profiles were obtained by using TOF-SIMS with dual beam (500 eV for sputtering and 10 keV for analysis) Ar+ ions. The SIMS intensities of all the elements depend critically on the amount of oxygen at any moment of the sputtering process. Increased intensity is observed at the surface and at the ZrO2/SiO2 interface. A long tail of the Zr signal is present in the Si substrate, even after the second (SiO2/Si) interface, and a double bump structure in the Zr-90 and ZrO dimer is observed, which is more pronounced with increasing thickness of the interfacial SiO2 layer. Computer simulations using the dynamic Monte Carlo code (TRIDYN) are performed in order to distinguish the ion bombardment-induced effects from changes in the ionization degree. The original code is extended with simple models for the ionization mechanism and for the molecular yield during sputtering. Oxygen preferential sputtering at the surface and ballistic transport of Zr towards and through the interface are clearly demonstrated, but there is also evidence that due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. (C) 2004 Elsevier B.V. All rights reserved. |
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Place of Publication |
Amsterdam |
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Wos |
000222427700118 |
Publication Date |
2004-05-30 |
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ISSN |
0169-4332; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.387 |
Times cited |
4 |
Open Access |
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Approved |
Most recent IF: 3.387; 2004 IF: 1.497 |
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Call Number |
UA @ lucian @ c:irua:51976 |
Serial |
651 |
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Author |
Ignatova, V.A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Applied physics A : materials science & processing |
Abbreviated Journal |
Appl Phys A-Mater |
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Volume |
81 |
Issue |
1 |
Pages |
71-77 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Place of Publication |
Heidelberg |
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Wos |
000228794000013 |
Publication Date |
2005-04-11 |
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ISSN |
0947-8396;1432-0630; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.455 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.455; 2005 IF: 1.990 |
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Call Number |
UA @ lucian @ c:irua:60085 |
Serial |
1711 |
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Permanent link to this record |